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NXP Semiconductors A3I25X050GNR1
- Part No.:
- A3I25X050GNR1
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- OM-400G-8
- Datasheet:
-
A3I25X050GNR1.pdf
- Description:
- RF MOSFET LDMOS 28V OM400G-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,512
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Product details
Overview
A3I25X050GNR1 from NXP Semiconductors is a 2300–2700 MHz integrated Doherty RF power amplifier based on LDMOS technology, rated for 28 V operation, delivering up to 8.9 W average output power in W-CDMA with 44.5% PAE at 2300 MHz and –30.6 dBc ACPR, used in macro/micro base station transmit stages.
For engineers reviewing the A3I25X050GNR1 datasheet, A3I25X050GNR1 pinout, A3I25X050GNR1 application, or A3I25X050GNR1 equivalent, key selection criteria include its on-chip 50 Ω input matching, integrated quiescent current thermal compensation, dual-stage Doherty architecture, and ruggedness under 10 dB PAR AWGN stress at 32 Vdc.
Technical Context
The A3I25X050GNR1 implements a monolithic two-stage Doherty topology with separate carrier and peaking amplifiers, integrated on-chip splitter/combiner and DC-blocked 50 Ω input matching. It operates across 2300–2700 MHz with fixed VGS(Peaking) biasing (3.0–3.75 Vdc) and carrier IDQ = 130 mA.
Thermal design is supported by low junction-to-case thermal resistance (8.3 °C/W for Stage 1, 2.0 °C/W for Stage 2), and quiescent current stability is maintained via on-die temperature compensation circuitry with enable/disable control-verified over –40 °C to +85 °C with ±6.5% accuracy.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2300–2700 MHz - Covers LTE Bands 40, 38, 7, and 41 for cellular infrastructure deployment. |
| Avg. Output Power (W-CDMA) | 8.9 W @ 2300 MHz - Enables single-carrier high-efficiency transmission in small-cell base stations. |
| Power Added Efficiency | 44.5% @ 2300 MHz - Reduces thermal load and DC power consumption in densely packed RF modules. |
| ACPR (±5 MHz offset) | –30.6 dBc @ 2300 MHz - Meets 3GPP ACLR requirements for adjacent channel leakage without external predistortion. |
| Gain (Gps) | 29.2 dB @ 2300 MHz - Provides sufficient system gain margin before final stage filtering and antenna coupling. |
| P3dB (CW) | 55.0 W - Supports peak envelope power handling for multi-tone and OFDMA signals with headroom. |
| Thermal Resistance (RθJC) | Stage 1: 8.3 °C/W; Stage 2: 2.0 °C/W - Enables direct heatsink mounting with predictable junction temperature rise under full load. |
| ESD Rating | HBM Class 1C, CDM Class C3 - Ensures robustness during PCB assembly and field handling in telecom environments. |
Pinout & Package
Package: OM-400G-8, plastic gull-wing surface-mount package with exposed source pad (backside) serving as common source terminal and thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | VDS1 (Carrier Drain) | Main drain supply for carrier amplifier stage; must be decoupled locally-no shared decoupling with Pin 7. |
| 2 | RFin (Input) | DC-blocked 50 Ω matched RF input; no external matching required for 2300–2700 MHz band. |
| 3 | VGS(C) (Carrier Gate Bias) | Adjustable gate voltage input for carrier stage quiescent current control and thermal tracking. |
| 4 | VGS(P) (Peaking Gate Bias) | Independent bias input for peaking stage; sets turn-on threshold and compression behavior. |
| 5 | VDS2/RFout (Peaking Drain / RF Output) | Combined drain node and RF output port; integrates Doherty combiner output directly to antenna interface. |
| 6 | VGS1(C) (Carrier Stage 1 Gate) | Internal gate connection for first carrier transistor; externally accessible for fine-tuning. |
| 7 | VDS1 (Redundant Carrier Drain) | Second carrier drain terminal; must be decoupled separately-max 1.8 A internal current between Pins 1 and 7. |
| 8 | VGS2(C) (Carrier Stage 2 Gate) | Internal gate connection for second carrier transistor; enables multi-stage carrier optimization. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Doherty splitter/combiner | Eliminates external couplers and combiners-reduces board area and insertion loss in compact RF front-ends. |
