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NXP Semiconductors A2T21H140-24SR3
- Part No.:
- A2T21H140-24SR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- OM780-4
- Datasheet:
-
A2T21H140-24SR3.pdf
- Description:
- RF MOSFET LDMOS 28V OM780-4
- Quantity:
- Payment:
- Shipping:
Inventory:8,911
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Product details
Overview
A2T21H140-24SR3 from NXP Semiconductors is a 36 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating at 2110–2170 MHz. It delivers 17.5 dB typical power gain, 53.3% drain efficiency at 2140 MHz, –31.4 dBc ACPR under W-CDMA signal conditions, and supports digital predistortion with a –6.0 Vdc to +10 Vdc gate-source voltage range.
For engineers reviewing the A2T21H140-24SR3 datasheet, A2T21H140-24SR3 pinout, A2T21H140-24SR3 application, or A2T21H140-24SR3 equivalent, this device is selected for high-efficiency, high-linearity macrocell and remote radio head (RRH) power amplifier stages requiring stable thermal performance up to +150°C case temperature and robust load mismatch tolerance.
Technical Context
The A2T21H140-24SR3 integrates two laterally diffused MOSFETs-Carrier (Side A) and Peaking (Side B)-in a single NI-780S-4L2L package, enabling integrated asymmetrical Doherty operation without external combining networks. Its dual-gate architecture allows independent biasing: VGSA(Q) = 1.4–2.2 Vdc for Carrier and VGSB = 0.5 Vdc fixed for Peaking.
Thermal resistance is specified at RθJC = 0.45 °C/W under 36 W avg. W-CDMA conditions, and the device sustains operation at junction temperatures up to +225°C. ESD protection meets HBM Class 2 and CDM Class C2 per JESD22 standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2110–2170 MHz - Fully characterized and optimized for Band I (UMTS/ LTE) cellular infrastructure. |
| Output Power (Avg.) | 36 W - Average RF output power under single-carrier W-CDMA with 9.9 dB PAR at 0.01% CCDF probability. |
| Power Gain | 17.5 dB typ. at 2140 MHz - Enables reduced driver stage complexity in multi-stage PA designs. |
| Drain Efficiency | 53.3% typ. at 2140 MHz - Reduces heat dissipation and DC power consumption in energy-sensitive base stations. |
| ACPR | –31.4 dBc @ ±5 MHz offset - Meets stringent spectral mask requirements for 3.84 MHz W-CDMA channels. |
| Thermal Resistance | 0.45 °C/W - Supports compact heatsink design with predictable junction-to-case thermal path. |
| VGS Range | –6.0 to +10 Vdc - Enables deep Class C peaking operation and enhanced linearity control via gate voltage tuning. |
Pinout & Package
Package: NI-780S-4L2L - 6-pin over-molded plastic package with exposed thermal pad, optimized for high-power RF thermal management and surface-mount assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (VBWB) | Peaking side source / thermal pad connection | Internally tied to case; must be soldered to PCB ground plane for thermal conduction and RF return path. |
| 2 (RFoutB/VDSB) | Peaking side drain output | RF output node for peaking amplifier; requires impedance matching network to 50 Ω system. |
| 3 (RFinA/VGSA) | Carrier side gate input | Bias and RF input for carrier amplifier; DC-blocking capacitor required in series. |
| 4 (RFinB/VGSB) | Peaking side gate input | Fixed-bias gate input for peaking amplifier; typically biased at 0.5 Vdc for optimal Doherty operation. |
| 5 (RFoutA/VDSA) | Carrier side drain output | Primary RF output node; connects to internal combiner and external output matching network. |
| 6 (VBWA) | Carrier side source / thermal pad connection | Internally tied to case; shares thermal pad with Pin 1; must be grounded to PCB for thermal and electrical stability. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated asymmetrical Doherty architecture | Eliminates need for external power combiner and reduces board space, insertion loss, and phase-matching sensitivity. |
| Negative VGS capability down to –6.0 Vdc | Enables precise Class C peaking bias control and improves AM-PM distortion suppression in DPD systems. |
| Internally matched I/O | Reduces external matching component count; input and output are pre-tuned for 50 Ω system in NXP test fixture. |
| High junction temperature rating | Rated for TJ up to +225°C - supports reliable operation in thermally constrained RRH enclosures. |
| Robust load mismatch tolerance | Withstands VSWR 10:1 at 32 Vdc and 200 W CW with no degradation - critical for antenna coupling variations in live sites. |
Applications
| Macrocell Base Station PA | Remote Radio Head (RRH) |
|---|---|
|
Use Scenario: High-power final stage in outdoor macrocell BTS covering urban/suburban coverage with 2×20 MHz LTE carriers. IC Role / Device Role / Timing Role: Asymmetrical Doherty power transistor delivering 36 W avg. output across 2110–2170 MHz with DPD correction. Use Value: Achieves >53% drain efficiency and <–30 dBc ACPR while maintaining thermal stability at +150°C case temperature. |
Use Scenario: Compact, air-cooled PA module mounted directly on tower-mounted antennas for low-latency fronthaul. IC Role / Device Role / Timing Role: Dual-path RF power transistor enabling integrated carrier/peaking amplification without external combiners. Use Value: Reduces bill-of-materials and layout area by 30% versus discrete Doherty implementations; supports 0.45 °C/W thermal path. |
| Multi-Standard BTS (UMTS/LTE) | Digital Predistortion (DPD) System |
|
Use Scenario: Reconfigurable PA supporting both W-CDMA and LTE FDD modes in software-defined radio base stations. IC Role / Device Role / Timing Role: High-linearity RF power transistor with consistent Gps flatness (0.18 dB over 60 MHz) and low AM/PM (–23°). Use Value: Maintains adjacent channel leakage ratio below –30 dBc across modulation bandwidths up to 20 MHz without retuning. |
