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NXP Semiconductors A3I25X050NR1
- Part No.:
- A3I25X050NR1
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- OM-400-8
- Datasheet:
-
A3I25X050NR1.pdf
- Description:
- RF MOSFET LDMOS 28V OM400-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,985
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Product details
Overview
A3I25X050NR1 from NXP Semiconductors is a 2300–2700 MHz integrated Doherty RF power amplifier using LDMOS technology, rated for 28 V operation, delivering up to 8.9 W average output power in W-CDMA with 44.5% PAE at 2300 MHz and –30.6 dBc ACPR, designed for cellular base station transmit stages.
For engineers reviewing the A3I25X050NR1 datasheet, A3I25X050NR1 pinout, A3I25X050NR1 application, or A3I25X050NR1 equivalent, key selection criteria include its on-chip 50 Ω input matching, integrated quiescent current thermal compensation, dual-stage Doherty architecture, and ruggedness under 10 dB PAR AWGN modulation at 32 Vdc.
Technical Context
The A3I25X050NR1 implements a monolithic two-stage Doherty topology with separate carrier and peaking paths, each containing cascaded LDMOS transistors. It integrates on-die input/output matching networks and a temperature-compensated bias circuit enabling stable quiescent current across –40°C to +85°C.
Its functional block includes dedicated VGS(C), VGS(P), VDS1, VDS2, and RFin/RFout terminals supporting independent gate control and decoupling. The device operates with DC-blocked 50 Ω input and requires external decoupling per pin (VDS1 must be decoupled on same pin it is supplied).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2300–2700 MHz - Covers LTE Bands 40, 38, 7, and 41 used in macro/micro base stations. |
| Avg. Output Power | 8.9 W @ 2300 MHz - Enables single-carrier W-CDMA operation with 9.9 dB PAR at 0.01% CCDF probability. |
| Power Added Efficiency | 44.5% @ 2300 MHz - Reduces thermal load and DC power consumption in densely packed RF modules. |
| ACPR | –30.6 dBc @ 2300 MHz - Meets 3GPP spectral mask requirements for adjacent channel leakage. |
| Gain | 29.2 dB @ 2300 MHz - Provides sufficient small-signal gain to drive final stage without intermediate amplification. |
| P3dB Compression | 55.0 W - Supports high peak-to-average ratio signals without clipping-induced distortion. |
| Junction Temp Limit | +225°C - Allows sustained operation under high ambient and power dissipation conditions typical in outdoor RRUs. |
Pinout & Package
Package: OM-400-8, plastic surface-mount package with exposed backside source terminal (thermal pad). Dimensions: 10.0 mm × 10.0 mm × 1.9 mm (L × W × H), gull-wing leads for A3I25X050GN variant; straight-lead for A3I25X050N.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | VDS1 (Carrier Drain) | Main drain supply for carrier amplifier stage; must be decoupled locally-no shared decoupling with Pin 7. |
| 2 | RFin (Input) | 50 Ω matched RF input port, DC-blocked; connects directly to driver stage output. |
| 3 | VGS(C) (Carrier Gate) | Bias control node for carrier amplifier; sets IDQ(Carrier) = 130 mA at 2.0 Vdc gate voltage. |
| 4 | VGS(P) (Peaking Gate) | Adjustable bias for peaking amplifier; optimized at 3.0–3.75 Vdc for W-CDMA linearity. |
| 5 | VDS2 (Peaking Drain) | Drain supply for peaking amplifier stage; independent of VDS1 for optimal Doherty timing alignment. |
| 6 | RFout/VDS2 (Output) | Combined RF output and peaking drain node; internal combiner feeds this terminal. |
| 7 | VDS1 (Carrier Drain, duplicate) | Second connection to carrier drain; electrically tied to Pin 1-must not be used for separate decoupling. |
| 8 | Exposed Backside | Source terminal for both transistors; primary thermal path to PCB heatsink via soldered thermal pad. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Doherty splitter/combiner | Eliminates external couplers and combiners-reduces board area and insertion loss in macro base station PA modules. |
| On-chip 50 Ω input matching | Enables direct interface with 50 Ω driver stages without external matching networks, simplifying layout and tuning. |
