NXP Semiconductors A3G35H100-04SR3

Overview

A3G35H100-04SR3 from NXP Semiconductors is a 14 W average power, asymmetrical Doherty RF GaN transistor designed for cellular base station power amplifiers operating in the 3400–3600 MHz band. It delivers 14.0 dB power gain, 42.5% drain efficiency, and –32.2 dBc ACPR at 3500 MHz under W-CDMA single-carrier conditions (Pout = 14 W Avg., PAR = 9.9 dB, VDD = 48 V).

For engineers reviewing the A3G35H100-04SR3 datasheet, A3G35H100-04SR3 pinout, A3G35H100-04SR3 application, or A3G35H100-04SR3 equivalent, key selection criteria include guaranteed 3400–3600 MHz Doherty performance, high VSWR tolerance, thermal robustness up to TJ = 225 °C, and NI-780S-4L package compatibility with high-power RF PCB layouts.

Technical Context

The A3G35H100-04SR3 integrates two GaN HEMT dies-Carrier and Peaking-in a monolithic asymmetrical Doherty configuration, internally input-matched for 50 Ω systems. Its gate biasing requires precise sequencing: VGS must be set to –5 V before applying VDS, and reversed during shutdown to prevent device damage.

It operates as a depletion-mode transistor with dual independent gate terminals (VGSA, VGSB) and dual drain terminals (VDSA, VDSB), enabling independent bias control of Carrier and Peaking paths. Thermal management relies on low RθJC (IR) = 2.3 °C/W, validated via infrared measurement at 71 °C case temperature and 24.3 W dissipation.

Key Specifications

Pinout & Package

Package: NI-780S-4L - 4-lead air-cavity ceramic package with flanged metal base, optimized for high-frequency RF thermal and electrical performance. Mounting requires controlled reflow per AN1908.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with QPD1025 and CGHV14800F, the A3G35H100-04SR3 provides best-in-class thermal resistance and verified asymmetric Doherty linearity across the full 3400–3600 MHz band, making it optimal for space-constrained, thermally demanding 5G RRH and AAS implementations where layout reuse and thermal predictability are critical.

Availability

A3G35H100-04SR3 is available at Aetrix Electronics and suitable for 5G massive MIMO active antenna units, macro-cell remote radio heads, and private campus network base stations requiring stable component supply, long lifecycle assurance, and traceable GaN sourcing.

Supply support for A3G35H100-04SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies.

The A3G35H100-04SR3 belongs to NXP's AIRFAST® GaN portfolio, engineered specifically for energy-efficient, high-linearity 5G infrastructure power amplifiers operating in licensed sub-6 GHz bands.

FAQ

What is the correct biasing sequence for the A3G35H100-04SR3?

The A3G35H100-04SR3 requires strict gate-first biasing: set VGSA and VGSB to –5.0 Vdc before applying VDD; then ramp VGS to target quiescent current (e.g., IDQA = 80 mA); finally apply RF input. To shut down, remove RF first, return VGS to –5.0 Vdc, reduce VDD to 0 V, then disable gate bias. This prevents catastrophic failure due to GaN depletion-mode characteristics.

Does the A3G35H100-04SR3 support operation outside the 3400–3600 MHz band?

No. The A3G35H100-04SR3 is characterized and performance-guaranteed exclusively for 3400–3600 MHz operation. NXP explicitly states there is no performance guarantee outside this band, and using it at other frequencies may result in degraded gain, efficiency, or reliability. Designers must verify all parameters within this range only.

What is the maximum junction temperature rating for continuous operation of the A3G35H100-04SR3?

The A3G35H100-04SR3 is rated for continuous operation up to TJ = 225 °C. While absolute maximum junction temperature is 275 °C, operation above 225 °C is not characterized and reduces median time to failure by an order of magnitude. For reliable long-term use, thermal design must maintain junction temperature ≤225 °C under worst-case RF and ambient conditions.

How does the A3G35H100-04SR3 handle load mismatch conditions?

The A3G35H100-04SR3 is tested and qualified to withstand 10:1 VSWR at 55 Vdc and 158 W pulsed CW output power without degradation. This capability is enabled by its high VDSS rating (125 Vdc), robust gate protection, and internal Doherty architecture that inherently limits peak voltage stress during mismatch events-critical for antenna-integrated 5G systems.

Is the A3G35H100-04SR3 internally matched, and what does that mean for circuit design?

Yes, the A3G35H100-04SR3 is internally input-matched for 50 Ω systems, meaning no external input matching network is required for nominal operation. This simplifies PCB layout, reduces component count, and improves repeatability across production units-though output matching remains necessary and is optimized for specific load-pull contours per the datasheet's recommended test fixture.