NXP Semiconductors A2T21H360-23NR6

Overview

A2T21H360-23NR6 from NXP Semiconductors (formerly Freescale) is an asymmetrical Doherty RF power LDMOS transistor designed for cellular base station final-stage amplification in the 2110–2200 MHz band. It delivers 63 W average output power at 28 Vdc, achieves 49.7% drain efficiency and 16.8 dB power gain at 2140 MHz under W-CDMA signal conditions, and supports digital predistortion for linearized operation in LTE infrastructure.

For engineers reviewing the A2T21H360-23NR6 datasheet, A2T21H360-23NR6 pinout, A2T21H360-23NR6 application, or A2T21H360-23NR6 equivalent, this device requires attention to its dual-gate architecture (carrier/peaking), exposed-source thermal interface, 6-pin plastic over-molded package (OM-1230-4L2S), and asymmetric Doherty biasing requirements - all critical for PA subsystem design, thermal management, and load-pull matching in macrocell BTS.

Technical Context

This device implements a monolithic dual-LDMOS structure with separate carrier and peaking transistors in a single OM-1230-4L2S package. The carrier side operates at IDQA = 500 mA with VGSA(Q) = 1.4–2.2 Vdc, while the peaking side activates at VGSB = 0.5–0.7 Vdc, enabling high-efficiency Doherty operation across 2110–2200 MHz.

It features internally matched input and output impedances, a 0.19 °C/W junction-to-case thermal resistance at 63 W avg., and ESD protection rated Class 2 HBM. Its VBWA/VBWB pins provide independent bias control for carrier and peaking paths, supporting precise Doherty tuning and digital predistortion integration.

Key Specifications

Pinout & Package

Package: OM-1230-4L2S - 6-pin plastic over-molded package with exposed copper backside serving as common source terminal for both transistors.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with A2T21H360-23NR6, AFT21H360-24N offers identical RF performance in alternate packaging, while AFM36003D trades efficiency for higher peak power - making the former a drop-in logistics alternative and the latter a functional upgrade for PAPR-intensive deployments.

Availability

A2T21H360-23NR6 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, and W-CDMA infrastructure transmitters requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom OEMs.

Supply support for A2T21H360-23NR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale in 2015 and continues its RF Power portfolio under the Airfast brand, focusing on high-efficiency GaN and LDMOS solutions for wireless infrastructure.

The A2T21H360-23NR6 belongs to the Airfast RF Power LDMOS family, engineered specifically for energy-efficient, digitally predistorted Doherty PAs in 4G/LTE macrocell and small-cell base stations.

FAQ

What is the maximum continuous drain voltage rating for the A2T21H360-23NR6?

The A2T21H360-23NR6 has a maximum drain-source voltage rating (V_DSS) of +65 Vdc. This rating applies under static conditions and defines the absolute upper limit for safe DC bias application; operation above 32 Vdc is not recommended for continuous use per the Absolute Maximum Ratings table.

Does the A2T21H360-23NR6 require external input/output matching networks?

No - the A2T21H360-23NR6 is internally matched on both input and output for 50 Ω systems across 2110–2200 MHz. However, external harmonic filtering and bias decoupling remain necessary, and production test fixtures (e.g., Figure 2) confirm optimal performance with specific capacitor/resistor values listed in Table 7.

How is thermal management implemented for the A2T21H360-23NR6 in PCB layout?

The exposed backside of the OM-1230-4L2S package serves as the common source terminal and must be soldered directly to a large copper heatsink plane using multiple thermal vias. Per AN1907, reflow profile and solder paste volume are critical - insufficient solder coverage increases R_θJC beyond the specified 0.19 °C/W, risking thermal runaway at full 63 W avg. output.

Can the A2T21H360-23NR6 operate in Class AB mode, or is it strictly for Doherty?

The A2T21H360-23NR6 supports both configurations: as a single-ended Class AB amplifier (using only carrier side, Pin 1/2/3) or as an asymmetrical Doherty (full 6-pin operation). However, its gate threshold symmetry, peaking-side V_GS(th), and load-pull data are optimized for Doherty - Class AB use yields lower efficiency (~38%) and is not characterized in the datasheet.

What is the significance of the "R6" suffix in A2T21H360-23NR6?

The "R6" suffix indicates tape-and-reel packaging: 150 units per reel, 56 mm tape width, and 13-inch reel diameter. This differs from the "R4" variant (AFT21H360-24N), which uses 500-unit reels. Electrical, thermal, and mechanical specifications are identical between R6 and R4 versions - only logistics packaging varies.