NXP Semiconductors A3G26D055N-2400

Overview

A3G26D055N from NXP Semiconductors is an 8 W symmetrical Doherty RF power GaN amplifier designed for cellular base station applications in the 100–2690 MHz band, featuring 52.1% drain efficiency at 2515 MHz, 18.0 dB power gain, and –27.4 dBc ACPR under W-CDMA signal conditions. It operates at 48 Vdc with 40 mA quiescent current on the carrier side and supports massive MIMO active antenna systems for 5G infrastructure.

For engineers reviewing the A3G26D055N datasheet, A3G26D055N pinout, A3G26D055N application, or A3G26D055N equivalent, this page delivers verified specifications, thermal performance data, ruggedness metrics, biasing sequence guidance, and package-level PCB layout requirements for high-reliability RF front-end design.

Technical Context

The A3G26D055N implements a symmetrical Doherty architecture with separate carrier (Side A) and peaking (Side B) GaN HEMT stages, enabling broadband linearization across 100–2690 MHz. Its depletion-mode GaN process requires precise gate bias sequencing: VGSA/VGSB must be set to –5 V before applying VDD = 48 Vdc, then adjusted to achieve IDQA = 40 mA and target peaking bias.

Thermal management relies on low RθJC (IR) = 3.7 °C/W from die surface to case, validated via infrared measurement at 123°C case temperature and 8.3 W dissipation. The device sustains 17.4 W avg. modulated output power over 400 MHz instantaneous bandwidth at 55 Vdc without degradation, confirming wideband ruggedness under AWGN excitation with 10 dB PAR.

Key Specifications

Pinout & Package

Package: DFN 7 mm × 6.5 mm, thermally enhanced plastic package with exposed thermal pad on underside. Designed for solder reflow attachment per AN1907; requires specific solder mask opening, I/O pad geometry, and stencil design per Figures 5–7.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with A3G26D055N, A3G26D050N offers identical form factor and bias compatibility at reduced power, while AFGA30001 provides higher raw output at the cost of integration, layout complexity, and thermal management overhead.

Availability

A3G26D055N is available at Aetrix Electronics and suitable for 5G massive MIMO active antenna units, macrocell remote radio heads, and fixed wireless access base stations requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for A3G26D055N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The A3G26D055N belongs to the Airfast RF Power product line, engineered specifically for energy-efficient, broadband, high-linearity cellular infrastructure applications including 5G NR base stations and active antenna systems.

FAQ

What is the recommended gate bias sequence for A3G26D055N?

The correct biasing sequence for A3G26D055N requires setting both VGSA and VGSB to –5 V first, then applying VDD = 48 Vdc to both drains, followed by increasing VGSA to achieve IDQA = 40 mA, then adjusting VGSB to its target voltage before applying RF input. This sequence prevents gate overvoltage and ensures stable Doherty operation. Deviating from this order risks permanent damage to the GaN HEMTs inside A3G26D055N.

Does A3G26D055N support operation outside the 100–2690 MHz band?

No, A3G26D055N performance is characterized and guaranteed only within the 100–2690 MHz frequency band. The datasheet explicitly states there is no guarantee of performance when A3G26D055N is used outside this range. Operation at frequencies such as 3.5 GHz (CBRS) or 3.7 GHz (n77) is unsupported and may result in degraded gain, efficiency, or reliability.

What thermal interface requirements apply to A3G26D055N's DFN package?

A3G26D055N requires full-solder attachment of its exposed thermal pad to a solid copper area ≥100 mm² on the PCB, with ≥12 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to internal ground planes. The RθJC (IR) = 3.7 °C/W rating assumes this interface; failure to meet it risks exceeding the 150°C case temperature limit and triggering thermal shutdown or accelerated degradation of A3G26D055N.

How does A3G26D055N handle high VSWR conditions?

A3G26D055N is specifically designed to withstand extremely high output VSWR across its operating band, a key requirement for base station PAs exposed to antenna detuning or environmental mismatches. Its GaN process and symmetrical Doherty topology provide inherent ruggedness, validated by wideband ruggedness testing showing no degradation at 17.4 W avg. output into mismatched loads. This behavior is intrinsic to A3G26D055N's architecture and not dependent on external protection circuits.

Is A3G26D055N pin-compatible with other Airfast DFN devices like A3G26D050N?

Yes, A3G26D055N shares identical DFN 7 × 6.5 mm package dimensions, pin configuration, and thermal pad layout with A3G26D050N, enabling drop-in replacement in existing designs where power requirements allow. Both devices use the same bias sequencing, mounting guidelines, and PCB footprint per Figures 3–8 in the A3G26D055N datasheet, making A3G26D055N a direct upgrade path for systems needing higher output power without layout changes.