| On-chip 50 Ω input matching | Enables direct connection to preceding driver stage without discrete matching networks across full 2300–2700 MHz band. |
| Quiescent current thermal compensation | Maintains stable IDQ across –40 °C to +85 °C with ±6.5% variation-critical for outdoor base station reliability. |
| Wideband ruggedness (AWGN) | No degradation at 32 Vdc, 10 dB PAR, 400 MHz ISBW-validates reliability under real-world modulated signal stress. |
| Gain flatness (194 MHz BW) | 0.3 dB variation at 5.6 W avg.-ensures consistent linearization performance across LTE channel bandwidths. |
Applications
| Macro Base Station Transmitter | Small-Cell Remote Radio Head |
|---|---|
|
Use Scenario: High-power LTE FDD/TDD transmission in outdoor macro sites covering multi-sector cells. IC Role / Device Role / Timing Role: Final-stage Doherty PA delivering 8.9 W avg. output into 50 Ω load with integrated thermal compensation. Use Value: Delivers 44.5% PAE at 2300 MHz while meeting –30.6 dBc ACLR, reducing cooling requirements and OPEX in energy-constrained deployments. |
Use Scenario: Compact, fanless RRH units deployed on street furniture or building façades with strict size/thermal limits. IC Role / Device Role / Timing Role: Single-package wideband PA enabling simplified RF layout and reduced component count in sub-6 GHz mmWave-adjacent bands. Use Value: On-chip matching and 0.3 dB gain flatness eliminate external tuning, accelerating time-to-market for OEM RRH designs. |
| Active Antenna System (AAS) Module | Private LTE/5G NR Network Base Unit |
|
Use Scenario: Integrated active antenna arrays requiring distributed, thermally stable PA elements per radiating element. IC Role / Device Role / Timing Role: Thermally compensated Doherty amplifier supporting beamforming calibration stability across temperature gradients. Use Value: ±6.5% IDQ variation over –40 °C to +85 °C ensures consistent EVM and ACLR across array elements without per-channel recalibration. |
Use Scenario: Industrial campus or utility grid private networks needing reliable, long-lifecycle RF components with documented ruggedness. IC Role / Device Role / Timing Role: Ruggedized wideband PA validated for 10 dB PAR AWGN stress at 32 Vdc-supports mission-critical uptime. Use Value: No device degradation under wideband noise stress confirms suitability for unlicensed spectrum reuse and interference-prone environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Doherty RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AFM30500N | Higher Pout (10 W avg.), wider bandwidth (1800–2700 MHz), but higher VDD sensitivity (28–32 V) and no integrated thermal compensation. | Preferred for multi-band macro sites requiring broader frequency coverage; requires external IDQ stabilization circuitry. | Select AFM30500N when bandwidth extension beyond 2300–2700 MHz is needed and thermal management can be handled externally. |
| MMRF1022 | Single-stage GaN HEMT, 2600–2700 MHz only, 12 W avg., 65% PAE, but no on-chip Doherty architecture or input matching. | Suitable for narrowband high-efficiency upgrades where layout space allows external combiner/matching networks. | Choose MMRF1022 only for targeted 2600 MHz band optimization where maximum PAE outweighs integration and thermal simplicity. |
Compared with AFM30500N and MMRF1022, the A3I25X050GNR1 uniquely combines integrated Doherty functionality, on-chip 50 Ω input matching, and factory-calibrated thermal compensation-enabling faster RF design iteration and lower BOM count in 2300–2700 MHz infrastructure applications.
Availability
A3I25X050GNR1 is available at Aetrix Electronics and suitable for macro base station transmitters, small-cell remote radio heads, active antenna systems, and private LTE/5G NR network base units requiring stable component supply and long-term lifecycle support.
Supply support for A3I25X050GNR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies.
