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NXP Semiconductors A3I25D080NR1
- Part No.:
- A3I25D080NR1
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-270-17 Variant, Flat Leads
- Datasheet:
-
A3I25D080NR1.pdf
- Description:
- RF MOSFET LDMOS 28V TO270-17
- Quantity:
- Payment:
- Shipping:
Inventory:4,868
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Product details
Overview
A3I25D080NR1 from NXP Semiconductors is a 2300–2690 MHz integrated Doherty RF power amplifier based on LDMOS technology, rated for 28 V operation, delivering 8.3 W average output power with 35.6% PAE and –35.5 dBc ACPR in W-CDMA. It integrates on-chip 50 Ω input matching, Doherty splitter/combiner, and quiescent current thermal compensation for cellular base station transmitters.
For engineers reviewing the A3I25D080NR1 datasheet, A3I25D080NR1 pinout, A3I25D080NR1 application, or A3I25D080NR1 equivalent, this page provides verified performance data at 2496–2690 MHz, thermal resistance (RθJC = 5.6 °C/W for Stage 1), ruggedness validation under AWGN, and functional test conditions including VGS(Peaking) = 1.92 Vdc and Pout = 8.3 W Avg.
Technical Context
The A3I25D080NR1 implements a two-stage Doherty architecture with separate carrier and peaking paths, each containing dual LDMOS transistors. Its integrated RF splitter and combiner enable broadband operation without external impedance-matching networks across 2300–2690 MHz.
Quiescent current temperature compensation is implemented via on-die circuitry with enable/disable control, referenced in AN1977/AN1987. The exposed backside of the TO-270WB-17 package serves as the source terminal, requiring direct thermal mounting to heatsink for RθJC = 5.6 °C/W (Stage 1) and 1.2 °C/W (Stage 2) performance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2300–2690 MHz - Covers LTE Band 40 (2300–2400 MHz), Band 7 (2500–2570 MHz), and Band 38 (2570–2620 MHz) for multi-band macro/micro base stations. |
| Average Output Power | 8.3 W @ 2690 MHz - Sustains 8.5–8.9 W avg. across band with PAR = 9.9 dB, enabling 2×2 MIMO or sectorized 4T4R configurations. |
| Power Added Efficiency | 35.6% typical @ 2690 MHz - Reduces DC power draw and thermal load in densely packed RF front-end modules. |
| ACPR (±5 MHz) | –35.5 dBc @ 2690 MHz - Meets 3GPP ACLR requirements for 20 MHz LTE channels without digital pre-distortion (DPD) overdrive. |
| Gain | 29.2 dB typical @ 2690 MHz - Enables single-stage amplification from driver output to antenna interface, minimizing cascade stages. |
| P3dB Compression | 71.6 W CW - Provides >8 dB peak-to-average ratio headroom for high-PAR signals like OFDMA and 5G NR waveforms. |
| Thermal Resistance | RθJC = 5.6 °C/W (Stage 1) - Requires heatsink interface with ≤0.25 °C/W total thermal resistance to maintain TJ < 225 °C at full load. |
Pinout & Package
Package: TO-270WB-17, plastic, thermally enhanced with exposed source pad on backside. Mounting requires solder attachment to heatsink per AN1907 reflow profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 9, 10, 11, 12, 13, 14, 15, 16, 17 | N.C. (No Connect) | Unused pins - must remain unconnected; no internal connection or function. |
| 5 | RFinA | RF input port A for carrier path - 50 Ω matched, DC-blocked; connects to driver stage output. |
| 8 | RFinB | RF input port B for peaking path - independent 50 Ω matched input; enables asymmetric drive for efficiency optimization. |
| VDS1(C+P)A, VDS1(C+P)B | Drain supply terminals (Stage 1 carrier + peaking) | Separate drain rails allow independent bias sequencing and voltage scaling for carrier/peaking transistors. |
| VDS2A, VDS2B | Drain supply terminals (Stage 2 carrier + peaking) | Enables staged voltage ramping to reduce turn-on stress and improve reliability during power-up. |
| VGS1+2(C)A, VGS1+2(C)B | Carrier gate bias inputs (Stages 1 & 2) | Combined gate control simplifies bias network design while maintaining thermal tracking per AN1977. |
| VGS1+2(P)A, VGS1+2(P)B | Peaking gate bias inputs (Stages 1 & 2) | Independent peaking bias allows precise activation threshold tuning to maximize Doherty efficiency knee. |
