NXP Semiconductors A3G20S350-01SR3

Overview

A3G20S350-01SR3 from NXP Semiconductors is a 59 W average RF power GaN HEMT transistor designed for cellular base station power amplifiers operating in the 2110–2170 MHz band. It delivers 18.1 dB typical power gain, 37.0% drain efficiency, and –32.3 dBc ACPR at 59 W avg. output under W-CDMA signal conditions with 9.9 dB PAR. Its NI-400S-2SA air-cavity package supports high-power Doherty amplifier architectures.

For engineers reviewing the A3G20S350-01SR3 datasheet, A3G20S350-01SR3 pinout, A3G20S350-01SR3 application, or A3G20S350-01SR3 equivalent, key selection criteria include guaranteed 2110–2170 MHz band performance, GaN depletion-mode biasing sequence compliance, thermal resistance R_θJC = 0.64 °C/W, and input-matched 50 Ω interface for rapid integration into macrocell PA stages.

Technical Context

The A3G20S350-01SR3 is a depletion-mode GaN-on-SiC HEMT optimized for digital predistortion (DPD)-enabled Doherty PAs in LTE/5G FDD base stations. It operates at V_DD = 48 Vdc with I_DQ = 500 mA quiescent current and exhibits 0.2 dB gain flatness over 60 MHz bandwidth at 59 W avg. output.

Its design incorporates high terminal impedances to simplify broadband matching and integrates ESD protection rated Class 1B (HBM) and C3 (CDM). The device's channel temperature limit of 275 °C and case temperature range of –55 to +150 °C enable robust operation in thermally constrained outdoor macrocell enclosures.

Key Specifications

Pinout & Package

Package: NI-400S-2SA - hermetically sealed air-cavity ceramic/metal package with solderable baseplate, optimized for >100 W RF power dissipation and low-inductance grounding.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with CGHV1J006S and AFGA300004, the A3G20S350-01SR3 provides 47% higher avg. output power and 1.5% higher efficiency in the 2110–2170 MHz band, making it optimal for macrocell deployments where spectral efficiency and thermal density are critical.

Availability

A3G20S350-01SR3 is available at Aetrix Electronics and suitable for cellular infrastructure, macrocell base station development, and remote radio head production requiring stable component supply and long-term lifecycle assurance.

Supply support for A3G20S350-01SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with headquarters in Eindhoven, Netherlands.

The A3G20S350-01SR3 belongs to NXP's AIRFAST RF Power portfolio, engineered specifically for high-efficiency, high-reliability cellular infrastructure amplifiers operating in licensed sub-6 GHz bands.

FAQ

What is the correct biasing sequence for the A3G20S350-01SR3?

The A3G20S350-01SR3 is a depletion-mode GaN transistor requiring strict bias sequencing: first apply –5 V to V_GS, then ramp V_DS to +48 V, then adjust V_GS to achieve 500 mA I_DQ, and finally apply RF input. Reversing this risks catastrophic failure. This sequence is documented in the A3G20S350-01SR3 datasheet Section "Correct Biasing Sequence for GaN Depletion Mode Transistors".

Does the A3G20S350-01SR3 require external input matching?

No, the A3G20S350-01SR3 is internally input-matched to 50 Ω as stated in Table 5 footnote and confirmed in functional test conditions. This eliminates discrete input matching components in standard 50 Ω test fixtures and simplifies layout in production PA modules, though output matching remains application-specific.

What is the maximum channel temperature rating for the A3G20S350-01SR3?

The A3G20S350-01SR3 has a maximum channel temperature (T_CH) rating of 275 °C, as specified in Table 1 Maximum Ratings. Operation at this temperature reduces median time to failure; reliability modeling uses T_CH with MTTF = 10^{[–10.3 + 8263/(T + 273)]} hours, where T is channel temperature in °C.

Is the A3G20S350-01SR3 suitable for 5G NR applications outside the 2110–2170 MHz band?

No - the A3G20S350-01SR3 is characterized and performance-guaranteed only for 2110–2170 MHz. The datasheet explicitly states "no guarantee of performance" outside this band. For 5G NR n41 (2496–2690 MHz) or n77/n78 bands, alternative NXP AIRFAST devices such as A3G25S350-01SR3 must be selected.

What ESD protection class does the A3G20S350-01SR3 meet?

The A3G20S350-01SR3 meets Human Body Model (HBM) Class 1B per JS-001-2017 and Charge Device Model (CDM) Class C3 per JS-002-2014, as verified in Table 3. These ratings support safe handling during assembly but do not eliminate need for proper ESD protocols in PCB assembly and PA module integration.