The A3I25X050GNR1 belongs to NXP's AIRFAST® RF LDMOS integrated power amplifier family, engineered specifically for energy-efficient, thermally robust cellular infrastructure applications from macro to small-cell deployments.
FAQ
What is the operating voltage range for the A3I25X050GNR1?
The A3I25X050GNR1 is rated for 20–32 Vdc operation, with typical characterization performed at 28 Vdc. Its maximum drain-source voltage (VDSS) is +65 Vdc, and it supports stable performance across the full 20–32 V range-making it compatible with standard base station DC supplies and enabling headroom for transient voltage margins. The A3I25X050GNR1 maintains specified gain, efficiency, and linearity within this window without derating.
Does the A3I25X050GNR1 require external input matching networks?
No, the A3I25X050GNR1 features on-chip 50 Ω input matching with DC blocking, validated across 2300–2700 MHz. This eliminates the need for external matching components such as stubs, capacitors, or transformers in standard 50 Ω system interfaces. The A3I25X050GNR1's RFin pin connects directly to the preceding driver stage or circulator output, simplifying layout and improving repeatability in high-volume manufacturing.
How does the quiescent current thermal compensation work in the A3I25X050GNR1?
The A3I25X050GNR1 integrates a factory-trimmed thermal tracking circuit that dynamically adjusts VGS(C) to maintain stable carrier IDQ = 130 mA over –40 °C to +85 °C, with measured variation of ≤ ±6.5%. This function is enabled via the VGS(C) pin and requires only a 3.6 kΩ gate feed resistor per AN1977/AN1987. The A3I25X050GNR1's built-in compensation avoids manual recalibration and preserves ACLR/EVM across environmental extremes.
What is the maximum average output power the A3I25X050GNR1 delivers in W-CDMA?
The A3I25X050GNR1 delivers up to 8.9 W average output power in single-carrier W-CDMA at 2300 MHz (VDD = 28 Vdc, IDQ(Carrier) = 130 mA, VGS(Peaking) = 3.5 Vdc, PAR = 9.9 dB). At 2600 MHz, it delivers 8.7 W avg. under identical conditions. These values are verified per NXP's characterization test fixtures and represent production-spec guaranteed performance-not just typical data.
Is the A3I25X050GNR1 pin-compatible with the A3I25X050N variant?
Yes-the A3I25X050GNR1 and A3I25X050N share identical pinout, electrical specifications, and functional block diagram; the "GN" suffix denotes gull-wing lead form (OM-400G-8), while "N" indicates straight-lead (OM-400-8). Both use the same die and thermal pad configuration. The A3I25X050GNR1 is fully interchangeable in layouts designed for the A3I25X050N, provided gull-wing solder profile requirements (per AN1907) are followed.
A3I25X050GNR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- OM-400G-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS (Dual)
- Configuration:
- 2 N-Channel
- Frequency:
- 2.3GHz ~ 2.7GHz
- Gain:
- 28.8dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 130 mA
- Power - Output:
- 5.6W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- OM-400G-8
A3I25X050GNR1 FAQ
1.How can I place an order for A3I25X050GNR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for A3I25X050GNR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A3I25X050GNR1 reliable?
The price and inventory of A3I25X050GNR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A3I25X050GNR1 is usually 5 days.
3.What payment methods are accepted for A3I25X050GNR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A3I25X050GNR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for A3I25X050GNR1?
A3I25X050GNR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A3I25X050GNR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A3I25X050GNR1?
For technical support, including A3I25X050GNR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A3I25X050GNR1 requirements.
6.How does Aetrix verify that A3I25X050GNR1 is sourced from the original manufacturer or authorized distributors?
All A3I25X050GNR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A3I25X050GNR1 meets industry standards.
7.What is the process for return or replacement of A3I25X050GNR1?
All A3I25X050GNR1 units undergo pre-shipment inspection (PSI). If there is an issue with A3I25X050GNR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A3I25X050GNR1 part is unused and in its original packaging.
Return procedure for A3I25X050GNR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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