NXP Semiconductors A2T21S260W12NR3

Overview

A2T21S260W12NR3 from NXP Semiconductors is an N-channel enhancement-mode LDMOS RF power transistor designed for cellular base station amplifiers operating in the 2110–2200 MHz band. It delivers 56 W average output power at 28 Vdc, achieves 17.9 dB typical power gain and 31.8% drain efficiency under single-carrier W-CDMA conditions (PAR = 9.9 dB), and supports Doherty amplifier architectures.

For engineers reviewing the A2T21S260W12NR3 datasheet, A2T21S260W12NR3 pinout, A2T21S260W12NR3 application, or A2T21S260W12NR3 equivalent, key selection criteria include its 2110–2200 MHz instantaneous bandwidth, ability to withstand 10:1 VSWR load mismatch, thermal resistance of 0.24 °C/W, and optimized gate-source voltage range for Class C operation.

Technical Context

This LDMOS transistor operates with a 28 Vdc drain supply and 1600 mA quiescent drain current, enabling high-efficiency linear amplification across a 90 MHz contiguous bandwidth. Its internally matched input and output simplify PCB layout, while the exposed backside source terminal provides low-inductance grounding and thermal conduction path.

The device features a gate threshold voltage of 1.7 Vdc (typ), gate quiescent voltage of 2.6 Vdc (typ), and drain-source on-voltage of 0.17 Vdc (typ) - all supporting stable biasing and low conduction loss. VBW pins (pins 2 and 4) allow dual-path VDD current routing to reduce parasitic inductance in high-frequency RF power stages.

Key Specifications

Pinout & Package

Package: OM-880X-2L2L - over-molded plastic package with exposed copper backside acting as the source terminal and primary thermal path. Dimensions conform to JEDEC MO-235, 13.2 mm × 13.2 mm × 4.5 mm body height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with A2T21S260W12NR3, A2T21S260W12N offers identical RF performance but lacks tape-and-reel packaging for SMT lines, while MRF6VP2600HR5 trades gain and voltage compatibility for higher peak power - making A2T21S260W12NR3 optimal for cost-sensitive, 28 Vdc, 56 W avg. Band 1 base station applications.

Availability

A2T21S260W12NR3 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, and active antenna systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for telecom infrastructure programs.

Supply support for A2T21S260W12NR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

A2T21S260W12NR3 belongs to the Airfast RF Power portfolio, engineered specifically for energy-efficient, broadband cellular infrastructure amplifiers operating in licensed sub-6 GHz spectrum.

FAQ

What is the maximum continuous drain current rating for A2T21S260W12NR3?

The A2T21S260W12NR3 has no standalone maximum continuous drain current rating listed; instead, it is characterized at 1600 mA IDQ under typical W-CDMA operating conditions (28 Vdc, 56 W avg.). Absolute maximum ratings define safe operating area via VDSS (+65 Vdc), VGS (–6.0 to +10 Vdc), and junction temperature (–40 to +225 °C), with thermal design governed by RθJC = 0.24 °C/W. The A2T21S260W12NR3 must be operated within these boundaries to ensure reliability.

Does A2T21S260W12NR3 require external input/output matching networks?

No - the A2T21S260W12NR3 is internally matched for 50 Ω systems across 2110–2200 MHz, eliminating the need for discrete input/output matching components in standard reference designs. However, external harmonic filters and DC blocking/bias feed networks remain necessary, as shown in the official test circuit (Figure 2). The A2T21S260W12NR3's internal matching simplifies layout but does not replace system-level impedance control.

Can A2T21S260W12NR3 be used in GaN-compatible PCB layouts?

No - the A2T21S260W12NR3 is an LDMOS device in an OM-880X-2L2L plastic package with specific thermal and RF layout requirements distinct from GaN-on-SiC transistors. Its exposed source backside, VBW pin configuration, and 0.24 °C/W RθJC demand dedicated copper pour and mounting pressure profiles. Using A2T21S260W12NR3 in a GaN-optimized layout risks thermal runaway, impedance mismatch, and degraded ACPR performance.

What is the gate quiescent voltage range for A2T21S260W12NR3 under typical operating conditions?

The A2T21S260W12NR3 exhibits a gate quiescent voltage (VGS(Q)) range of 2.2 to 3.0 Vdc (typ. 2.6 Vdc) when biased at VDD = 28 Vdc and IDQ = 1600 mA in functional testing. This narrow window reflects tight process control and enables stable Class AB/Doherty biasing. Deviations outside this range indicate improper gate bias network design or thermal drift - both of which directly impact the A2T21S260W12NR3's linearity and efficiency.

Is A2T21S260W12NR3 suitable for LTE-Advanced carrier aggregation applications?

Yes - the A2T21S260W12NR3 supports instantaneous 90 MHz bandwidth (2110–2200 MHz) and demonstrates <1.2 dB gain flatness at 56 W avg., making it suitable for intra-band carrier aggregation of up to three 20 MHz LTE carriers. Its –33.5 dBc ACPR and –25 dB IRL meet 3GPP ACLR requirements for Cat.6+ UEs. However, inter-band CA requires external diplexers or switch filters, as the A2T21S260W12NR3 operates only within its specified 2110–2200 MHz band.