NXP Semiconductors A3G26D055N-2110

Overview

A3G26D055N from NXP Semiconductors is an 8 W symmetrical Doherty RF power GaN amplifier designed for cellular base station applications in the 100–2690 MHz band. It delivers 18.2 dB power gain, 53.5% drain efficiency, and –28.2 dBc ACPR at 2595 MHz under W-CDMA signal conditions, optimized for massive MIMO active antenna systems in 5G infrastructure.

For engineers reviewing the A3G26D055N datasheet, A3G26D055N pinout, A3G26D055N application, or A3G26D055N equivalent, key selection criteria include broadband ruggedness (400 MHz ISBW), thermal resistance (3.7 °C/W), gate bias sequencing for GaN depletion-mode operation, and DFN 7 × 6.5 mm package compatibility with high-power RF PCB layout guidelines.

Technical Context

The A3G26D055N implements a symmetrical Doherty architecture with separate carrier (Side A) and peaking (Side B) GaN HEMT stages, enabling wide instantaneous bandwidth and high efficiency across multi-band LTE/5G deployments. Its internally matched 50 Ω input/output supports direct integration into reference circuits without external matching networks.

It operates as a depletion-mode GaN device requiring precise gate bias sequencing: VGSA/VGSB must be set to –5 V before applying VDD = 48 Vdc, followed by incremental gate voltage adjustment to achieve IDQA = 40 mA on the carrier side and target bias on the peaking side. This ensures stable operation under high VSWR and broadband modulated signal conditions.

Key Specifications

Pinout & Package

Package: DFN 7 mm × 6.5 mm with exposed thermal pad; RoHS-compliant, moisture sensitivity level 3 (260 °C peak reflow).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with A3G26D055N, A3G26D045N offers identical form factor and bandwidth at reduced power and thermal load, while AFGA30000 provides higher output but sacrifices bandwidth flexibility and increases PCB area - making A3G26D055N optimal for scalable, wideband 5G active antenna designs.

Availability

A3G26D055N is available at Aetrix Electronics and suitable for 5G massive MIMO active antenna units, macro base station remote radio heads, and multi-band LTE infrastructure requiring stable component supply, long lifecycle support, and traceable GaN sourcing.

Supply support for A3G26D055N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The Airfast RF Power product line delivers GaN-based amplifiers engineered specifically for cellular infrastructure, emphasizing wide instantaneous bandwidth, high efficiency, and ruggedness in demanding base station environments.

FAQ

What is the recommended gate bias sequence for A3G26D055N during power-up?

The correct biasing sequence for A3G26D055N is: (1) Set VGSA and VGSB to –5 Vdc; (2) Apply VDDA and VDSB at +48 Vdc; (3) Increase VGSA until IDQA = 40 mA is reached; (4) Adjust VGSB to target bias voltage (–4.9 Vdc typical); (5) Apply RF input. This prevents gate overvoltage and ensures stable Doherty operation. The A3G26D055N datasheet specifies this exact sequence in Section "Correct biasing sequence for GaN depletion mode amplifiers".

Does A3G26D055N support operation outside the 100–2690 MHz band?

No, A3G26D055N performance is characterized and guaranteed only within the 100–2690 MHz frequency range. The datasheet explicitly states there is no guarantee of performance when used outside this band. Operation below 100 MHz or above 2690 MHz may result in degraded gain, efficiency, or linearity, and is not validated by NXP. All published specifications for A3G26D055N apply strictly within its rated band.

What is the maximum channel temperature rating for A3G26D055N?

The maximum channel temperature (TCH) for A3G26D055N is 225 °C, as specified in Table 5 (Limiting Values) of the datasheet. This value defines the absolute thermal limit for reliable operation. For reliability modeling, the finite element analysis thermal resistance RθCHC (FEA) = 8.5 °C/W must be used, and MTTF estimation uses TCH in the formula MTTF = 10[–11.1 + 8366/(TCH + 273)]. Exceeding 225 °C risks permanent degradation of the GaN HEMT structure in A3G26D055N.

Is A3G26D055N pin-compatible with other Airfast DFN-packaged amplifiers like A3G26D045N?

Yes, A3G26D055N shares the same DFN 7 × 6.5 mm package and identical 34-pin configuration with A3G26D045N, including matching pin functions for VDDA, VDSB, VGSA, VGSB, IN, OUT, and ground. Both devices follow identical PCB design guidelines (solder mask opening, I/O pads, stencil pattern) per Figures 5–7 in the A3G26D055N datasheet. This allows drop-in replacement in existing layouts when upgrading from A3G26D045N to A3G26D055N for higher output power.

What ESD protection class does A3G26D055N meet?

A3G26D055N meets Human Body Model (HBM) Class 1B (≥1 kV) and Charge Device Model (CDM) Class C3 (≥1 kV) per JS-001-2017 and JS-002-2014 standards, as documented in Table 8 of the datasheet. These ratings reflect robust on-chip ESD structures suitable for standard handling in automated assembly lines. However, due to its GaN process, A3G26D055N still requires strict adherence to anti-static protocols during manual PCB rework or evaluation - especially at gate terminals where VGS limits are ±8 Vdc.