Use Scenario: Front-end PA in closed-loop DPD transmitters where real-time error correction requires wide dynamic range and low memory effects. IC Role / Device Role / Timing Role: LDMOS transistor with calibrated gate threshold (0.8–1.6 Vdc) and stable VGS(th) drift (<0.008 dB/°C gain variation). Use Value: Enables accurate DPD model convergence with minimal temperature-induced coefficient drift during field operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| A2T21H140-24S | Same die and electrical specs; differs only in packaging - R3 suffix denotes 250-unit tape-and-reel vs. bare part. | No functional difference; identical thermal, RF, and bias behavior in circuit. | Select A2T21H140-24SR3 for automated SMT production; choose A2T21H140-24S for prototyping or low-volume hand assembly. |
| MRF6VP2450HR6 | 450 W P3dB GaN HEMT; higher power, wider bandwidth (1805–2200 MHz), but requires external Doherty combiner and more complex bias sequencing. | Targets high-capacity massive MIMO active antenna units, not macrocell Doherty modules. | Choose MRF6VP2450HR6 only when scaling beyond 100 W avg. output or extending to Band III; A2T21H140-24SR3 remains optimal for 36 W integrated Doherty. |
Compared with A2T21H140-24S, the A2T21H140-24SR3 offers identical RF performance with factory-optimized tape-and-reel handling for production lines; versus MRF6VP2450HR6, it provides lower system-level complexity and proven thermal reliability in legacy macrocell deployments without GaN-specific gate drive or thermal interface requirements.
Availability
A2T21H140-24SR3 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, multi-standard BTS, and digital predistortion amplifier designs requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom infrastructure programs.
Supply support for A2T21H140-24SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies since its Freescale acquisition.
The A2T21H140-24SR3 belongs to NXP's AIRFAST® RF Power portfolio, engineered specifically for energy-efficient, thermally robust, and digitally linearizable cellular infrastructure amplifiers operating in licensed sub-3 GHz bands.
FAQ
What is the maximum continuous drain voltage rating for the A2T21H140-24SR3?
The A2T21H140-24SR3 has a maximum drain-source voltage rating (VDSS) of +65 Vdc and –0.5 Vdc. This asymmetric rating reflects its enhancement-mode LDMOS structure and ensures safe operation under transient voltage spikes common in RF PA switching environments. Exceeding +65 Vdc risks permanent breakdown of the drain-channel junction.
Does the A2T21H140-24SR3 require external input/output matching networks?
Yes, the A2T21H140-24SR3 is internally matched for use in NXP's reference Doherty test fixture, but actual system integration requires custom input and output matching networks tailored to the target frequency band, PA topology, and load VSWR requirements. The device's Zin and Zload values vary significantly between carrier and peaking sides, as documented in Tables 7–10.
What is the recommended gate bias sequence for reliable A2T21H140-24SR3 operation?
Apply VGSB = 0.5 Vdc to the peaking side first, then ramp VGSA to its quiescent value (1.4–2.2 Vdc) while monitoring IDQA to stabilize at 350 mA. Finally, apply VDD = 28 Vdc. Reversing this sequence risks uncontrolled peaking conduction and thermal runaway. The A2T21H140-24SR3 datasheet specifies this sequence in Section "Functional Tests".
How does the A2T21H140-24SR3 perform under load mismatch conditions?
The A2T21H140-24SR3 is qualified to withstand VSWR 10:1 at 32 Vdc and 200 W CW output power with 3 dB input overdrive - a condition exceeding typical field antenna mismatches. No device degradation was observed in NXP testing, confirming robust survivability in real-world base station deployments where cable faults or antenna detuning may occur.
Is the A2T21H140-24SR3 compatible with lead-free reflow soldering processes?
Yes, the A2T21H140-24SR3 is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature tolerance up to 260°C. NXP Application Note AN1907 details the recommended 8-step reflow profile, including controlled ramp rates and dwell time above liquidus, to prevent delamination or thermal stress damage to the NI-780S-4L2L package.
A2T21H140-24SR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- OM780-4
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 2.11GHz ~ 2.17GHz
- Gain:
- 17.4dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 350 mA
- Power - Output:
- 169W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- OM780-4
A2T21H140-24SR3 FAQ
1.How can I place an order for A2T21H140-24SR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for A2T21H140-24SR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A2T21H140-24SR3 reliable?
The price and inventory of A2T21H140-24SR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A2T21H140-24SR3 is usually 5 days.
3.What payment methods are accepted for A2T21H140-24SR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A2T21H140-24SR3 transactions.
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4.How is shipping managed for A2T21H140-24SR3?
A2T21H140-24SR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A2T21H140-24SR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A2T21H140-24SR3?
For technical support, including A2T21H140-24SR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A2T21H140-24SR3 requirements.
6.How does Aetrix verify that A2T21H140-24SR3 is sourced from the original manufacturer or authorized distributors?
All A2T21H140-24SR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A2T21H140-24SR3 meets industry standards.
7.What is the process for return or replacement of A2T21H140-24SR3?
All A2T21H140-24SR3 units undergo pre-shipment inspection (PSI). If there is an issue with A2T21H140-24SR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A2T21H140-24SR3 part is unused and in its original packaging.
Return procedure for A2T21H140-24SR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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