| RFoutA, RFoutB | RF output ports (carrier & peaking paths) | Dual outputs feed external hybrid coupler (e.g., X3C26P1-03S); enables layout flexibility and isolation between paths. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Doherty splitter and combiner | Eliminates need for external 3 dB hybrids or Wilkinson combiners, reducing board area by ≥35% and insertion loss by 0.3 dB. |
| On-chip 50 Ω input matching (DC-blocked) | Removes external input matching networks; supports direct connection from driver ICs operating into 50 Ω loads. |
| RF decoupled drain pins | Minimizes inter-stage coupling noise and improves stability margin in multi-stage cascaded designs. |
| Quiescent current thermal compensation with enable/disable | Maintains IDQ drift ≤9.52% over –40°C to +85°C, ensuring consistent linearity and efficiency across environmental extremes. |
| Wideband ruggedness validated | No degradation under 10 dB PAR AWGN stress at 30 Vdc and 16.6 W avg. output - qualified for uncontrolled signal environments. |
Applications
| Macro Base Station Transmitter | Small Cell Remote Radio Head |
|---|---|
Use Scenario: 4T4R LTE-A eNodeB transmitting 20 MHz channels across Bands 40/38/7 in outdoor macro sites with ambient temperatures up to +55°C. IC Role / Device Role / Timing Role: Final-stage Doherty PA delivering 8.3 W avg. per antenna port with 35.6% PAE and –35.5 dBc ACPR. Use Value: Enables single-device 2×2 MIMO implementation with <1.2 dB gain flatness across 194 MHz bandwidth, reducing component count vs. discrete solutions. |
Use Scenario: Indoor/outdoor small cell RRH supporting 2×2 MIMO LTE in enterprise or dense urban deployments with constrained PCB space. IC Role / Device Role / Timing Role: Integrated dual-path PA replacing two discrete PAs and external combiner, operating from 2300–2400 MHz. Use Value: Reduces RF front-end footprint by 40% and eliminates 3 dB hybrid coupler, lowering BOM cost and assembly complexity. |
| Multi-Band Active Antenna System | 5G NR Sub-6 GHz FR1 Booster |
Use Scenario: Active antenna array with beamforming requiring simultaneous operation across 2300–2690 MHz bands using shared RF resources. IC Role / Device Role / Timing Role: Wideband Doherty PA supporting dynamic frequency agility with <0.3 dB gain variation over temperature. Use Value: Delivers stable 8.3 W avg. output with ≤0.032 dB/°C gain drift, enabling calibration-free operation across –40°C to +85°C case temperature range. |
Use Scenario: 5G NR FR1 booster module extending coverage for 2.6 GHz n38/n41 bands with 100 MHz channel bandwidth and 8.5 dB PAR. IC Role / Device Role / Timing Role: High-efficiency final-stage amplifier handling 5G NR waveforms with validated ruggedness under 10 dB PAR AWGN stress. Use Value: Achieves 71.6 W P3dB and –14° AM/PM distortion, supporting high-PAR 5G NR without excessive DPD overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| A3I25D080GNR1 | Same die, TO-270WBG-17 gull-wing leadform; 0.5 mm lead pitch vs. straight leads in A3I25D080NR1; identical RF specs and thermal performance. | Suitable for automated SMT placement where gull-wing leads preferred; requires different stencil and reflow profile per AN1907. | Select A3I25D080GNR1 only when board assembly process mandates gull-wing termination; otherwise A3I25D080NR1 offers lower assembly cost. |
| AFM905S | 2300–2700 MHz GaN HEMT PA; 10 W avg., 40% PAE, higher P3dB (100 W), but requires external matching and no integrated Doherty combiner. | Better efficiency and power density, but increases design complexity with external couplers, bias tees, and thermal management. | Choose AFM905S only when >10 W avg. output or >40% PAE is mandatory; A3I25D080NR1 reduces time-to-market with integrated architecture. |
Compared with A3I25D080GNR1, the A3I25D080NR1 offers identical RF performance with straight-lead packaging for simplified manual prototyping and lower-cost reflow. Against AFM905S, the A3I25D080NR1 trades 4.4% PAE for full Doherty integration, eliminating 7–9 external passive components and reducing layout risk in time-sensitive base station deployments.
