My Inquiry
My Account
NXP Semiconductors A2V07H525-04NR6
- Part No.:
- A2V07H525-04NR6
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- OM-1230-4L
- Datasheet:
-
A2V07H525-04NR6.pdf
- Description:
- RF MOSFET LDMOS 48V OM1230-4
- Quantity:
- Payment:
- Shipping:
Inventory:5,438
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
A2V07H525-04NR6 from NXP Semiconductors is a 120 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating from 595 to 851 MHz. It features dual-gate architecture (carrier and peaking paths), 48 V operation, 56.9% drain efficiency at 623 MHz, and –29.2 dBc ACPR under W-CDMA single-carrier conditions.
For engineers reviewing the A2V07H525-04NR6 datasheet, A2V07H525-04NR6 pinout, A2V07H525-04NR6 application, or A2V07H525-04NR6 equivalent, key selection criteria include Doherty configuration support, thermal resistance of 0.37 °C/W, gate voltage range (–6.0 to +10 V), ESD Class 2 HBM rating, and OM-1230-4L plastic package compatibility with high-power RF PCB layouts.
Technical Context
This device implements an integrated asymmetrical Doherty architecture with separate carrier and peaking transistors in a monolithic plastic package. The carrier side operates at IDQA = 700 mA with VGSA(Q) = 2.0–3.3 Vdc, while the peaking side uses VGSB = 0.5 Vdc (low-band) or 1.25 Vdc (high-band) biasing for optimized Class C behavior.
It supports digital predistortion (DPD) correction via its wideband linearity performance: AM/PM distortion ≤ –18° across 595–652 MHz, gain flatness of 0.6 dB over 57 MHz bandwidth, and load mismatch tolerance up to VSWR 10:1 at 55 Vdc with no degradation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 595–851 MHz - Covers major LTE bands including B13/B14 (746–806 MHz), B17/B18/B19 (704–894 MHz), and legacy PCS/Cellular bands. |
| Output Power | 120 W Avg. - Delivers full rated average output under W-CDMA single-carrier signal with 9.9 dB PAR at 0.01% CCDF probability. |
| Drain Efficiency | 56.9% @ 623 MHz - Enables high-efficiency macro base station PA stages with reduced cooling requirements and power supply burden. |
| ACPR | –29.2 dBc @ ±5 MHz offset - Meets stringent spectral mask requirements for 3GPP LTE and UMTS deployments without excessive filtering. |
| Thermal Resistance | 0.37 °C/W - Allows direct mounting to heatsinks in high-power outdoor cabinet designs with predictable junction temperature rise. |
| ESD Rating | HBM Class 2 (±2 kV), CDM Class C3 - Supports robust handling during assembly and field maintenance in telecom infrastructure environments. |
| Package | OM-1230-4L - Thermally enhanced plastic overmolded package with exposed source paddle for low-inductance grounding and efficient heat transfer. |
Pinout & Package
OM-1230-4L is a thermally optimized 4-lead plastic package with exposed backside source terminal. The package measures 10.16 mm × 12.70 mm × 4.57 mm and features solderable copper paddle for mechanical stability and thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - RFinA/VGSA | Carrier gate input | Bias and RF drive node for carrier amplifier section; requires DC blocking and impedance matching network per application note AN1907. |
| 2 - RFinB/VGSB | Peaking gate input | Independent gate control for peaking path; bias voltage sets Class C conduction angle (0.5 Vdc for 595–652 MHz, 1.25 Vdc for 758–803 MHz). |
| 3 - RFoutA/VDSA | Carrier drain output | High-current RF output node for carrier path; connects to internal combiner and external output matching network. |
| 4 - RFoutB/VDSB | Peaking drain output | High-current RF output node for peaking path; phase-aligned with carrier output for Doherty combining. |
| Exposed Backside | Source (common) | Electrically and thermally connected to both transistor sources; must be soldered to PCB ground plane for optimal RF performance and thermal dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated asymmetrical Doherty topology | Enables >55% drain efficiency at backed-off PAPR conditions without external combiners or separate die integration. |
