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NXP Semiconductors A2T21H450W19SR6
- Part No.:
- A2T21H450W19SR6
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-1230S-4S4S
- Datasheet:
-
A2T21H450W19SR6.pdf
- Description:
- RF MOSFET LDMOS 30V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:277
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Product details
Overview
A2T21H450W19SR6 from NXP Semiconductors (formerly Freescale) is an asymmetrical Doherty RF power LDMOS transistor designed for carrier and peaking path operation in cellular base station power amplifiers. It delivers 89 W average output power at 2110–2200 MHz, with 15.7 dB typical power gain, 46.2% drain efficiency, and –33.9 dBc adjacent channel power ratio under W-CDMA single-carrier conditions (30 Vdc, 800 mA IDQA, 0.7 Vdc VGSB). It targets macrocell BTS final-stage amplification in 3G/4G LTE infrastructure.
For engineers reviewing the A2T21H450W19SR6 datasheet, A2T21H450W19SR6 pinout, A2T21H450W19SR6 application, or A2T21H450W19SR6 equivalent, key selection criteria include its dual-path Doherty architecture, 2110–2200 MHz bandwidth, thermal resistance of 0.26 °C/W, NI-1230S-4S4S package compatibility, and support for digital predistortion linearization in wideband cellular systems.
Technical Context
The A2T21H450W19SR6 integrates two laterally diffused MOSFETs-Carrier (Side A) and Peaking (Side B)-in a monolithic Ni-1230S-4S4S air-cavity package. Side A operates in Class AB with VGSA(Q) = 2.5 Vdc (typ), while Side B is biased in Class C with VGSB = 0.7 Vdc and lower threshold voltage (VGS(th) = 1.3 Vdc typ).
It features internal input/output matching optimized for 50 Ω systems across 2110–2200 MHz, supports 10:1 load mismatch tolerance at 32 Vdc, and exhibits 0.15 dB gain flatness over 70 MHz bandwidth at 89 W avg. Its VBW resonance at 150 MHz enables third-order IMD suppression critical for DPD-enabled wideband operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2110–2200 MHz - Covers full Band I (UMTS/LTE) uplink and downlink spectrum allocation. |
| Avg. Output Power | 89 W - Sustained W-CDMA average power at PAR = 9.9 dB, enabling high-efficiency macrocell PA design. |
| Power Gain | 15.7 dB (typ) - Enables compact multi-stage PA architectures with reduced driver stage complexity. |
| Drain Efficiency | 46.2% (typ at 2145 MHz) - Reduces thermal load and DC power consumption in energy-sensitive base stations. |
| ACPR | –33.9 dBc @ ±5 MHz offset - Meets stringent spectral mask requirements for 3GPP UMTS and LTE deployments. |
| Thermal Resistance | 0.26 °C/W - Supports high-power dissipation with manageable case temperature rise under continuous operation. |
| VSWR Tolerance | 10:1 - Ensures robust operation under antenna mismatch conditions without device degradation. |
Pinout & Package
The A2T21H450W19SR6 is housed in the NI-1230S-4S4S thermally enhanced air-cavity package with 8 leads, optimized for RF power amplifier modules requiring low thermal resistance and high reliability in base station environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 4 | VBWAG / VBWBG | Broadband bypass terminals for gate bias decoupling; must be DC-coupled to ground via external capacitors. |
| 2 | RFinA / VGSA | Carrier path RF input and gate bias node; internally matched to ~50 Ω across 2110–2200 MHz. |
| 3 | RFinB / VGSB | Peaking path RF input and gate bias node; configured for Class C operation at 0.7 Vdc quiescent bias. |
| 5, 8 | RFoutA / VDSA | Carrier path RF output and drain terminal; connected to VDDA (must tie VDDA/VDDB together). |
| 6, 7 | RFoutB / VDSB | Peaking path RF output and drain terminal; DC-coupled and RF-independent per datasheet Figure 1. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetrical Doherty Architecture | Enables >46% drain efficiency at 89 W avg. while maintaining linearity for wideband W-CDMA/LTE signals. |
