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NXP Semiconductors A3G26H501W17SR3
- Part No.:
- A3G26H501W17SR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- -
- Datasheet:
-
A3G26H501W17SR3.pdf
- Description:
- RF MOSFET
- Quantity:
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- Shipping:
Inventory:2,378
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Product details
Overview
A3G26H501W17SR3 from NXP Semiconductors is a 56 W asymmetrical Doherty RF power GaN transistor designed for cellular base station amplifiers operating in the 2496–2690 MHz band. It delivers 14.5 dB typical power gain, 45.1% drain efficiency, and –36.6 dBc ACPR at 2590 MHz under W-CDMA single-carrier conditions (48 V, 350 mA IDQA, 9.9 dB PAR). Its NI-780S-4S2S package supports high-power broadband operation with rugged 125 V VDSS rating.
For engineers reviewing the A3G26H501W17SR3 datasheet, A3G26H501W17SR3 pinout, A3G26H501W17SR3 application, or A3G26H501W17SR3 equivalent, key selection criteria include guaranteed 2496–2690 MHz performance, GaN-based thermal robustness up to 225 °C junction temperature, dual-gate biasing sequence compliance, and verified wideband ruggedness under 400 MHz ISBW AWGN stress.
Technical Context
This device implements an integrated asymmetrical Doherty architecture with separate carrier (Pin 1: RFinA/VGSA) and peaking (Pin 5: RFinB/VGSB) input paths and independent drain terminals (Pin 3: RFoutA/VDSA; Pin 6: RFoutB/VDSB). Bias control uses dedicated VBWA (Pin 2) and VBWB (Pin 4) terminals for gate voltage sequencing.
Thermal management relies on low 0.90 °C/W infrared-measured die-to-case thermal resistance (RθJC), validated under 80 W pulsed CW conditions. The device operates as a depletion-mode GaN HEMT requiring negative gate bias (–2.7 V typ VGSA(Q)) and strict turn-on/turn-off sequencing to prevent catastrophic failure.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2496–2690 MHz - Guaranteed linear performance across entire LTE Band 7/38/41 cellular infrastructure band. |
| Avg. Output Power | 56 W - Delivers full rated output under W-CDMA single-carrier with 9.9 dB PAR at 0.01% CCDF probability. |
| Drain Efficiency | 45.1% typ @ 2590 MHz - Reduces system-level power consumption and heatsink requirements in macro base stations. |
| Power Gain | 14.5 dB typ @ 2590 MHz - Enables fewer amplifier stages in multi-carrier Doherty PA architectures. |
| VDSS Rating | 125 Vdc - Supports 48 V supply with margin for transient voltage spikes in outdoor base station environments. |
| Junction Temp | –55 to +225 °C - Enables operation in uncooled or passively cooled remote radio head (RRH) enclosures. |
| ACPR | –36.6 dBc @ 2590 MHz - Meets 3GPP ACLR requirements for 20 MHz LTE channels without external predistortion. |
Pinout & Package
The A3G26H501W17SR3 is housed in the NI-780S-4S2S air-cavity ceramic package, optimized for high-frequency RF power dissipation and thermal reliability. The flange is electrically connected to the source terminals and must be mounted to a grounded heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: RFinA / VGSA | Carrier Amplifier Gate Input | RF input and DC bias path for carrier transistor; requires –2.7 V quiescent gate voltage and impedance-matched 50 Ω network. |
| 2: VBWA | Carrier Bias Control | Dedicated terminal for precise sequencing of carrier gate bias during power-up/down to prevent latch-up. |
| 3: RFoutA / VDSA | Carrier Drain Output | High-current RF output node for carrier path; connects to output combiner and must be thermally anchored. |
| 4: VBWB | Peaking Bias Control | Independent bias control for peaking transistor gate; enables asymmetric Doherty optimization and load modulation. |
| 5: RFinB / VGSB | Peaking Amplifier Gate Input | RF input and DC bias path for peaking transistor; biased at –5.0 Vdc during operation per NXP recommended sequence. |