| Wider negative VGS range (–6.0 V) | Supports deep Class C peaking operation with improved linearity headroom and DPD convergence stability. |
| Internal input matching | Reduces external component count on gate networks; simplifies layout for 50 Ω system interfaces in base station reference designs. |
| High ruggedness (VSWR 10:1) | Withstands antenna mismatch events at full rated power without degradation-critical for remote radio head (RRH) reliability. |
| Moisture Sensitivity Level 3 | Compatible with standard SMT reflow profiles (peak 260 °C); eliminates need for dry-pack handling in production. |
Applications
| Macro Base Station Transceiver | Remote Radio Head (RRH) |
|---|---|
Use Scenario: High-power multi-carrier LTE transmission in urban macro cell sites with 2×2 MIMO and 20 MHz channel bandwidth. IC Role / Device Role / Timing Role: Final-stage Doherty PA delivering 120 W avg. output across 758–803 MHz band with DPD correction. Use Value: Achieves 53–54% efficiency at 120 W with –31.1 dBc ACPR, reducing system power consumption and thermal management complexity. | Use Scenario: Compact outdoor-mounted RRH unit supporting Band 13 (746–756 MHz) and Band 14 (758–768 MHz) for public safety networks. IC Role / Device Role / Timing Role: Dual-path RF power amplifier enabling high-efficiency linear amplification in space-constrained enclosures. Use Value: OM-1230-4L package enables direct heatsink mounting; 0.37 °C/W RθJC ensures junction temperature remains <125 °C at TC = 77 °C. |
| Multi-Band Cellular Infrastructure | Legacy 3G/UMTS Node B |
Use Scenario: Dual-band (617–698 MHz + 758–803 MHz) active antenna system requiring shared PA resources. IC Role / Device Role / Timing Role: Reconfigurable Doherty PA with frequency-tuned matching networks for two distinct bands. Use Value: Verified performance across 595–851 MHz allows single-part logistics and simplified inventory for multi-band BTS platforms. | Use Scenario: UMTS FDD base station upgrade using W-CDMA 3.84 MHz channels with 9.9 dB PAR signals. IC Role / Device Role / Timing Role: High-linearity RF power stage meeting 3GPP TS 25.104 adjacent channel leakage requirements. Use Value: –29.2 dBc ACPR at 623 MHz meets stringent ACLR masks for 5 MHz offset without additional predistortion overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6VP2600HR5 | 600 W P3dB, 28 V operation, 1.8–2.2 GHz range - higher power but incompatible frequency and voltage. | Designed for microwave point-to-point links, not sub-1 GHz cellular infrastructure. | Select only for 2 GHz+ systems requiring higher peak power; not suitable for A2V07H525-04NR6's 595–851 MHz band. |
| AFM906S | 120 W avg., 600–960 MHz, 28 V - lower supply voltage, different Doherty tuning and thermal profile. | Optimized for small-cell and micro base stations with lower voltage rails and compact heatsinking. | Prefer for 28 V systems or space-constrained deployments; requires redesign of bias and matching networks. |
Compared with MRF6VP2600HR5 and AFM906S, the A2V07H525-04NR6 uniquely delivers 48 V, 120 W avg. Doherty performance across 595–851 MHz with validated 0.37 °C/W thermal resistance and Class C peaking gate control-making it the only drop-in solution for macro base station upgrades in this band.
Availability
A2V07H525-04NR6 is available at Aetrix Electronics and suitable for macro base station transceivers, remote radio heads, multi-band cellular infrastructure, and legacy 3G/UMTS Node B deployments requiring stable component supply and long-term lifecycle support.
Supply support for A2V07H525-04NR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies.
The A2V07H525-04NR6 belongs to NXP's AIRFAST RF Power LDMOS family, engineered specifically for energy-efficient, digitally predistorted cellular infrastructure amplifiers operating below 1 GHz.
