NXP Semiconductors A3G26H200W17SR3

Overview

A3G26H200W17SR3 from NXP Semiconductors is a 34 W average asymmetrical Doherty RF power GaN transistor designed for cellular base station amplifiers operating in the 2496–2690 MHz band, delivering 14.8 dB typical power gain and 55.5% drain efficiency at 2590 MHz under W-CDMA signal conditions with 9.9 dB PAR.

For engineers reviewing the A3G26H200W17SR3 datasheet, A3G26H200W17SR3 pinout, A3G26H200W17SR3 application, or A3G26H200W17SR3 equivalent, key selection criteria include guaranteed broadband Doherty performance across 2496–2690 MHz, ruggedness to high VSWR, internal input/output matching, and validated 48 V operation with dual-gate biasing sequence compliance.

Technical Context

This GaN HEMT implements an integrated asymmetrical Doherty architecture with separate carrier (Pin 1: RFinA/VGSA; Pin 6: RFoutA/VDSA) and peaking (Pin 5: RFinB/VGSB; Pin 3: RFoutB/VDSB) paths, enabling high-efficiency wideband amplification without external combining networks. Bias control requires independent gate voltage setting: VGSA(Q) = –2.7 Vdc (typ), VGSB = –5.3 Vdc (typ), with VDD = 48 Vdc.

Thermal design relies on low R_θJC(IR) = 1.2 °C/W and R_θCHC(FEA) = 1.75 °C/W, supporting operation up to T_J = +225 °C and T_CH = +275 °C. The device is internally matched for 50 Ω systems and characterized using NXP's standardized Doherty production test fixture with AWGN and W-CDMA signals.

Key Specifications

Pinout & Package

Package: NI-780S-4S2S - air-cavity ceramic/metal flanged package with solderable baseplate, optimized for high-power RF thermal dissipation and impedance stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with QPD1025 and AFGA300004, the A3G26H200W17SR3 delivers highest efficiency (55.5%) and best ACPR (–30.9 dBc) in its class, with integrated Doherty architecture reducing external component count by 30% and simplifying thermal layout via unified package footprint.

Availability

A3G26H200W17SR3 is available at Aetrix Electronics and suitable for cellular infrastructure, 5G massive MIMO active antenna units, and private network base stations requiring stable component supply, long-term lifecycle support, and traceable GaN transistor sourcing.

Supply support for A3G26H200W17SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with core expertise in RF power, security, and edge processing.

The A3G26H200W17SR3 belongs to NXP's AIRFAST® GaN RF power transistor family, engineered specifically for energy-efficient, spectrally clean, and thermally robust macro and small-cell base station amplifiers.

FAQ

What is the correct biasing sequence for safe operation of the A3G26H200W17SR3?

The A3G26H200W17SR3 requires strict depletion-mode GaN bias sequencing. To turn ON: first set V_GS to –5 V, then apply V_DS = 48 V, increase V_GS to target quiescent value (–2.7 V for carrier, –5.3 V for peaking), then apply RF. To turn OFF: remove RF, reduce V_GS to –5 V, reduce V_DS to 0 V (with sufficient settling time), then disable V_GS. Failure to follow this sequence risks permanent device damage.

Does the A3G26H200W17SR3 require external matching components?

No, the A3G26H200W17SR3 is internally matched for 50 Ω operation across 2496–2690 MHz. Its NI-780S-4S2S package integrates optimized input and output impedance transformation, eliminating discrete matching networks in standard base station PA layouts. External components are limited to DC blocking, bias decoupling, and thermal interface materials - not impedance tuning.

What is the maximum channel temperature rating for the A3G26H200W17SR3?

The A3G26H200W17SR3 is rated for a maximum channel temperature (T_CH) of +275 °C, as confirmed in Table 1 of the official NXP datasheet. This rating supports high-power density designs in thermally constrained environments, though reliability modeling (MTTF = 10^{[–11.1 + 8366/(T+273)]}) shows accelerated degradation above +225 °C junction temperature.

How does the A3G26H200W17SR3 perform under wideband noise stress testing?

The A3G26H200W17SR3 passes NXP's wideband ruggedness test: 120 W average modulated output (10 dB PAR, 400 MHz ISBW, 55 V_DS) at 2590 MHz with no device degradation. This validates its ability to withstand real-world signal impairments including high VSWR, spectral regrowth, and transient overloads common in multi-carrier LTE/5G deployments.

Is the A3G26H200W17SR3 pin-compatible with other NI-780S-4S2S GaN transistors?

The A3G26H200W17SR3 shares the NI-780S-4S2S mechanical footprint and pin numbering with other NXP devices in the same package family, but electrical pin functions (e.g., RFinA vs. RFinB assignment, VBW routing) are specific to its asymmetrical Doherty architecture. Direct substitution without circuit review is not recommended - verify gate bias topology, thermal pad layout, and RF routing compatibility before replacement.