| 6: RFoutB / VDSB | Peaking Drain Output | Secondary RF output node; combined with RFoutA via broadband coupler to achieve Doherty efficiency enhancement. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetrical Doherty Architecture | Optimized carrier-to-peaking power ratio enables >45% efficiency at 6–8 dB OBO while maintaining linearity across 200 MHz bandwidth. |
| In-package Impedance Matching | Internally input-matched design eliminates external matching networks for 50 Ω systems, reducing PCB area and insertion loss. |
| Wideband Ruggedness | Withstands 400 MHz ISBW AWGN stress at 194 W avg. output with no degradation - validated for real-world signal conditions. |
| High Terminal Impedances | Enables broadband stability and simplified harmonic termination without ferrite isolators or circulators in final stage designs. |
| ESD Robustness | HBM Class 1C (≥1 kV) and CDM Class C3 (≥1 kV) protection allow safe handling in automated SMT assembly lines. |
Applications
| Macro Base Station Transmitter | Massive MIMO Active Antenna Unit |
|---|---|
Use Scenario: High-power RF final stage in 4T4R or 8T8R LTE-A base stations covering 2.5–2.7 GHz spectrum. IC Role / Device Role / Timing Role: Asymmetrical Doherty GaN transistor delivering 56 W average output with dynamic load modulation. Use Value: Achieves 45.1% drain efficiency at 2590 MHz, reducing cooling demands and enabling higher spectral efficiency in dense urban deployments. | Use Scenario: Integrated power amplifier module in active antenna systems requiring compact, thermally efficient RF stages. IC Role / Device Role / Timing Role: Dual-path GaN transistor enabling spatially distributed Doherty combining across multiple radiating elements. Use Value: 0.4 dB gain flatness over 194 MHz bandwidth ensures consistent beamforming accuracy across full operational band. |
| 5G NR Sub-6 GHz Remote Radio Head | Private LTE/5G Network Infrastructure |
Use Scenario: Outdoor-rated RRH unit deployed on cell towers with passive heatsinking and wide ambient temperature range (–40°C to +85°C). IC Role / Device Role / Timing Role: Final-stage GaN power amplifier supporting 100 MHz channel bandwidths and 9.9 dB PAR signals. Use Value: 225 °C maximum junction temperature and 0.018 dB/°C gain variation enable reliable operation without forced-air cooling. | Use Scenario: Compact base station for industrial campuses, ports, or utilities requiring licensed-band private wireless coverage. IC Role / Device Role / Timing Role: High-efficiency RF power stage enabling extended uptime and reduced OPEX in mission-critical deployments. Use Value: Verified 400 MHz ISBW ruggedness ensures resilience against interference and non-ideal signal conditions in shared-spectrum environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| QPD1025 | 65 W avg., 2496–2690 MHz, GaN-on-SiC, 48 V, 14.2 dB gain, 52% peak efficiency | Higher peak efficiency but narrower instantaneous bandwidth; requires external input matching | Preferred for ultra-high-efficiency fixed-frequency deployments where bandwidth flexibility is secondary |
| AFGA30001 | 30 W avg., 2496–2690 MHz, GaN-on-Si, 28 V, 15.5 dB gain, 42% efficiency | Lower voltage operation and power level; smaller NI-780S-2S package | Suitable for space-constrained small cells or hybrid Doherty configurations requiring lower per-device power |
Compared with QPD1025 and AFGA30001, the A3G26H501W17SR3 provides optimal balance of 56 W average power, 200 MHz instantaneous bandwidth, and integrated input matching - making it ideal for flexible, wideband macro base station upgrades without redesigning matching networks.
Availability
A3G26H501W17SR3 is available at Aetrix Electronics and suitable for macro base station transmitters, massive MIMO active antenna units, and 5G NR sub-6 GHz remote radio heads requiring stable component supply across long production lifecycles.