FAQ
What is the maximum continuous drain voltage rating for the A2V07H525-04NR6?
The A2V07H525-04NR6 has a maximum drain-source voltage (VDSS) rating of +105 Vdc and –0.5 Vdc. This rating applies to both carrier and peaking transistors and defines the absolute limit for safe DC biasing and transient voltage tolerance during VSWR events. Operation above +105 Vdc risks permanent damage to the LDMOS structure.
Does the A2V07H525-04NR6 require external input matching networks?
No-the A2V07H525-04NR6 is internally input matched for 50 Ω systems across its operational band. As stated in the datasheet, "Part internally input matched." However, external gate bias networks (including decoupling and stabilization) and output matching networks remain mandatory to achieve specified gain, efficiency, and linearity performance.
How does the A2V07H525-04NR6 support digital predistortion (DPD) systems?
The A2V07H525-04NR6 supports DPD through its wideband linearity characteristics: AM/PM distortion ≤ –18°, gain flatness of 0.6 dB over 57 MHz, and consistent ACPR performance (–29.2 dBc typical) across 595–652 MHz. Its dual-gate architecture allows independent optimization of carrier and peaking bias points to improve DPD model convergence and residual error suppression.
What is the thermal resistance (RθJC) of the A2V07H525-04NR6 and under what test conditions is it measured?
The thermal resistance junction-to-case (RθJC) of the A2V07H525-04NR6 is 0.37 °C/W. This value is measured at case temperature TC = 77 °C, with 120 W average output power, W-CDMA signal, 48 Vdc supply, IDQA = 700 mA, VGSB = 0.5 Vdc, and 623 MHz frequency-per Table 2 in the official NXP datasheet.
Can the A2V07H525-04NR6 operate in both 595–652 MHz and 758–803 MHz bands without hardware changes?
Yes-the A2V07H525-04NR6 is characterized and qualified for full performance across 595–851 MHz. While optimal matching networks differ between low-band (595–652 MHz) and high-band (758–803 MHz), the same A2V07H525-04NR6 die and package support both ranges. NXP provides separate test circuit layouts and component values for each band in the datasheet (Figures 2 & 24, Tables 7 & 12).
A2V07H525-04NR6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- OM-1230-4L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 595MHz ~ 851MHz
- Gain:
- 17.5dB
- Voltage - Test:
- 48 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 700 mA
- Power - Output:
- 120W
- Voltage - Rated:
- 105 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- OM-1230-4L
A2V07H525-04NR6 FAQ
1.How can I place an order for A2V07H525-04NR6 through Aetrix?
Please submit a Request for Quotation (RFQ) for A2V07H525-04NR6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A2V07H525-04NR6 reliable?
The price and inventory of A2V07H525-04NR6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A2V07H525-04NR6 is usually 5 days.
3.What payment methods are accepted for A2V07H525-04NR6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A2V07H525-04NR6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for A2V07H525-04NR6?
A2V07H525-04NR6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A2V07H525-04NR6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A2V07H525-04NR6?
For technical support, including A2V07H525-04NR6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A2V07H525-04NR6 requirements.
6.How does Aetrix verify that A2V07H525-04NR6 is sourced from the original manufacturer or authorized distributors?
All A2V07H525-04NR6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A2V07H525-04NR6 meets industry standards.
7.What is the process for return or replacement of A2V07H525-04NR6?
All A2V07H525-04NR6 units undergo pre-shipment inspection (PSI). If there is an issue with A2V07H525-04NR6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A2V07H525-04NR6 part is unused and in its original packaging.
Return procedure for A2V07H525-04NR6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
A2V07H525-04NR6 Tags
-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits
-
TAV2-501+
Mini-Circuits
-
CE3514M4-C2
CEL
-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits
-
CE3512K2-C1
CEL
-
AFM907NT1
NXP Semiconductors
-
SKY65050-372LF
Skyworks Solutions Inc.
-
CE3520K3-C1
CEL
-
AFT09MS007NT1
NXP USA Inc.
-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
