NXP Semiconductors A3I25D080GNR1

Overview

A3I25D080GNR1 from NXP Semiconductors is a 2300–2690 MHz integrated Doherty RF power amplifier based on LDMOS technology, rated for 28 V operation with 8.3 W average output power, 29.2 dB typical power gain, and 35.6% typical power-added efficiency in W-CDMA modulation. It serves as the final-stage PA in macro/micro base station transceivers.

For engineers reviewing the A3I25D080GNR1 datasheet, A3I25D080GNR1 pinout, A3I25D080GNR1 application, or A3I25D080GNR1 equivalent, key selection criteria include its on-chip 50 Ω input matching, integrated quiescent current thermal compensation, RF-decoupled drain pins, and verified ruggedness under 10 dB PAR AWGN stress at 30 Vdc.

Technical Context

The A3I25D080GNR1 implements a two-stage Doherty architecture with separate carrier and peaking paths, each containing dual LDMOS transistors per side (A/B). Its integrated splitter and combiner enable broadband operation across 2300–2690 MHz without external impedance-matching networks.

Quiescent current is thermally compensated via on-die circuitry referenced to 2.4 kΩ gate feed resistors, maintaining stability from –40°C to +85°C. Drain-source voltage rating of +65 Vdc supports transient overvoltage tolerance during mismatched load conditions.

Key Specifications

Pinout & Package

Package: TO-270WBG-17 (plastic, gull-wing leads); exposed backside = source terminal; 17-pin configuration with symmetric A/B RF paths and dedicated bias/control terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with AFM906S and MMRF1022, the A3I25D080GNR1 uniquely delivers integrated Doherty functionality, on-chip 50 Ω matching, and factory-calibrated thermal compensation specifically optimized for LTE Band 7/40 base station PA stages - eliminating external components while ensuring stable performance across temperature and voltage variations.

Availability

A3I25D080GNR1 is available at Aetrix Electronics and suitable for macro base station transceivers, small cell remote radio heads, MIMO antenna arrays, and multi-band base station platforms requiring stable component supply and long-term lifecycle support.

Supply support for A3I25D080GNR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The A3I25D080GNR1 belongs to NXP's AIRFAST RF LDMOS product line, engineered specifically for high-efficiency, broadband, thermally robust power amplification in cellular infrastructure equipment.

FAQ

What is the operating voltage range for the A3I25D080GNR1?

The A3I25D080GNR1 is rated for 20 to 32 V operation, with typical characterization performed at 28 Vdc. Its maximum drain-source voltage is +65 Vdc, providing margin against transient overvoltage events common in base station antenna interfaces. The device maintains specified RF performance across this full range, making it suitable for both fixed 28 V and variable-voltage PA supply architectures.

Does the A3I25D080GNR1 require external input matching?

No, the A3I25D080GNR1 features on-chip 50 Ω input matching with DC blocking, eliminating the need for external baluns or matching networks. This integration is confirmed in the datasheet's "Features" section and validated through functional test data showing stable S11 < –15 dB across 2300–2690 MHz - enabling direct connection to preceding driver stages in standard 50 Ω systems.

How is thermal stability achieved in the A3I25D080GNR1?

The A3I25D080GNR1 incorporates an integrated quiescent current thermal compensation circuit that adjusts gate bias in response to die temperature, maintaining IDQ stability within ±9.52% (Stage 1) and ±12.79% (Stage 2) from –40°C to +85°C. This function is enabled/disabled via dedicated control terminals and is documented in application notes AN1977 and AN1987.

What is the package type and lead configuration of the A3I25D080GNR1?

The A3I25D080GNR1 uses the TO-270WBG-17 plastic package with gull-wing leads. The "G" suffix explicitly denotes gull-wing formation, distinguishing it from the straight-lead TO-270WB-17 variant (A3I25D080NR1). The exposed backside metal serves as the source terminal and must be soldered to a thermal pad on the PCB for effective heat dissipation.

Is the A3I25D080GNR1 suitable for 5G NR applications?

The A3I25D080GNR1 is optimized for 4G LTE Band 7 (2500–2690 MHz) and Band 40 (2300–2400 MHz), not 5G NR bands such as n78 (3300–3800 MHz). While its 2300–2690 MHz coverage overlaps with early 5G deployments in China (n41 sub-band), it lacks the instantaneous bandwidth, ACLR performance, and modulation fidelity required for full 5G NR FR1 operation - use MMRF1022 or similar GaN devices for n78/n77.