| Integrated Input/Output Matching | Eliminates external matching networks in 50 Ω systems, reducing PCB area and insertion loss in final-stage PAs. |
| High Negative VGS Range | –6.0 Vdc gate-source rating allows stable Class C peaking operation and improved back-off efficiency. |
| Digital Predistortion Support | Low AM/PM distortion (–26° max) and broadband linearity enable effective DPD correction across 70 MHz bandwidth. |
| Robust Mismatch Tolerance | Withstands 10:1 VSWR at 32 Vdc without degradation-critical for field-deployed macrocell antennas with variable impedance. |
Applications
| Macrocell Base Station PA | Multi-Carrier W-CDMA Transmitter |
|---|---|
Use Scenario: Final-stage power amplifier in outdoor macrocell BTS operating in Band I (2110–2170 MHz UL / 2110–2200 MHz DL). IC Role / Device Role / Timing Role: Dual-path Doherty transistor providing carrier and peaking amplification with integrated impedance matching. Use Value: Delivers 89 W avg. output with 46.2% efficiency and –33.9 dBc ACPR, reducing cooling requirements and power supply sizing. |
Use Scenario: High-linearity transmitter supporting four-carrier W-CDMA with 9.9 dB PAR and 3.84 MHz channel spacing. IC Role / Device Role / Timing Role: Asymmetrical Doherty RF power transistor enabling wide instantaneous bandwidth and DPD-compatible signal fidelity. Use Value: Achieves 0.15 dB gain flatness over 70 MHz and –26° AM/PM, allowing accurate digital linearization across multi-carrier bands. |
| LTE-A 20 MHz Channel PA | Remote Radio Head (RRH) Final Stage |
Use Scenario: Final amplifier stage in LTE-Advanced eNodeB supporting 20 MHz contiguous bandwidth at 2145 MHz center frequency. IC Role / Device Role / Timing Role: High-efficiency LDMOS transistor delivering 89 W avg. with <0.01% CCDF probability at 9.9 dB PAR. Use Value: Maintains –33.9 dBc ACPR at ±5 MHz offset, meeting 3GPP TS 36.104 spectral emission limits for Category 4+ user equipment. |
Use Scenario: Compact, thermally efficient final-stage PA in fiber-fed remote radio head deployed on cell tower sectors. IC Role / Device Role / Timing Role: Air-cavity packaged Doherty transistor with 0.26 °C/W RθJC, enabling passive heatsink-only thermal management. Use Value: Operates reliably at TC = 125 °C case temperature, eliminating need for forced-air cooling in space-constrained RRH enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AFM905S | Same NI-1230S-4S4S package; 2110–2200 MHz; 80 W avg., 44% ηD, –32 dBc ACPR - lower power and efficiency than A2T21H450W19SR6. | Targeted at mid-power macrocells or microcells where thermal budget is tighter but peak output is lower. | Select AFM905S when system-level output requirement is ≤80 W avg. and board space constraints favor identical footprint. |
| MMRF1022 | NI-780-4L package; 1805–2200 MHz; 100 W avg., 47% ηD, –34 dBc ACPR - wider bandwidth, higher power, different thermal interface. | Suitable for multi-band (Band III + Band I) base stations requiring broader frequency coverage and higher output headroom. | Choose MMRF1022 for new designs needing >89 W avg. or dual-band operation; requires PCB redesign due to non-pin-compatible package. |
Compared with AFM905S and MMRF1022, the A2T21H450W19SR6 offers optimal balance of 89 W output, 46.2% efficiency, and proven Doherty linearity specifically tuned for Band I macrocell deployment-making it ideal for cost- and thermally sensitive single-band BTS upgrades without layout changes.
Availability
A2T21H450W19SR6 is available at Aetrix Electronics and suitable for cellular infrastructure, macrocell base station power amplifiers, and remote radio head final-stage designs requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.
