My Inquiry
My Account
NXP Semiconductors A2V07H400-04NR3
- Part No.:
- A2V07H400-04NR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- OM-780G-4L
- Datasheet:
-
A2V07H400-04NR3.pdf
- Description:
- RF MOSFET LDMOS 48V OM780G-4
- Quantity:
- Payment:
- Shipping:
Inventory:9,674
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
A2V07H400-04NR3 from NXP Semiconductors is a 107 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating from 420 to 851 MHz. It delivers 19.9 dB power gain, 59.4% drain efficiency, and –30.1 dBc ACPR at 623 MHz under W-CDMA single-carrier conditions (48 Vdc, 107 W avg., PAR = 9.9 dB). Its dual-gate architecture supports carrier-peaking operation in macrocell and MIMO remote radio heads.
For engineers reviewing the A2V07H400-04NR3 datasheet, A2V07H400-04NR3 pinout, A2V07H400-04NR3 application, or A2V07H400-04NR3 equivalent, key selection criteria include its 48 Vdc operation, 0.35 °C/W thermal resistance, 107 W average RF output capability, and integrated Doherty topology optimized for digital predistortion linearization in 4G/LTE infrastructure.
Technical Context
The A2V07H400-04NR3 implements an asymmetrical Doherty architecture with separate carrier (Side A) and peaking (Side B) transistors in a monolithic plastic package. Carrier-side gate threshold is 1.3–2.3 Vdc; peaking-side threshold is 1.3–2.3 Vdc. Both sides operate at 48 Vdc drain supply, with independent gate bias control (VGSA and VGSB).
It features internal input matching, a thermally enhanced OM-780-4L package with exposed source, and ESD protection rated Class 2 HBM and C3 CDM. The device is characterized across three frequency bands: 420–470 MHz, 595–652 MHz, and 758–822 MHz, with load-pull data provided for both P1dB and P3dB optimization.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 420–851 MHz - Covers LTE Bands 13/14/17/18/19/20/25/26/28/38/41/42/43/48/66/71 for macrocell and distributed antenna systems. |
| Average RF Output Power | 107 W @ 623 MHz - Enables high-efficiency amplification of W-CDMA/LTE signals with 9.9 dB PAR without external combiners. |
| Drain Efficiency | 59.4% @ 623 MHz - Reduces thermal load and power supply requirements in densely packed RF front-ends. |
| Power Gain | 19.9 dB @ 623 MHz - Minimizes driver stage complexity and enables direct drive from lower-power GaN or LDMOS drivers. |
| ACPR | –30.1 dBc @ ±5 MHz offset - Meets stringent spectral mask requirements for LTE Base Station Class A/B compliance. |
| Thermal Resistance | 0.35 °C/W - Supports high-power operation up to +150 °C case temperature with standard heatsink mounting. |
| ESD Rating | HBM Class 2 (2 kV), CDM Class C3 - Ensures robustness during PCB assembly and field handling in telecom environments. |
Pinout & Package
Package: OM-780-4L - Thermally enhanced plastic overmolded package with exposed copper backside (source terminal) and four leads. Dimensions: 10.16 mm × 10.16 mm × 4.57 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - RFinA / VGSA | Carrier gate input | Bias and RF input for carrier amplifier section; requires DC blocking and gate bias network per AN1907. |
| 2 - RFinB / VGSB | Peaking gate input | Independent gate control for peaking amplifier; enables precise Doherty tuning and digital predistortion alignment. |
| 3 - RFoutA / VDSA | Carrier drain output | RF output and drain supply node for carrier side; connects to output combiner and 48 Vdc decoupling. |
| 4 - RFoutB / VDSB | Peaking drain output | RF output and drain supply node for peaking side; requires impedance transformation to match carrier path. |
| Exposed backside | Source terminal | Common source connection for both transistors; must be soldered to thermal pad on PCB for optimal heat dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetrical Doherty integration | Single-package carrier-peaking architecture eliminates inter-device phase/timing mismatch and reduces board area by >30% vs discrete solutions. |
