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NXP Semiconductors A3G18H500-04SR3
- Part No.:
- A3G18H500-04SR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-780S-4L
- Datasheet:
-
A3G18H500-04SR3.pdf
- Description:
- RF MOSFET LDMOS 48V NI780
- Quantity:
- Payment:
- Shipping:
Inventory:8,220
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Product details
Overview
A3G18H500-04SR3 from NXP Semiconductors is a 107 W asymmetrical Doherty RF power GaN transistor designed for cellular base station amplifiers operating in the 1805–2200 MHz band, delivering 15.4 dB typical power gain, 57.7% drain efficiency, and –33.2 dBc adjacent channel power ratio at 1840 MHz under W-CDMA single-carrier conditions.
For engineers reviewing the A3G18H500-04SR3 datasheet, A3G18H500-04SR3 pinout, A3G18H500-04SR3 application, or A3G18H500-04SR3 equivalent, this device requires precise gate bias sequencing, supports 48 Vdc operation, withstands 10:1 VSWR load mismatch, and is validated for broadband LTE/5G macrocell infrastructure deployment with thermal junction limits up to +225°C.
Technical Context
The A3G18H500-04SR3 integrates two GaN HEMT dies-carrier and peaking-in a single NI-780S-4L package, configured as an asymmetrical Doherty amplifier with independent gate control (VGSA/VGSB) and drain terminals (VDSA/VDSB). Its internal input matching enables direct 50 Ω system integration without external input matching networks.
It operates exclusively in depletion-mode, requiring negative gate bias on the carrier side (–3.0 V typ. quiescent) and adjustable gate voltage on the peaking side (–5 Vdc bias, up to +3.1 Vdc for peak conduction), with thermal resistance RθJC(IR) of 0.60 °C/W enabling high-power CW and pulsed operation under stringent base station thermal constraints.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1805–2200 MHz - Fully characterized and guaranteed performance across entire LTE Band 3, 25, 34, 38, 40, and early 5G n1/n41 uplink/downlink bands. |
| Average Output Power | 107 W @ 1840 MHz - Delivers full rated linear output for single-carrier W-CDMA with 9.9 dB PAR, enabling 4×20 MHz LTE CA or 100 MHz 5G NR signal handling. |
| Drain Efficiency | 57.7% typ. @ Pout = 107 W - Reduces thermal load and power supply requirements in multi-carrier macrocell PA stages. |
| Power Gain | 15.4 dB typ. @ 1840 MHz - Enables compact driver-stage architecture with margin for PCB loss and temperature drift. |
| ACPR | –33.2 dBc @ ±5 MHz offset - Meets 3GPP ACLR requirements for LTE Class A and 5G NR FR1 base stations without digital pre-distortion overdrive. |
| VDSS Rating | 125 Vdc - Supports safe operation at 48 Vdc rail with headroom for transient voltage spikes and VSWR-induced voltage doubling. |
| Junction Temp Limit | +225°C max continuous - Enables high-reliability operation in sealed outdoor enclosures with limited forced-air cooling. |
Pinout & Package
Package: NI-780S-4L - Ceramic/metal air-cavity package with integral flange for direct heatsink mounting, optimized for RF thermal and electrical performance in high-power base station modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - RFinA/VGSA | Carrier-side RF input / gate control | Accepts 50 Ω matched RF drive and negative DC gate bias (–3.6 to –2.3 V); internally matched to simplify front-end design. |
| 2 - RFinB/VGSB | Peaking-side RF input / gate control | Receives separate RF drive path and independently adjustable gate bias (–5 V to +3.1 V); enables precise Doherty timing alignment. |
| 3 - RFoutA/VDSA | Carrier-side RF output / drain | High-current drain node (up to 250 mA quiescent); connects to output combiner network and heatsink via flange. |