Supply support for A2T21H450W19SR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors acquired Freescale in 2015 and continues its RF Power portfolio under the Airfast brand, specializing in high-efficiency LDMOS and GaN transistors for wireless infrastructure.
The A2T21H450W19SR6 belongs to the Airfast RF Power LDMOS family, engineered specifically for asymmetrical Doherty architectures in 3G/4G cellular base stations operating between 2110–2200 MHz.
FAQ
What is the maximum continuous drain voltage rating for the A2T21H450W19SR6?
The A2T21H450W19SR6 has a maximum drain-source voltage rating (VDSS) of +65 Vdc and –0.5 Vdc. This rating ensures safe operation under transient voltage conditions common in RF power amplifier circuits, including switching spikes and load mismatch events. The device must not be operated beyond these limits to prevent permanent damage to the LDMOS die.
Does the A2T21H450W19SR6 require external input/output matching networks?
No, the A2T21H450W19SR6 is internally matched for 50 Ω systems across its 2110–2200 MHz operating band. The datasheet confirms functional test performance in a 50 Ω test fixture without external matching, simplifying PCB layout and reducing insertion loss. External tuning may be applied only for optimization beyond standard specifications.
What is the recommended gate bias for the peaking path (Side B) of the A2T21H450W19SR6?
The peaking path (Side B) of the A2T21H450W19SR6 is specified for VGSB = 0.7 Vdc under typical W-CDMA test conditions (VDD = 30 Vdc, IDQA = 800 mA). This low gate bias enables Class C operation, essential for Doherty efficiency enhancement. Bias stability is maintained using VBWBG (Pin 4) with appropriate broadband decoupling.
How does the A2T21H450W19SR6 support digital predistortion (DPD) linearization?
The A2T21H450W19SR6 supports DPD through low AM/PM distortion (–26° max), broadband linearity (0.15 dB gain flatness over 70 MHz), and consistent ACPR (–33.9 dBc) across its band. Its VBW resonance at 150 MHz aids third-order IMD suppression, and its 10:1 VSWR tolerance ensures stable DPD convergence under real-world antenna mismatch conditions.
What thermal interface material is recommended for mounting the A2T21H450W19SR6?
NXP recommends solder reflow attachment per Application Note AN1908 for the A2T21H450W19SR6's NI-1230S-4S4S package. Thermal interface materials are not used-direct soldering to a copper heatsink or thermal pad ensures optimal 0.26 °C/W junction-to-case thermal resistance. Conductive epoxy or thermal paste is not advised and voids reliability guarantees.
A2T21H450W19SR6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-1230S-4S4S
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 2.11GHz ~ 2.2GHz
- Gain:
- 15.7dB
- Voltage - Test:
- 30 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 800 mA
- Power - Output:
- 89W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-1230S-4S4S
A2T21H450W19SR6 FAQ
1.How can I place an order for A2T21H450W19SR6 through Aetrix?
Please submit a Request for Quotation (RFQ) for A2T21H450W19SR6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A2T21H450W19SR6 reliable?
The price and inventory of A2T21H450W19SR6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A2T21H450W19SR6 is usually 5 days.
3.What payment methods are accepted for A2T21H450W19SR6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A2T21H450W19SR6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for A2T21H450W19SR6?
A2T21H450W19SR6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A2T21H450W19SR6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A2T21H450W19SR6?
For technical support, including A2T21H450W19SR6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A2T21H450W19SR6 requirements.
6.How does Aetrix verify that A2T21H450W19SR6 is sourced from the original manufacturer or authorized distributors?
All A2T21H450W19SR6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A2T21H450W19SR6 meets industry standards.
7.What is the process for return or replacement of A2T21H450W19SR6?
All A2T21H450W19SR6 units undergo pre-shipment inspection (PSI). If there is an issue with A2T21H450W19SR6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A2T21H450W19SR6 part is unused and in its original packaging.
Return procedure for A2T21H450W19SR6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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