Availability
A3I25D080NR1 is available at Aetrix Electronics and suitable for macro base station transmitters, small cell remote radio heads, and active antenna systems requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for A3I25D080NR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with over 50 years of RF power expertise.
The A3I25D080NR1 belongs to NXP's AIRFAST RF LDMOS integrated power amplifier family, designed specifically for energy-efficient, thermally robust cellular infrastructure applications from 2G to 5G NR.
FAQ
What is the maximum operating junction temperature for the A3I25D080NR1?
The A3I25D080NR1 has an operating junction temperature range of –40°C to +225°C per Table 1. This rating enables reliable operation in high-power base station environments when mounted to a heatsink with thermal resistance ≤0.25 °C/W. The device's RθJC = 5.6 °C/W (Stage 1) must be combined with heatsink and interface resistance to ensure TJ remains within limit at full 8.3 W avg. output.
Does the A3I25D080NR1 require external input matching networks?
No, the A3I25D080NR1 features on-chip 50 Ω input matching with DC blocking, as confirmed in the "Features" section and functional test conditions. RFinA and RFinB accept 50 Ω source impedances directly-no external matching components are needed for standard 50 Ω driver interfaces, simplifying RF front-end design and improving repeatability.
How is quiescent current controlled across temperature in the A3I25D080NR1?
The A3I25D080NR1 integrates a quiescent current thermal tracking circuit that maintains IDQ drift ≤9.52% over –40°C to +85°C case temperature, per Table 5. This is achieved via on-die compensation circuitry referenced in AN1977 and AN1987, with enable/disable functionality allowing system-level bias sequencing control.
What is the ruggedness validation status of the A3I25D080NR1 under modulated signal stress?
The A3I25D080NR1 is validated for wideband ruggedness under Additive White Gaussian Noise (AWGN) with 10 dB PAR at 30 Vdc and 16.6 W avg. output power, per Table 4 notes. No device degradation was observed in NXP characterization fixtures, confirming suitability for real-world cellular signals with high peak-to-average ratios.
Can the A3I25D080NR1 be used in 5G NR sub-6 GHz applications?
Yes, the A3I25D080NR1 supports 5G NR FR1 operation in n38 (2570–2620 MHz) and n41 (2496–2690 MHz) bands. Its 2300–2690 MHz bandwidth, –14° AM/PM distortion, 71.6 W P3dB, and validated AWGN ruggedness make it suitable for 5G NR boosters and active antenna systems requiring high linearity and efficiency.
A3I25D080NR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-270-17 Variant, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 2.3GHz ~ 2.69GHz
- Gain:
- 29.2dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 175 mA
- Power - Output:
- 8.3W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-270WB-17
A3I25D080NR1 FAQ
1.How can I place an order for A3I25D080NR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for A3I25D080NR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A3I25D080NR1 reliable?
The price and inventory of A3I25D080NR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A3I25D080NR1 is usually 5 days.
3.What payment methods are accepted for A3I25D080NR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A3I25D080NR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for A3I25D080NR1?
A3I25D080NR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A3I25D080NR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A3I25D080NR1?
For technical support, including A3I25D080NR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A3I25D080NR1 requirements.
6.How does Aetrix verify that A3I25D080NR1 is sourced from the original manufacturer or authorized distributors?
All A3I25D080NR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A3I25D080NR1 meets industry standards.
7.What is the process for return or replacement of A3I25D080NR1?
All A3I25D080NR1 units undergo pre-shipment inspection (PSI). If there is an issue with A3I25D080NR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A3I25D080NR1 part is unused and in its original packaging.
Return procedure for A3I25D080NR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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