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NXP Semiconductors A2V09H300-04NR3
- Part No.:
- A2V09H300-04NR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- OM-780G-4L
- Datasheet:
-
A2V09H300-04NR3.pdf
- Description:
- RF MOSFET LDMOS 48V OM780G-4
- Quantity:
- Payment:
- Shipping:
Inventory:8,315
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Product details
Overview
A2V09H300-04NR3 from NXP Semiconductors (formerly Freescale) is a 79 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating in the 720–960 MHz band. It delivers 19.7 dB power gain, 55.9% drain efficiency, and –33.4 dBc ACPR at 940 MHz under W-CDMA single-carrier conditions (48 Vdc, 79 W avg., PAR = 9.9 dB). Its dual-gate architecture supports carrier-peaking operation with independent bias control for digital predistortion linearization.
For engineers reviewing the A2V09H300-04NR3 datasheet, A2V09H300-04NR3 pinout, A2V09H300-04NR3 application, or A2V09H300-04NR3 equivalent, this device is selected for high-efficiency macrocell and remote radio head (RRH) PA stages requiring stable thermal performance up to +150°C case temperature and robust load mismatch tolerance (VSWR 10:1).
Technical Context
This device implements an integrated asymmetrical Doherty topology with separate carrier (Side A) and peaking (Side B) transistors in a monolithic 4-lead plastic package (OM-780-4L). The gate-source voltage range (–6.0 to +10 Vdc) enables deep Class C peaking operation, while internal input matching simplifies PCB layout for 50 Ω systems.
Thermal resistance is specified at 0.34 °C/W (junction-to-case), validated at 79 W avg. output under W-CDMA modulation at 940 MHz. Functional test conditions require independent biasing: VGSA(Q) = 2.4 Vdc (typ.) for carrier and VGSB = 1.2 Vdc (typ.) for peaking, with quiescent drain current IDQA = 400 mA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 720–960 MHz - Covers LTE Band 12/13/14/17/18/19/20/26/28 and legacy GSM/UMTS bands. |
| Output Power (Avg.) | 79 W - Sustained average output under single-carrier W-CDMA with 9.9 dB PAR at 0.01% CCDF probability. |
| Power Gain | 19.7 dB (typ.) - Measured at 940 MHz, enabling compact two-stage PA designs without intermediate gain blocks. |
| Drain Efficiency | 55.9% (typ.) - Achieved at 79 W avg. output, reducing thermal load and DC power consumption in base station cabinets. |
| ACPR | –33.4 dBc (typ.) - Adjacent channel power ratio at ±5 MHz offset, meeting 3GPP ACLR requirements for LTE FDD/TDD. |
| Junction Temp. Max | +225 °C - Enables reliable operation under high ambient and power-dense RRH thermal environments. |
| Thermal Resistance | 0.34 °C/W - Junction-to-case value measured at 76 °C case temperature, supporting heatsink sizing for continuous-wave and modulated loads. |
Pinout & Package
Package: OM-780-4L - Thermally enhanced plastic overmolded package with exposed backside source terminal (common to both sides), rated for 150 °C case temperature operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: RFoutA / VDSA | Carrier amplifier drain output | RF output node for carrier path; connects to output combiner network; requires external DC blocking and harmonic filtering. |
| 2: RFoutB / VDSB | Peaking amplifier drain output | RF output node for peaking path; phase-aligned with Pin 1 via external hybrid coupler (e.g., X3C09P1-03S); shares common source with Pin 1. |
| 3: RFinA / VGSA | Carrier amplifier gate input | Bias and RF input for carrier transistor; internally matched to 50 Ω; typical quiescent gate voltage = 2.4 Vdc. |
| 4: RFinB / VGSB | Peaking amplifier gate input | Bias and RF input for peaking transistor; independent gate control enables dynamic Doherty tuning; typical VGSB = 1.2 Vdc. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetrical Doherty Integration | Monolithic carrier-peaking pair with optimized power ratio eliminates discrete combining networks and reduces board area by >30% vs. discrete solutions. |