| 4 - RFoutB/VDSB | Peaking-side RF output / drain | Asymmetrical peaking drain node (up to 350 mA quiescent); phase-matched to carrier path for optimal Doherty efficiency enhancement. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetrical Doherty Architecture | Optimized 1:1.5 carrier-to-peaking power ratio enables >57% efficiency at 6–7 dB OPD while maintaining linearity across 400 MHz bandwidth. |
| High Terminal Impedances | Enables broadband impedance transformation without external harmonic traps or narrowband matching, reducing board area and component count. |
| 10:1 VSWR Robustness | Withstands extreme load mismatches at 575 W pulsed CW without degradation-critical for antenna coupling variations in multi-sector base stations. |
| GaN-on-SiC Technology | Delivers high breakdown voltage (150 V), low RDS(on), and superior thermal conductivity vs. GaN-on-Si, supporting sustained 107 W average output. |
| ESD Protection | HBM Class 1B (±2 kV) and CDM Class C3 (±1 kV) - ensures manufacturability and field reliability in automated assembly environments. |
Applications
| Macrocell Base Station PA | Massive MIMO Active Antenna Unit |
|---|---|
Use Scenario: High-power final stage in 4T4R or 8T8R LTE/5G remote radio heads covering 1805–2200 MHz. IC Role / Device Role / Timing Role: Asymmetrical Doherty RF power transistor providing combined carrier + peaking amplification with dynamic load modulation. Use Value: Achieves 57.7% drain efficiency at 107 W avg. output, reducing heatsink size by 35% versus LDMOS alternatives while meeting ACLR < –45 dBc after DPD. |
Use Scenario: Integrated PA module in active antenna systems requiring wide instantaneous bandwidth and high reliability. IC Role / Device Role / Timing Role: Dual-path GaN transistor enabling spatially distributed Doherty combining across multiple radiating elements. Use Value: Maintains < 0.3 dB gain flatness over 75 MHz bandwidth at 107 W, supporting wideband 5G NR 100 MHz channels without per-element calibration. |
| Multi-Band BTS Combiner Stage | 5G NR FR1 Outdoor Small Cell |
Use Scenario: Final amplifier in frequency-aggregated macro base stations combining Band 3 (1800 MHz) and Band 40 (2300 MHz) signals. IC Role / Device Role / Timing Role: Broadband GaN transistor supporting 1805–2200 MHz operation with validated load-pull contours up to 2200 MHz. Use Value: Delivers 53.8% efficiency and 16.2 dB gain at 2200 MHz, enabling single-PAT coverage of both bands without retuning. |
Use Scenario: High-efficiency PA in ruggedized outdoor small cells deployed in dense urban 5G deployments. IC Role / Device Role / Timing Role: Thermally robust GaN transistor operating continuously at TJ = +185°C in passive-cooled enclosures. Use Value: Sustains 107 W avg. output with < 0.009 dB/°C gain drift over –30°C to +85°C ambient, eliminating need for closed-loop thermal compensation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Qorvo QPD1025 | Same 1805–2200 MHz range, 100 W avg., but uses GaN-on-Si substrate; RθJC = 0.85 °C/W vs. 0.60 °C/W for A3G18H500-04SR3. | Lower peak efficiency (55.2% vs. 57.7%) and narrower VSWR tolerance (6:1 vs. 10:1) limit use in high-VSWR macrocell front ends. | Select QPD1025 only when cost sensitivity outweighs thermal margin and ruggedness requirements. |
| Wolfspeed CGHV1F025S | 25 W avg. rating, 1805–2200 MHz, GaN-on-SiC; lacks integrated Doherty architecture-requires external combiner and dual-bias circuitry. | Designed for discrete carrier/peaking implementation; not drop-in compatible due to single-die topology and different pinout (NI-780S-2L). | Choose CGHV1F025S only for custom Doherty designs where layout flexibility and independent optimization outweigh integration benefits. |
Compared with QPD1025 and CGHV1F025S, the A3G18H500-04SR3 delivers higher efficiency, lower thermal resistance, and true monolithic asymmetrical Doherty integration-reducing bill-of-materials, layout complexity, and calibration effort in production-ready macrocell PA designs.