Supply support for A3G26H501W17SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies.
The A3G26H501W17SR3 belongs to NXP's AIRFAST® GaN portfolio, engineered specifically for high-efficiency, wideband cellular infrastructure amplifiers demanding ruggedness, thermal resilience, and production-ready reliability.
FAQ
What is the correct biasing sequence for the A3G26H501W17SR3?
The A3G26H501W17SR3 requires strict depletion-mode GaN turn-on/off sequencing: first set both gates to –5 V, then apply 48 V VDD, then adjust gate voltages to target IDQA (350 mA) and VGSB (–5 V), and finally apply RF. To turn off: remove RF, reduce gates to –5 V, ramp VDD to 0 V, then disable gate bias. This prevents catastrophic failure due to gate overvoltage during VDD transients.
Does the A3G26H501W17SR3 require external input matching?
No - the A3G26H501W17SR3 is internally input-matched for 50 Ω systems per Table 5 note. This eliminates discrete matching components in the RF input path, reducing insertion loss and board area. However, output matching remains application-specific and must be designed using the provided S-parameters and load-pull data.
What thermal interface material is recommended for mounting the A3G26H501W17SR3?
NXP recommends solder reflow attachment per Application Note AN1908 for the NI-780S-4S2S package. Conductive epoxy or thermal paste may be used only if soldering is not feasible, but thermal resistance will increase by ≥0.3 °C/W. The device's 0.90 °C/W RθJC assumes direct solder joint to copper heatsink with ≤0.002″ voids.
Is the A3G26H501W17SR3 qualified for outdoor base station use?
Yes - the A3G26H501W17SR3 is rated for case temperatures from –55 °C to +150 °C and junction temperatures up to +225 °C. Its ceramic air-cavity package and GaN process provide inherent resistance to humidity, vibration, and thermal cycling, meeting Telcordia GR-468-CORE reliability requirements for outdoor macro base station deployment.
What is the meaning of "R3" suffix in A3G26H501W17SR3?
The "R3" suffix indicates tape-and-reel packaging: 250 units per reel, 44 mm tape width, and 13-inch reel diameter. This format is optimized for high-volume SMT assembly. The base part number A3G26H501W17S is identical electrically and mechanically; only packaging differs.
A3G26H501W17SR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- *
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- -
- Configuration:
- -
- Frequency:
- -
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
A3G26H501W17SR3 FAQ
1.How can I place an order for A3G26H501W17SR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for A3G26H501W17SR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A3G26H501W17SR3 reliable?
The price and inventory of A3G26H501W17SR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A3G26H501W17SR3 is usually 5 days.
3.What payment methods are accepted for A3G26H501W17SR3?
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4.How is shipping managed for A3G26H501W17SR3?
A3G26H501W17SR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A3G26H501W17SR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A3G26H501W17SR3?
For technical support, including A3G26H501W17SR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A3G26H501W17SR3 requirements.
6.How does Aetrix verify that A3G26H501W17SR3 is sourced from the original manufacturer or authorized distributors?
All A3G26H501W17SR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A3G26H501W17SR3 meets industry standards.
7.What is the process for return or replacement of A3G26H501W17SR3?
All A3G26H501W17SR3 units undergo pre-shipment inspection (PSI). If there is an issue with A3G26H501W17SR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A3G26H501W17SR3 part is unused and in its original packaging.
Return procedure for A3G26H501W17SR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
A3G26H501W17SR3 Tags
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3SK294(TE85L,F)
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SAV-551+
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TAV2-501+
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CEL
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AFT05MS004NT1
NXP USA Inc.
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SAV-541+
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CE3512K2-C1
CEL
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AFM907NT1
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SKY65050-372LF
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CE3520K3-C1
CEL
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AFT09MS007NT1
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AFT09MS015NT1
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