NXP Semiconductors A3G26D055N-100

Overview

A3G26D055N from NXP Semiconductors is a symmetrical Doherty RF power amplifier based on GaN-on-SiC technology, designed for cellular base station transmit paths. It delivers 8 W average RF output power across 100–2690 MHz, achieves 54.1% drain efficiency at 2675 MHz, and supports wide instantaneous bandwidth with robust 400 MHz ISBW ruggedness under 55 Vdc and 17.4 W modulated output.

For engineers reviewing the A3G26D055N datasheet, A3G26D055N pinout, A3G26D055N application, or A3G26D055N equivalent, this page provides verified performance data, thermal design guidance, bias sequencing, package layout rules, and validated alternatives for 5G massive MIMO active antenna systems.

Technical Context

The A3G26D055N implements a two-path symmetrical Doherty architecture with separate carrier (Side A) and peaking (Side B) transistors, both GaN HEMTs. It operates in depletion mode requiring negative gate bias (VGSB = –4.9 Vdc typical), with independent gate control and shared 48 Vdc drain supply.

Internally matched for 50 Ω systems, it features high terminal impedances optimized for broadband operation and supports analog or digital linearization. Its thermal design centers on a low RθJC (IR) of 3.7 °C/W, enabling high-power density mounting on thermally enhanced PCBs per NXP's DFN 7 × 6.5 layout guidelines.

Key Specifications

Pinout & Package

Package: DFN 7 mm × 6.5 mm, exposed thermal pad, surface-mount, moisture sensitivity level 3 (peak reflow 260°C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with QPA9807, A3G26D055N offers broader frequency coverage and +2.4 W output; compared with A3G26D045N, it delivers +2.4 W avg. power in identical footprint while requiring only minor thermal redesign due to higher RθJC margin.

Availability

A3G26D055N is available at Aetrix Electronics and suitable for 5G massive MIMO active antennas, macro base station remote radio heads, and fixed wireless access units requiring stable component supply, long-term lifecycle assurance, and traceable GaN sourcing.

Supply support for A3G26D055N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The Airfast RF Power product line delivers GaN-based amplifiers engineered for cellular infrastructure, emphasizing broadband efficiency, ruggedness, and ease of linearization in active antenna systems.

FAQ

What is the recommended gate bias sequence for A3G26D055N?

The correct biasing sequence for A3G26D055N is: (1) set GSA and GSB to –5 V, (2) apply 48 Vdc to VDSA and VDSB, (3) increase GSA until IDQA = 40 mA, (4) adjust GSB to target bias (–4.9 Vdc), then (5) apply RF input. This prevents gate overstress and ensures stable Doherty operation. The A3G26D055N datasheet specifies this exact sequence in Section "Correct biasing sequence for GaN depletion mode amplifiers".

Does A3G26D055N support 700 MHz band operation?

Yes, A3G26D055N is characterized down to 700 MHz: Table 2 shows 19.2–20.0 dB gain, 40.6–41.7% drain efficiency, and –34.4 to –36.6 dBc ACPR at 750–810 MHz with 5.6 W avg. output. Performance is specified for Class AB Side A operation in this band, confirming usability in low-band 5G and LTE deployments. The A3G26D055N datasheet explicitly lists 100–2690 MHz as its guaranteed frequency range.

What thermal interface material is recommended for A3G26D055N?

NXP recommends soldering the A3G26D055N's EPAD directly to a copper thermal pad on the PCB using standard lead-free reflow profiles (MSL3, peak 260°C). No additional thermal interface material (TIM) is required or recommended - the DFN package is designed for direct metal-to-metal conduction. Thermal resistance RθJC (IR) = 3.7 °C/W assumes full EPAD solder coverage per Figure 5 layout guidelines. The A3G26D055N datasheet references AN1907 for reflow attach methodology.

Can A3G26D055N replace LDMOS PAs in existing base station designs?

A3G26D055N can replace LDMOS in many macro and small-cell designs, but requires gate bias redesign (negative vs. positive), updated thermal management (lower RθJC but higher channel temperature limit), and verification of RF matching networks. Its 48 Vdc operation matches common LDMOS supplies, and DFN 7 × 6.5 footprint allows mechanical drop-in in some layouts. However, the A3G26D055N datasheet states no guarantee of performance outside 100–2690 MHz, so legacy 800/900 MHz LDMOS replacements require validation.

What is the maximum channel temperature rating for A3G26D055N?

The maximum channel temperature (TCH) for A3G26D055N is 225°C, as specified in Table 5 (Limiting Values). This value is used with RθCHC (FEA) = 8.5 °C/W to estimate MTTF via MTTF = 10[–11.1 + 8366/(T + 273)], where T is channel temperature in °C. Operation above 225°C causes permanent damage. The A3G26D055N datasheet emphasizes that RθCHC (FEA) - not RθJC - must be used for reliability calculations involving TCH.