| Negative gate-source voltage range | –6.0 Vdc minimum allows deep Class C peaking operation, improving efficiency at back-off power levels typical in OFDMA waveforms. |
| Digital predistortion readiness | Linearized AM/PM response (–18° max at P3dB) and broadband gain flatness (0.5 dB over 57 MHz) simplify DPD coefficient extraction and convergence. |
| Thermally optimized package | 0.35 °C/W RθJC enables >100 W continuous operation with standard forced-air cooling, reducing heatsink mass and system cost. |
| Input-matched design | Internally matched to 50 Ω at input simplifies RF layout, eliminates external matching networks, and improves production yield. |
Applications
| Macrocell Base Stations | MIMO Remote Radio Heads |
|---|---|
Use Scenario: High-power RF final stage in 4T4R or 8T8R LTE-A macrocell sites covering rural and suburban coverage zones. IC Role / Device Role / Timing Role: Asymmetrical Doherty power amplifier core delivering 107 W avg. output per channel with DPD support. Use Value: Achieves >58% drain efficiency at 623 MHz while meeting ACLR < –45 dBc, extending site uptime and reducing OPEX. | Use Scenario: Compact, air-cooled RRH units deployed on cell towers with strict SWaP-C constraints. IC Role / Device Role / Timing Role: Dual-path RF power stage enabling spatial multiplexing and beamforming with synchronized carrier-peaking timing. Use Value: OM-780-4L package enables 25% smaller PCB footprint vs legacy flanged packages, accelerating time-to-market for 5G-ready RRHs. |
| Private LTE Networks | CBRS Band 48 Infrastructure |
Use Scenario: Industrial campus networks requiring high-reliability, low-latency wireless connectivity for IoT and automation. IC Role / Device Role / Timing Role: Final-stage PA supporting TDD-LTE in 3.5 GHz guard band with fast switching and low latency. Use Value: 420–851 MHz bandwidth covers 3.3–3.8 GHz via harmonic suppression filtering, enabling reuse of existing PA designs. | Use Scenario: Shared-spectrum small cells operating in 3.55–3.7 GHz CBRS band with FCC Part 96 compliance. IC Role / Device Role / Timing Role: Linearized PA stage supporting multi-user MIMO and dynamic spectrum access protocols. Use Value: –30.1 dBc ACPR at 623 MHz translates to –42 dBc at third harmonic, easing filter requirements for out-of-band emission compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AFM34005S | 5 W avg. output, 2.3–2.7 GHz band, GaN-on-SiC process; 65% peak efficiency. | Targeted for 5G mmWave active antenna systems, not sub-1 GHz macrocell infrastructure. | Select when operating above 2 GHz with higher frequency agility and lower thermal mass requirements. |
| MRFE6VP61K25H | 1.2 kW PEP, 1.8–2.2 GHz, TO-272 package; no integrated Doherty architecture. | Designed for broadcast and radar applications requiring ultra-high peak power, not cellular linearity. | Select only for non-Doherty, high-PAPR pulsed-RF applications where envelope tracking is impractical. |
Compared with AFM34005S and MRFE6VP61K25H, the A2V07H400-04NR3 uniquely delivers 107 W avg. Doherty performance in the 420–851 MHz band with monolithic integration, making it the only drop-in solution for LTE Band 13/17/20/25/66/71 macrocell upgrades requiring minimal redesign.
Availability
A2V07H400-04NR3 is available at Aetrix Electronics and suitable for macrocell base stations, MIMO remote radio heads, private LTE networks, and CBRS Band 48 infrastructure requiring stable component supply across multi-year telecom deployments.
Supply support for A2V07H400-04NR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with >50 years of RF power expertise.
The A2V07H400-04NR3 belongs to the AIRFAST® RF Power portfolio, engineered specifically for energy-efficient, digitally linearized cellular infrastructure amplifiers operating below 1 GHz.
FAQ
What is the maximum operating junction temperature for the A2V07H400-04NR3?