| Negative VGS Capability | –6.0 Vdc gate-source rating enables deep Class C peaking bias, improving efficiency at back-off without sacrificing linearity. |
| Digital Predistortion Ready | Low AM/PM distortion (–12.3° max) and flat gain variation (0.004 dB/°C) support wideband DPD convergence across temperature and frequency. |
| High Mismatch Tolerance | Rated for 10:1 VSWR at 50 Vdc and 319 W pulsed CW output with no degradation - critical for antenna coupling variations in multi-band base stations. |
| ESD Robustness | HBM Class 2 (2 kV), MM Class B, CDM Class IV - withstands handling and assembly stresses without gate oxide damage. |
Applications
| Macrocell Base Station PA | Remote Radio Head (RRH) |
|---|---|
|
Use Scenario: High-power outdoor macrocell site transmitting LTE and W-CDMA across Bands 13/17/20/28 in North America and Europe. IC Role / Device Role / Timing Role: Final-stage RF power amplifier in asymmetrical Doherty configuration, delivering 79 W avg. output into 50 Ω load with digital predistortion feedback loop. Use Value: 55.9% drain efficiency at 79 W reduces system-level power supply and cooling requirements, lowering OPEX in energy-constrained deployments. |
Use Scenario: Compact, weatherized RRH unit mounted on cell tower with integrated 720–960 MHz front-end and fiber interface. IC Role / Device Role / Timing Role: Dual-path Doherty PA core enabling high-efficiency operation within strict size and thermal envelope (<150 °C case temp). Use Value: 0.34 °C/W thermal resistance allows direct mounting to aluminum heatsink without thermal interface material, accelerating time-to-market for new RRH SKUs. |
| Multi-Band BTS Transceiver | 5G NR Sub-1 GHz Layer |
|
Use Scenario: Multi-band base transceiver station supporting concurrent LTE FDD/TDD and UMTS operation across 700–960 MHz spectrum. IC Role / Device Role / Timing Role: Reconfigurable PA stage leveraging same bias and matching network for multiple bands via tunable pre-matching. Use Value: Gain flatness of 0.3 dB over 40 MHz bandwidth ensures consistent EVM and ACLR across entire operating band without per-band calibration. |
Use Scenario: 5G NR coverage layer using n5/n8/n20/n28 bands where legacy infrastructure reuse is required. IC Role / Device Role / Timing Role: Backward-compatible PA upgrade replacing older LDMOS devices in existing 4G sites to support 5G NSA mode with minimal hardware change. Use Value: Same pinout and bias scheme as prior-generation Airfast devices enables drop-in replacement in field-deployed units, avoiding costly site visits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| A2V09H400-04NR3 | Higher P1dB (240 W vs. 223 W), identical package and pinout, but 400 W P3dB vs. 400 W - same thermal design. | Targeted for higher-output macrocells requiring >79 W avg. with same 720–960 MHz coverage. | Select when system-level output requirement exceeds 79 W avg. while retaining identical footprint and bias architecture. |
| MRF6VP2750HR5 | 750 W P3dB, 28 V operation, TO-270WB-4 package - not pin-compatible; requires full circuit redesign. | Designed for high-power broadcast and military radar, not cellular infrastructure. | Consider only for greenfield high-power applications where voltage, thermal, and layout constraints differ significantly from A2V09H300-04NR3. |
Compared with A2V09H400-04NR3 and MRF6VP2750HR5, the A2V09H300-04NR3 offers optimal balance of efficiency (55.9%), linearity (–33.4 dBc ACPR), and thermal density (0.34 °C/W) for 79 W avg. cellular base station use - making it the preferred choice for cost-sensitive, space-constrained macrocell and RRH designs.
