NXP Semiconductors A3G26D055N-2600

Overview

A3G26D055N-2600 from NXP Semiconductors is an 8 W symmetrical Doherty RF power GaN amplifier optimized for cellular base station transmitters operating in the 2515–2675 MHz band. It delivers 18.0–18.2 dB power gain, 52.1–54.1% drain efficiency, and –27.4 to –30.1 dBc ACPR at 8 W average output under W-CDMA signal conditions. Its design targets massive MIMO active antenna systems in 5G macro base stations.

For engineers reviewing the A3G26D055N-2600 datasheet, A3G26D055N-2600 pinout, A3G26D055N-2600 application, or A3G26D055N-2600 equivalent, this page provides verified performance data at 2600 MHz, thermal resistance (RθJC = 3.7 °C/W), ruggedness under 400 MHz ISBW at 55 Vdc, and biasing sequence guidance for GaN depletion-mode Doherty operation.

Technical Context

The A3G26D055N-2600 implements a symmetrical Doherty architecture with separate carrier (Side A) and peaking (Side B) GaN HEMT stages, internally matched for broadband 50 Ω operation across 100–2690 MHz. It requires dual gate bias control: VGSA ≈ –2.5 V (to set IDQA = 40 mA) and VGSB ≈ –4.9 V (peaking threshold).

Its thermal design centers on a low RθJC of 3.7 °C/W (IR-measured), enabling high-power operation up to TC = 150 °C. The device sustains 17.4 W avg. modulated output under 400 MHz instantaneous bandwidth with no degradation, confirming robust wideband ruggedness per NXP reference circuit validation.

Key Specifications

Pinout & Package

Package: DFN 7 mm × 6.5 mm, thermally enhanced plastic package with exposed thermal pad (bottom-side solderable). Designed for high-power RF PCB layouts requiring controlled impedance and thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with A3G26D055N-2600, A3G26D045N trades 3.5 W output and ~2.5% efficiency for reduced thermal load and cost, while QPA9807 offers comparable performance at 28 V with distinct biasing and packaging-neither is pin-compatible, requiring layout and power delivery redesign.

Availability

A3G26D055N-2600 is available at Aetrix Electronics and suitable for 5G massive MIMO active antenna units, macro base station transmitters, and wideband cellular infrastructure requiring stable component supply, long-term lifecycle support, and traceable GaN sourcing.

Supply support for A3G26D055N-2600 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The Airfast RF Power product line delivers GaN and LDMOS amplifiers engineered specifically for cellular infrastructure-emphasizing efficiency, linearity, ruggedness, and thermal performance in macro, small cell, and active antenna applications.

FAQ

What is the guaranteed frequency range for A3G26D055N-2600 performance?

The A3G26D055N-2600 is characterized and performance-guaranteed for operation between 2515 MHz and 2675 MHz, with full datasheet specifications covering 100–2690 MHz. Performance outside 2515–2675 MHz is not guaranteed per NXP Rev. 3 datasheet, and use beyond 2690 MHz may result in degraded gain, efficiency, or linearity. The A3G26D055N-2600 must be operated within its validated band for compliance with 3GPP spectral masks and thermal limits.

What are the recommended gate bias voltages for A3G26D055N-2600 in Doherty mode?

For A3G26D055N-2600, the recommended gate bias sequence sets VGSA to –2.5 V (typical) to achieve IDQA = 40 mA on the carrier side, and VGSB to –4.9 Vdc on the peaking side. Both are depletion-mode GaN HEMTs, so negative gate voltage is required for quiescent operation. The datasheet specifies VGS(th) = –2.7 V (typ), and exceeding –8 Vdc on either gate risks permanent damage. Always follow the 5-step ON/OFF bias sequencing to prevent gate overstress.

Does A3G26D055N-2600 require external matching components at 2600 MHz?

No, the A3G26D055N-2600 is internally matched to 50 Ω at both input and output across its operational band, including 2515–2675 MHz. NXP's reference circuit uses only DC blocking capacitors and bias chokes-no external RF matching networks are needed. This reduces PCB footprint, eliminates tuning variability, and improves repeatability in high-volume manufacturing of 5G base station RF modules containing the A3G26D055N-2600.

What thermal interface requirements apply to A3G26D055N-2600?

The A3G26D055N-2600 has an IR-measured thermal resistance RθJC of 3.7 °C/W from active die surface to case, requiring a low-thermal-resistance interface (e.g., metal-core PCB or copper slug) to maintain TC ≤ 150 °C at full 8 W avg. output. The DFN 7×6.5 mm package uses an exposed bottom thermal pad that must be fully soldered to a dedicated copper pour with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) per NXP AN1907 guidelines for the A3G26D055N-2600.

How does A3G26D055N-2600 support digital pre-distortion (DPD)?

The A3G26D055N-2600 supports DPD through low AM/PM distortion (≤ –2.5°), flat gain response (0.8 dB over 160 MHz), and consistent ACPR (–27.4 to –30.1 dBc) across its 2600 MHz band-enabling effective linearization with standard DPD algorithms. Its symmetrical Doherty architecture and high intrinsic linearity reduce DPD complexity versus Class AB alternatives. NXP provides .s2p files and application notes (e.g., AN1955) to aid DPD modeling for the A3G26D055N-2600.