The A2V07H400-04NR3 has an operating junction temperature range of –40 °C to +225 °C. This rating enables reliable operation in high-ambient environments such as rooftop base stations and enclosed RRH enclosures. Thermal design must maintain TJ ≤ 225 °C using the specified 0.35 °C/W RθJC, and the A2V07H400-04NR3 datasheet provides derating curves for extended lifetime at elevated temperatures.
Does the A2V07H400-04NR3 require external input matching networks?
No, the A2V07H400-04NR3 is internally input-matched to 50 Ω across its 420–851 MHz operating band. This eliminates the need for external input matching components, simplifying PCB layout and improving manufacturing yield. However, external gate bias networks (R1/R2 in Figure 2) and RF chokes remain required for stable DC biasing and isolation, as detailed in the A2V07H400-04NR3 test circuit documentation.
What is the recommended gate bias voltage for peaking-side operation of the A2V07H400-04NR3?
The A2V07H400-04NR3 peaking-side (Side B) gate bias voltage is typically set to VGSB = 1.3 Vdc for 623 MHz W-CDMA operation, as validated in Table 5 functional tests. At 758–822 MHz, VGSB = 0.99 Vdc is used to optimize efficiency. These values are confirmed in the device's load-pull characterization and must be adjusted per frequency band and modulation scheme to maintain optimal Doherty compression point alignment.
How does the A2V07H400-04NR3 support digital predistortion (DPD) linearization?
The A2V07H400-04NR3 supports DPD through low AM/PM distortion (–18° max at P3dB), broadband gain flatness (0.5 dB over 57 MHz), and consistent ACPR performance (–30.1 dBc) across its operating band. Its monolithic asymmetrical Doherty structure ensures tight carrier-peaking phase alignment, reducing DPD model complexity and accelerating convergence in real-time adaptive algorithms used in modern LTE/5G baseband processors.
What is the moisture sensitivity level (MSL) rating for the A2V07H400-04NR3 package?
The A2V07H400-04NR3 is rated MSL Level 3 per J-STD-020, with a peak reflow temperature of 260 °C. This allows standard lead-free reflow profiles without baking preconditioning for most production environments. The OM-780-4L plastic package incorporates moisture-resistant molding compound, and full reflow guidelines-including soak time and ramp rates-are specified in NXP Application Note AN1907 for high-power RF devices.
A2V07H400-04NR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- OM-780G-4L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 595MHz ~ 851MHz
- Gain:
- 19.9dB
- Voltage - Test:
- 48 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 700 mA
- Power - Output:
- 267W
- Voltage - Rated:
- 105 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- OM-780G-4L
A2V07H400-04NR3 FAQ
1.How can I place an order for A2V07H400-04NR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for A2V07H400-04NR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A2V07H400-04NR3 reliable?
The price and inventory of A2V07H400-04NR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A2V07H400-04NR3 is usually 5 days.
3.What payment methods are accepted for A2V07H400-04NR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A2V07H400-04NR3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for A2V07H400-04NR3?
A2V07H400-04NR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A2V07H400-04NR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A2V07H400-04NR3?
For technical support, including A2V07H400-04NR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A2V07H400-04NR3 requirements.
6.How does Aetrix verify that A2V07H400-04NR3 is sourced from the original manufacturer or authorized distributors?
All A2V07H400-04NR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A2V07H400-04NR3 meets industry standards.
7.What is the process for return or replacement of A2V07H400-04NR3?
All A2V07H400-04NR3 units undergo pre-shipment inspection (PSI). If there is an issue with A2V07H400-04NR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A2V07H400-04NR3 part is unused and in its original packaging.
Return procedure for A2V07H400-04NR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
A2V07H400-04NR3 Tags
-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits
-
TAV2-501+
Mini-Circuits
-
CE3514M4-C2
CEL
-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits
-
CE3512K2-C1
CEL
-
AFM907NT1
NXP Semiconductors
-
SKY65050-372LF
Skyworks Solutions Inc.
-
CE3520K3-C1
CEL
-
AFT09MS007NT1
NXP USA Inc.
-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