Availability
A2V09H300-04NR3 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, multi-band BTS transceivers, and 5G NR sub-1 GHz layer deployments requiring stable component supply and long-term lifecycle support.
Supply support for A2V09H300-04NR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power through its acquisition of Freescale.
The A2V09H300-04NR3 belongs to the Airfast RF Power LDMOS family, engineered specifically for energy-efficient, thermally robust cellular infrastructure amplifiers operating in licensed sub-1 GHz spectrum.
FAQ
What is the maximum continuous drain voltage rating for the A2V09H300-04NR3?
The A2V09H300-04NR3 has a maximum drain-source voltage rating (VDSS) of +105 Vdc, with a minimum of –0.5 Vdc. This rating applies under all operating conditions and defines the absolute limit for safe DC bias application to the drain terminals (Pins 1 and 2) of the A2V09H300-04NR3.
Does the A2V09H300-04NR3 require external input matching networks?
No, the A2V09H300-04NR3 is internally input matched to 50 Ω across the 720–960 MHz band, as confirmed in the datasheet's "Functional Tests" section and Figure 2 test circuit. This eliminates the need for external input matching components, simplifying PCB layout and reducing bill-of-materials cost for the A2V09H300-04NR3.
What is the gate threshold voltage specification for both sides of the A2V09H300-04NR3?
The A2V09H300-04NR3 specifies identical gate threshold voltage (VGS(th)) for both carrier (Side A) and peaking (Side B) transistors: 1.3–2.3 Vdc (min–max) at VDS = 10 Vdc and ID = 90 μAdc (Side A) or 140 μAdc (Side B), per Table 5 of the official datasheet for the A2V09H300-04NR3.
How is thermal performance characterized for the A2V09H300-04NR3?
Thermal performance of the A2V09H300-04NR3 is quantified by junction-to-case thermal resistance (RθJC) of 0.34 °C/W, measured at 76 °C case temperature, 79 W avg. output, 48 Vdc, IDQA = 400 mA, VGSB = 1.2 Vdc, and 940 MHz - as documented in Table 2 of the A2V09H300-04NR3 datasheet.
Is the A2V09H300-04NR3 compatible with digital predistortion (DPD) systems?
Yes, the A2V09H300-04NR3 is explicitly designed for digital predistortion error correction systems, as stated in the "Features" section. Its low AM/PM distortion (–12.3° max), stable gain vs. temperature (0.004 dB/°C), and broadband linearity (–33.4 dBc ACPR) enable rapid DPD convergence and sustained ACLR compliance in deployed A2V09H300-04NR3-based PAs.
A2V09H300-04NR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- OM-780G-4L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 720MHz ~ 960MHz
- Gain:
- 19.7dB
- Voltage - Test:
- 48 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 400 mA
- Power - Output:
- 53dBm
- Voltage - Rated:
- 105 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- OM-780G-4L
A2V09H300-04NR3 FAQ
1.How can I place an order for A2V09H300-04NR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for A2V09H300-04NR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A2V09H300-04NR3 reliable?
The price and inventory of A2V09H300-04NR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A2V09H300-04NR3 is usually 5 days.
3.What payment methods are accepted for A2V09H300-04NR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A2V09H300-04NR3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for A2V09H300-04NR3?
A2V09H300-04NR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A2V09H300-04NR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A2V09H300-04NR3?
For technical support, including A2V09H300-04NR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A2V09H300-04NR3 requirements.
6.How does Aetrix verify that A2V09H300-04NR3 is sourced from the original manufacturer or authorized distributors?
All A2V09H300-04NR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A2V09H300-04NR3 meets industry standards.
7.What is the process for return or replacement of A2V09H300-04NR3?
All A2V09H300-04NR3 units undergo pre-shipment inspection (PSI). If there is an issue with A2V09H300-04NR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A2V09H300-04NR3 part is unused and in its original packaging.
Return procedure for A2V09H300-04NR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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