NXP Semiconductors A2T21H141W24SR3

Overview

A2T21H141W24SR3 from NXP Semiconductors is a 36 W asymmetrical Doherty RF power LDMOS transistor in NI-780S-4L2L package, operating at 2110–2200 MHz with 17.3 dB typical power gain and 50.6% drain efficiency at 2140 MHz under W-CDMA conditions (V_DD = 28 V, P_out = 36 W Avg.). It serves as the dual-path active device in cellular base station final-stage power amplifiers.

For engineers reviewing the A2T21H141W24SR3 datasheet, A2T21H141W24SR3 pinout, A2T21H141W24SR3 application, or A2T21H141W24SR3 equivalent, key selection criteria include its 2110–2200 MHz bandwidth, Doherty architecture support, 0.44 °C/W thermal resistance, 10:1 VSWR ruggedness, and internal input/output matching for rapid PA design integration.

Technical Context

This device implements an integrated asymmetrical Doherty topology with separate carrier (Pin 1/V_GSA, Pin 3/V_DSA) and peaking (Pin 5/V_GSB, Pin 6/V_DSB) paths, enabling high-efficiency operation across 90 MHz instantaneous bandwidth. Its gate threshold voltage is 0.8–1.6 V for both sides, and it supports digital predistortion via wide PAR handling (7.3 dB typical at 0.01% CCDF probability).

The transistor features monolithic integration of both paths in a single NI-780S-4L2L air-cavity package with DC-coupled pins 4 and 5, and requires tied V_DDA/V_DDA supply. It withstands 10:1 load mismatch at 32 Vdc and 170 W CW without degradation, confirming robust broadband RF operation.

Key Specifications

Pinout & Package

The A2T21H141W24SR3 is housed in the NI-780S-4L2L air-cavity ceramic/metal package (13.3 mm × 11.2 mm × 4.0 mm), optimized for high-frequency RF power dissipation and impedance stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with A2T21H141W24SR3, the R2 variant offers identical RF performance in smaller reels for validation, while MRF6VP2300HR5 delivers higher peak power at the cost of increased system-level design effort and no integrated Doherty architecture.

Availability

A2T21H141W24SR3 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, massive MIMO active antenna systems, and 5G NR FR1 infrastructure requiring stable component supply and qualified RF power transistor sourcing.

Supply support for A2T21H141W24SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies.

The A2T21H141W24SR3 belongs to NXP's AIRFAST RF Power LDMOS family, engineered specifically for energy-efficient, digitally predistorted cellular infrastructure amplifiers operating in licensed sub-6 GHz bands.

FAQ

What is the maximum continuous drain voltage rating for the A2T21H141W24SR3?

The A2T21H141W24SR3 has a maximum drain-source voltage rating (V_DSS) of +65 Vdc and –0.5 Vdc, as specified in Table 1 of the official NXP datasheet Rev. 0 (June 2018). This rating applies under all operating conditions and must not be exceeded to ensure long-term reliability of the A2T21H141W24SR3.

Does the A2T21H141W24SR3 require external input/output matching networks?

No, the A2T21H141W24SR3 is internally matched on both input and output to 50 Ω, as confirmed in Note 2 of Table 5 and Figure 2 layout documentation. This eliminates the need for external matching components in standard 50 Ω test fixtures and simplifies integration into production PA designs using the A2T21H141W24SR3.

What is the thermal resistance junction-to-case for the A2T21H141W24SR3 under W-CDMA conditions?

The thermal resistance junction-to-case (R_θJC) for the A2T21H141W24SR3 is 0.44 °C/W, measured at 76 °C case temperature, 36 W average output, 28 Vdc supply, I_DQA = 400 mA, V_GSB = 0.65 Vdc, and 2140 MHz frequency, per Table 2 of the NXP datasheet. This value is specific to the A2T21H141W24SR3 in its NI-780S-4L2L package.

Can the A2T21H141W24SR3 operate in symmetrical Doherty configuration?

No - the A2T21H141W24SR3 is explicitly designed and characterized for asymmetrical Doherty operation, as stated in the product description and validated in all functional test data (Tables 4–5). Its carrier and peaking paths have different bias points (V_GSA(Q) ≈ 1.8 V, V_GSB = 0.65 V), making symmetrical implementation incompatible with the A2T21H141W24SR3's internal architecture.

What ESD protection level does the A2T21H141W24SR3 provide?

The A2T21H141W24SR3 meets Human Body Model (HBM) Class 2 (per JS-001-2017) and Charge Device Model (CDM) Class C3 (per JS-002-2014), as documented in Table 3 of the NXP datasheet. These ratings apply to the A2T21H141W24SR3 in its NI-780S-4L2L package and reflect standardized ESD robustness for handling and assembly.