NXP Semiconductors A3G26H350W17SR3

Overview

A3G26H350W17SR3 from NXP Semiconductors is a 59 W average power, asymmetrical Doherty GaN RF power transistor designed for cellular base station amplifiers operating in the 2496–2690 MHz band. It delivers 13.5 dB typical power gain, 48.5% drain efficiency, and –37.2 dBc ACPR at 2590 MHz under W-CDMA single-carrier conditions (9.9 dB PAR), supporting wide instantaneous bandwidth requirements in macrocell infrastructure.

For engineers reviewing the A3G26H350W17SR3 datasheet, A3G26H350W17SR3 pinout, A3G26H350W17SR3 application, or A3G26H350W17SR3 equivalent, key selection criteria include guaranteed Doherty performance across 2496–2690 MHz, ruggedness to high VSWR, thermal resistance of 0.70 °C/W (IR), and validated 55 Vdc maximum operating voltage with depletion-mode gate biasing sequence.

Technical Context

The A3G26H350W17SR3 integrates two GaN HEMT dies-carrier and peaking-in a single NI-780S-4S2S air-cavity package, configured as an internally input-matched asymmetrical Doherty amplifier. Its gate biasing requires separate VGSA (–2.7 V typ) and VGSB (–5.5 V) control, with VDDA/VDSB rated up to 55 Vdc and channel temperature limited to 225 °C.

It operates under strict frequency-bound performance guarantees: all RF specs-including Gps, ηD, ACPR, and P3dB (420 W)-are characterized and warranted only within 2496–2690 MHz. Outside this band, no performance assurance applies, and VBW resonance is fixed at 220 MHz for third-order IMD suppression.

Key Specifications

Pinout & Package

Package: NI-780S-4S2S, air-cavity ceramic/metal flanged package with solderable baseplate, optimized for RF thermal and impedance control in macro base station PA modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with QPD1025 and AFGA30000, the A3G26H350W17SR3 offers the highest guaranteed output power (59 W) within its band, lowest thermal resistance (0.70 °C/W), and most stringent ACPR specification (–37.2 dBc), making it optimal for spectral-mask-constrained macro base station deployments where efficiency and linearity margins are critical.

Availability

A3G26H350W17SR3 is available at Aetrix Electronics and suitable for cellular infrastructure, 5G massive MIMO active antenna units, and fixed wireless access equipment requiring stable component supply, long-lifecycle support, and traceable GaN transistor sourcing.

Supply support for A3G26H350W17SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with over 30 years of RF power expertise.

The A3G26H350W17SR3 belongs to NXP's AIRFAST® GaN RF power transistor family, engineered specifically for energy-efficient, spectrally clean, and thermally robust macro base station power amplifiers in 4G/5G TDD infrastructure.

FAQ

What is the maximum operating voltage for the A3G26H350W17SR3?

The A3G26H350W17SR3 has a maximum operating voltage (VDD) rating of 55 Vdc, with recommended operation at 48 Vdc per NXP's functional test conditions. Exceeding 55 Vdc risks permanent damage due to drain-source breakdown, and operation above 48 Vdc requires validation of thermal and reliability margins. The A3G26H350W17SR3 must be biased using the documented sequence: pre-bias gates to –5 V before applying drain voltage.

Does the A3G26H350W17SR3 require external input matching?

No, the A3G26H350W17SR3 is internally input-matched for operation across 2496–2690 MHz, eliminating the need for external input matching networks in standard 50 Ω systems. This simplifies PCB layout and improves repeatability in production. However, output matching remains system-dependent, and the A3G26H350W17SR3 datasheet provides reference impedance targets for optimal P3dB and ACPR performance.

What is the thermal resistance specification for the A3G26H350W17SR3?

The A3G26H350W17SR3 has an infrared-measured thermal resistance (RθJC) of 0.70 °C/W from active die surface to case, measured at 84 °C case temperature and 73 W power dissipation. This value is used for thermal design and heatsink sizing. For reliability analysis, the finite-element-analysis-derived RθCHC (FEA) of 1.10 °C/W must be applied to estimate channel temperature and MTTF.

How is the A3G26H350W17SR3 biased in a Doherty configuration?

The A3G26H350W17SR3 uses a two-stage gate biasing sequence: first set both VGSA and VGSB to –5 V, then apply 48 Vdc to VDSA and VDSB, followed by adjusting VGSA to achieve 250 mA IDQA, and finally setting VGSB to –5.5 Vdc. This sequence prevents gate overvoltage and ensures proper Doherty timing alignment. The A3G26H350W17SR3 datasheet specifies this procedure to avoid device degradation during power-up.

Is the A3G26H350W17SR3 suitable for frequencies outside 2496–2690 MHz?

No, the A3G26H350W17SR3 is characterized and performance-guaranteed only within 2496–2690 MHz. NXP explicitly states there is no guarantee of gain, efficiency, linearity, or ruggedness outside this band. Using the A3G26H350W17SR3 at 2.3 GHz or 3.5 GHz may result in unvalidated thermal behavior, degraded ACPR, or premature failure due to impedance mismatch and harmonic loading.