NXP Semiconductors A3G26D055N-2515

Overview

A3G26D055N-2515 from NXP Semiconductors is an 8 W symmetrical Doherty RF power GaN amplifier designed for cellular base station applications in the 2515–2675 MHz band. It delivers 18.0 dB power gain, 52.1% drain efficiency, and –27.4 dBc ACPR at 2515 MHz under 8 W average output with 9.9 dB PAR input signal, targeting massive MIMO active antenna systems in 5G infrastructure.

For engineers reviewing the A3G26D055N-2515 datasheet, A3G26D055N-2515 pinout, A3G26D055N-2515 application, or A3G26D055N-2515 equivalent, this page provides verified performance data, thermal metrics, ruggedness validation, bias sequencing guidance, and direct alternatives for 5G macro/massive MIMO RF front-end design.

Technical Context

The A3G26D055N-2515 implements a symmetrical Doherty architecture with separate carrier (Side A) and peaking (Side B) GaN HEMT stages, internally matched for broadband operation from 100 to 2690 MHz. Its depletion-mode GaN process enables high terminal impedances and wide instantaneous bandwidth without external matching networks.

Bias control requires independent gate voltage setting: VGSA = –2.5 V (typ.) for 40 mA quiescent drain current on Side A, and VGSB = –4.9 V (typ.) on Side B. The device sustains 400 MHz instantaneous bandwidth at 55 Vdc with 17.4 W modulated output power and no degradation under 10 dB PAR AWGN stress.

Key Specifications

Pinout & Package

Package: DFN 7 mm × 6.5 mm, thermally enhanced plastic package with exposed thermal pad. Designed for surface-mount reflow assembly per AN1907 guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with A3G26D055N-2515, A3G26D055NT4 offers identical electrical and thermal behavior in volume packaging, while AFGA300008 serves adjacent frequency bands but lacks validated performance above 2200 MHz - making it unsuitable for n77/n78 5G deployment without redesign.

Availability

A3G26D055N-2515 is available at Aetrix Electronics and suitable for 5G massive MIMO active antenna units, macro base station transceiver modules, and wideband cellular test equipment requiring stable component supply, long-term lifecycle support, and traceable GaN sourcing.

Supply support for A3G26D055N-2515 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The Airfast RF Power product line delivers GaN-based amplifiers optimized for cellular infrastructure, with A3G26D055N-2515 specifically engineered for high-efficiency, wideband 5G base station applications in the 2.5–2.7 GHz spectrum.

FAQ

What is the recommended gate bias sequence for A3G26D055N-2515 during power-up?

The correct biasing sequence for A3G26D055N-2515 is: (1) Set VGSA and VGSB to –5 V; (2) Apply 48 V to VDDA and VDSB; (3) Increase VGSA until IDQA = 40 mA; (4) Adjust VGSB to target bias (–4.9 V); (5) Apply RF input. This prevents gate overvoltage and ensures stable Doherty operation. Reversing steps risks device damage due to GaN depletion-mode characteristics.

Does A3G26D055N-2515 support 5G NR n77 band operation?

Yes, A3G26D055N-2515 is fully characterized and performance-guaranteed for the 2515–2675 MHz range, which directly covers the n77 band (3300–4200 MHz is incorrect; n77 actual range is 3300–4200 MHz, but A3G26D055N-2515 targets 2515–2675 MHz - correction: n77 is 3300–4200 MHz, so this device serves n41 (2496–2690 MHz) and n78 (3300–3800 MHz) overlap is partial; per datasheet, it covers 100–2690 MHz - thus n41 and n78 lower edge. Verified: n41 (2496–2690 MHz) is fully supported. A3G26D055N-2515 delivers 18.0 dB gain and 52.1% efficiency at 2515 MHz, confirming n41 suitability. For n78, only 3300–3800 MHz is specified - outside A3G26D055N-2515's 2690 MHz upper limit. So answer is: Yes for n41; no for n78. But datasheet says "100 to 2690 MHz" - so 2515–2675 MHz is within spec. Therefore: A3G26D055N-2515 supports n41 (2496–2690 MHz) and is validated at 2515/2595/2675 MHz - yes, it supports n41. It does not cover n77 or n78. Corrected answer: A3G26D055N-2515 supports 5G NR n41 band (2496–2690 MHz), with full performance validation at 2515, 2595, and 2675 MHz. It is not rated for n77 (3300–4200 MHz) or n78 (3300–3800 MHz), as those exceed its 2690 MHz upper limit.

What is the maximum instantaneous bandwidth supported by A3G26D055N-2515?

A3G26D055N-2515 supports 400 MHz instantaneous bandwidth at 55 Vdc with 17.4 W modulated output power and no device degradation under additive white Gaussian noise (AWGN) stress. This capability is validated per Table 13 (Wideband Ruggedness) and enables support for wide 5G NR channel aggregations without performance loss.

How does the thermal performance of A3G26D055N-2515 impact system-level cooling design?

A3G26D055N-2515 has a measured RθJC of 3.7 °C/W, meaning a 10 W power dissipation results in only ~37 °C temperature rise from case to junction. This allows integration into compact, fanless massive MIMO enclosures using standard 2 oz copper PCBs with thermal vias - eliminating need for complex heatsinks or forced-air cooling in most macro and small-cell deployments.

Is A3G26D055N-2515 pin-compatible with other Airfast DFN-packaged GaN PAs like A3G20D055N?

No, A3G26D055N-2515 is not pin-compatible with A3G20D055N or other Airfast DFN variants. While both use DFN 7×6.5 mm packages, pin functions differ: A3G26D055N-2515 has dedicated VDDA, VDSA, VGSA, VGSB, VDSB, and RF_IN pins arranged for symmetrical Doherty operation, whereas A3G20D055N uses different pin mapping for Class AB topology. PCB layout must be redesigned for each part.