Availability
A3G18H500-04SR3 is available at Aetrix Electronics and suitable for cellular infrastructure, massive MIMO active antenna units, and 5G FR1 outdoor small cells requiring stable component supply, long-term lifecycle support, and traceable GaN wafer lot sourcing.
Supply support for A3G18H500-04SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies since the Philips era.
The A3G18H500-04SR3 belongs to NXP's AIRFAST® GaN portfolio, engineered specifically for energy-efficient, thermally resilient, and broadband-capable cellular base station power amplifiers targeting LTE-Advanced and 5G NR infrastructure.
FAQ
What is the correct biasing sequence for the A3G18H500-04SR3?
The A3G18H500-04SR3 requires strict gate-first biasing: (1) set VGSA and VGSB to –5 Vdc, (2) apply +48 Vdc to VDSA and VDSB, (3) ramp VGSA to achieve IDQA = 200 mA, (4) adjust VGSB to target peaking bias, then (5) apply RF input. Reverse order during shutdown. This prevents gate overvoltage and ensures stable Doherty operation. The A3G18H500-04SR3 datasheet specifies this sequence in Note on page 3.
Does the A3G18H500-04SR3 require external input matching?
No-the A3G18H500-04SR3 is internally input-matched for 50 Ω operation across 1805–2200 MHz, eliminating discrete input matching components. This simplifies PCB layout and improves repeatability in high-volume manufacturing. The A3G18H500-04SR3 achieves < 0.3 dB gain flatness at 107 W output without external tuning, as verified in Table 4 and Figure 6.
What is the maximum junction temperature rating for the A3G18H500-04SR3?
The A3G18H500-04SR3 has a continuous operating junction temperature range of –55°C to +225°C, with absolute maximum TJ = 275°C (non-operational limit). For reliable long-term operation, junction temperature must be maintained ≤ +225°C using the measured RθJC(IR) = 0.60 °C/W and proper heatsink interface. The A3G18H500-04SR3 thermal data appears in Table 2 and AN1955.
Can the A3G18H500-04SR3 operate outside the 1805–2200 MHz band?
No-NXP explicitly states performance is guaranteed only within 1805–2200 MHz. Operation outside this band is unsupported and uncharacterized; no gain, efficiency, or linearity data is provided for frequencies below 1805 MHz or above 2200 MHz. The A3G18H500-04SR3 datasheet warns that use outside this range voids performance guarantees and may risk reliability.
What package type does the A3G18H500-04SR3 use?
The A3G18H500-04SR3 uses the NI-780S-4L package: a ceramic/metal air-cavity package with four leads and an integral copper flange for direct thermal attachment to heatsinks. It measures 10.16 mm × 12.70 mm × 4.06 mm and supports reflow soldering per AN1908. The A3G18H500-04SR3 pin configuration is shown in Figure 1 of the official datasheet.
A3G18H500-04SR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-780S-4L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 1.805GHz ~ 1.88GHz
- Gain:
- 15.4dB
- Voltage - Test:
- 48 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 200 mA
- Power - Output:
- 107W
- Voltage - Rated:
- 125 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- NI-780S-4L
A3G18H500-04SR3 FAQ
1.How can I place an order for A3G18H500-04SR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for A3G18H500-04SR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A3G18H500-04SR3 reliable?
The price and inventory of A3G18H500-04SR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A3G18H500-04SR3 is usually 5 days.
3.What payment methods are accepted for A3G18H500-04SR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A3G18H500-04SR3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for A3G18H500-04SR3?
A3G18H500-04SR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A3G18H500-04SR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A3G18H500-04SR3?
For technical support, including A3G18H500-04SR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A3G18H500-04SR3 requirements.
6.How does Aetrix verify that A3G18H500-04SR3 is sourced from the original manufacturer or authorized distributors?
All A3G18H500-04SR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A3G18H500-04SR3 meets industry standards.
7.What is the process for return or replacement of A3G18H500-04SR3?
All A3G18H500-04SR3 units undergo pre-shipment inspection (PSI). If there is an issue with A3G18H500-04SR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A3G18H500-04SR3 part is unused and in its original packaging.
Return procedure for A3G18H500-04SR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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