NXP Semiconductors A2T27S020GNR1

Overview

A2T27S020GNR1 from NXP Semiconductors is a 2.5 W average RF power LDMOS transistor designed for cellular base station amplification in the 400–2700 MHz band, operating at 28 Vdc with 185 mA quiescent drain current and delivering 21.1 dB typical power gain at 1840 MHz under W-CDMA conditions.

For engineers reviewing the A2T27S020GNR1 datasheet, A2T27S020GNR1 pinout, A2T27S020GNR1 application, or A2T27S020GNR1 equivalent, key selection criteria include broadband gain flatness (0.4 dB over 75 MHz), –45.3 dBc adjacent channel power ratio at 2.5 W avg., thermal resistance of 1.6 °C/W, and compatibility with digital predistortion systems for linearization in LTE and 5G infrastructure.

Technical Context

This N-channel enhancement-mode lateral MOSFET supports Class AB and Class C operation with a gate-source voltage range of –6.0 to +10 Vdc and drain-source voltage rating up to +65 Vdc. Its design targets high-efficiency, broadband RF power amplification in multi-band macrocell and small-cell base stations.

The device delivers stable performance across three defined frequency bands-1805–1880 MHz, 2110–2170 MHz, and 2575–2635 MHz-with measured drain efficiency of 20.9% at 1840 MHz and 20.4% at 2605 MHz, while maintaining input return loss better than –9 dB and output PAR of 9.2 dB at 0.01% CCDF probability.

Key Specifications

Pinout & Package

Package: TO-270G-2 plastic over-molded package with exposed source pad on backside; thermally optimized for surface-mount soldering to copper heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with A2T27S020NR1, the A2T27S020GNR1 offers improved heatsink interface geometry and verified G-grade thermal performance, while the MRF6P27025HR5 serves a distinct high-power tier with no functional overlap in 2.5 W driver applications.

Availability

A2T27S020GNR1 is available at Aetrix Electronics and suitable for macrocell base station drivers, small-cell remote radio heads, distributed antenna systems, and 5G NR sub-6 GHz active antenna units requiring stable component supply and long-term lifecycle support.

Supply support for A2T27S020GNR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technology.

The A2T27S020GNR1 belongs to NXP's AIRFAST RF Power LDMOS family, engineered specifically for energy-efficient, broadband amplification in 4G/LTE and early 5G cellular infrastructure equipment.

FAQ

What is the maximum continuous drain voltage rating for the A2T27S020GNR1?

The A2T27S020GNR1 has a maximum drain-source voltage (VDSS) rating of +65 Vdc, with a minimum of –0.5 Vdc. This allows safe operation under transient voltage spikes common in RF power amplifier bias networks, provided gate-source voltage remains within –6.0 to +10 Vdc limits. The A2T27S020GNR1 is rated for 32 Vdc operating voltage, making it compatible with standard 28 V telecom power supplies with margin.

Does the A2T27S020GNR1 require external gate bias circuitry?

Yes, the A2T27S020GNR1 requires an external gate bias network to establish the 1.5–2.3 Vdc quiescent gate voltage (VGS(Q)) at 185 mA IDQ. Typical implementations use resistive dividers with RF chokes and decoupling capacitors, as shown in Figures 2, 8, and 12 of the datasheet. The A2T27S020GNR1 does not integrate bias regulation or protection circuitry.

Can the A2T27S020GNR1 be used in Doherty amplifier configurations?

Yes, the A2T27S020GNR1 supports Doherty operation due to its extended negative gate-source voltage range (down to –6.0 Vdc), enabling stable Class C peaking amplifier bias. Its validated performance under 9.9 dB PAR W-CDMA signals and low AM/PM distortion (–11° max) make it suitable for digitally predistorted Doherty architectures in 4G/5G base stations. The A2T27S020GNR1's thermal resistance of 1.6 °C/W further supports asymmetric Doherty thermal profiles.

What is the recommended PCB layout practice for the A2T27S020GNR1 thermal interface?

NXP specifies direct soldering of the A2T27S020GNR1's exposed source pad (backside of TO-270G-2 package) to a large copper heatsink area using controlled reflow per AN1907. Thermal vias under the pad and 2 oz. copper are recommended. The A2T27S020GNR1 datasheet confirms all performance data was measured with the device soldered to heatsink, and thermal resistance degrades significantly without proper thermal attachment.

Is the A2T27S020GNR1 pin-compatible with earlier revisions of the same part number?

Yes-the A2T27S020GNR1 maintains identical pinout versus Revision 1 and 0, with correction confirmed in Rev. 2 (March 2019) clarifying Pin 1 as RFout/VDS and Pin 2 as RFin/VGS in Figure 1. No changes to terminal assignment or mechanical footprint occurred across revisions; only test methodology and performance data were updated. The A2T27S020GNR1 may be substituted into existing designs qualified with earlier revisions without layout modification.