NXP Semiconductors A3G26D055N-1805

Overview

A3G26D055N-1805 from NXP Semiconductors is an 8 W symmetrical Doherty RF power GaN amplifier designed for cellular base station applications in the 100–2690 MHz band, delivering 18.2 dB power gain, 53.5% drain efficiency, and –28.2 dBc ACPR at 2595 MHz under W-CDMA modulation with 9.9 dB PAR.

For engineers reviewing the A3G26D055N-1805 datasheet, A3G26D055N-1805 pinout, A3G26D055N-1805 application, or A3G26D055N-1805 equivalent, this page provides verified technical context, package mapping to DFN 7 × 6.5 mm, thermal resistance (RθJC = 3.7 °C/W), ruggedness under 400 MHz ISBW at 55 Vdc, and bias sequencing guidance for GaN depletion-mode Doherty operation.

Technical Context

This GaN-on-SiC Doherty amplifier integrates carrier and peaking transistors in a single DFN package, operating in depletion mode with dual gate control (VGSA, VGSB) and common 48 V drain supply. It supports analog or digital linearization via high terminal impedances and broadband load-pull stability.

The device is internally matched for 50 Ω systems across 100–2690 MHz, characterized with NXP's reference circuit, and optimized for massive MIMO active antenna units requiring wide instantaneous bandwidth, high VSWR tolerance, and thermal robustness up to 150 °C case temperature.

Key Specifications

Pinout & Package

Package: DFN 7 mm × 6.5 mm, thermally enhanced plastic package with exposed thermal pad on underside. Pin configuration follows NXP reference layout per Figure 1; pin numbering is clockwise from top-left corner (pin 1) when viewed from top side.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with QPA9807 and A3G26D070N, the A3G26D055N-1805 delivers optimal balance of 8 W output, 53.5% efficiency, and proven ruggedness in massive MIMO AAUs-making it the preferred choice for mid-power 5G infrastructure where thermal management and VSWR resilience are critical.

Availability

A3G26D055N-1805 is available at Aetrix Electronics and suitable for 5G massive MIMO active antenna units, macro base station remote radio heads, and private network base stations requiring stable component supply, long-lifecycle support, and traceable GaN sourcing.

Supply support for A3G26D055N-1805 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The Airfast RF Power product line delivers GaN and LDMOS amplifiers engineered specifically for cellular infrastructure, emphasizing broadband performance, thermal robustness, and seamless integration into active antenna systems.

FAQ

What is the guaranteed frequency range for A3G26D055N-1805?

The A3G26D055N-1805 is fully characterized and performance-guaranteed across 100–2690 MHz. Operation outside this band is not validated, and NXP does not guarantee specifications such as gain, efficiency, or ACPR beyond these limits. The device is intended for cellular infrastructure use cases including Band 12/13/14 (700 MHz), Band 7 (2600 MHz), and extended low-band coverage.

Does A3G26D055N-1805 require external matching components?

No, the A3G26D055N-1805 is internally matched to 50 Ω across its entire 100–2690 MHz operating band. This eliminates the need for external input/output matching networks in most reference designs, though proper PCB layout-including controlled-impedance traces and ground plane integrity-is required to maintain specified RF performance and thermal behavior.

What is the recommended bias sequence for A3G26D055N-1805?

The A3G26D055N-1805 requires strict bias sequencing due to its GaN depletion-mode architecture. First set both VGSA and VGSB to –5 V, then apply 48 V to VDSA and VDSB. Next, increase VGSA until IDQA reaches 40 mA, then adjust VGSB to target bias (–4.9 Vdc). Reverse the order for shutdown: remove RF input, return gates to –5 V, discharge drains to 0 V, then disable gate bias. This prevents gate overvoltage and thermal runaway.

How is thermal management implemented for A3G26D055N-1805?

The A3G26D055N-1805 uses a DFN 7 × 6.5 mm package with an exposed thermal pad requiring full-solder attachment to a dedicated copper pour on the PCB. Its RθJC is 3.7 °C/W (IR-measured), meaning a 10 °C rise above ambient occurs at ~2.7 W dissipation. For 8 W average RF output, heatsink interface design must ensure case temperature remains ≤150 °C, especially under sustained high-PAR signal conditions.

Is A3G26D055N-1805 suitable for 5G NR FR1 applications?

Yes, the A3G26D055N-1805 supports all 5G NR FR1 bands from n1 through n79, including n77/n78/n79 (3300–5000 MHz downlink) via harmonic suppression and uplink coverage from 100–2690 MHz. Its 18.0–18.2 dB gain, –27.4 to –30.1 dBc ACPR, and 52.1–54.1% efficiency at 2515–2675 MHz meet 3GPP TR 38.803 linearity and spectral mask requirements for commercial 5G base stations.