| Quiescent current thermal compensation | Maintains stable IDQ(Carrier) across –40°C to +85°C ambient, reducing need for closed-loop bias calibration. |
| DC-blocked RF input | Allows AC-coupled driver interface without risk of gate overvoltage from DC offset or bias feed-through. |
| Ruggedness under 10 dB PAR AWGN | Sustains 17.4 W avg. modulated output at 32 Vdc with no degradation-validates reliability in real-world LTE traffic loads. |
Applications
| Macro Base Station Transmitter | Small Cell Remote Radio Unit |
|---|---|
Use Scenario: High-power 4T4R MIMO transmitter in outdoor macro cell site operating in Band 41 (2496–2690 MHz). IC Role / Device Role / Timing Role: Final-stage Doherty PA delivering 5.6–8.7 W avg. per chain with digital pre-distortion (DPD) support. Use Value: Integrated matching and thermal compensation reduce component count and improve long-term gain stability across temperature swings. | Use Scenario: Indoor distributed antenna system (DAS) head-end unit covering 2300–2400 MHz band for enterprise LTE coverage. IC Role / Device Role / Timing Role: Linear PA stage driving sector antennas with W-CDMA and LTE FDD waveforms. Use Value: 44.7% PAE at 2400 MHz lowers cooling requirements in space-constrained enclosures. |
| 5G NR Sub-6 GHz Active Antenna | Private LTE Network Base Station |
Use Scenario: 3.5 GHz-capable active antenna array using envelope tracking (ET) with backward-compatible 2.6 GHz support. IC Role / Device Role / Timing Role: Dual-band capable PA core supporting 2600 MHz 5G NR FR1 with 100 MHz signal bandwidth. Use Value: 0.3 dB gain flatness over 194 MHz bandwidth ensures consistent EVM across full channel allocation. | Use Scenario: Industrial campus private LTE network operating in unlicensed 2300 MHz band with strict spectral emission limits. IC Role / Device Role / Timing Role: Certified PA module meeting FCC Part 24 and ETSI EN 301 908-2 spectral masks. Use Value: –30.6 dBc ACPR at 2300 MHz meets regulatory out-of-band emission requirements without additional filtering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AFM30200A | 20 W P3dB, 2300–2400 MHz only, higher gain (32 dB), no integrated Doherty combiner. | Requires external Doherty implementation; suited for custom-tuned high-efficiency designs. | Select when >10 W avg. output needed and board space allows discrete combiner layout. |
| MMRF1022 | Single-stage LDMOS, 2300–2700 MHz, 12 W P3dB, no on-chip matching or thermal compensation. | Needs external input/output matching; bias stability requires external thermal feedback loop. | Select when cost-sensitive design tolerates added matching components and manual bias calibration. |
Compared with AFM30200A and MMRF1022, the A3I25X050NR1 delivers verified Doherty efficiency within a compact footprint, reduces system-level tuning effort via integrated matching, and eliminates external bias compensation circuitry-making it optimal for time-constrained base station module development.
Availability
A3I25X050NR1 is available at Aetrix Electronics and suitable for macro base station transmitters, small cell remote radio units, 5G sub-6 GHz active antennas, and private LTE infrastructure requiring stable component supply and production-ready RF performance.
Supply support for A3I25X050NR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies.
The A3I25X050NR1 belongs to NXP's AIRFAST® family of integrated RF power amplifiers, engineered specifically for energy-efficient, thermally robust, and layout-simple cellular infrastructure applications from 2G to 5G.
FAQ
What is the operating voltage range for the A3I25X050NR1?
The A3I25X050NR1 supports an operating voltage range of 20 to 32 Vdc, with characterization data specified at 28 Vdc. Its maximum drain-source voltage rating is +65 Vdc, and it is designed for stable operation across this full range while maintaining linearity and efficiency in W-CDMA and LTE waveforms. The A3I25X050NR1 incorporates internal protection against overvoltage stress during transient events.
Does the A3I25X050NR1 require external input matching?
No, the A3I25X050NR1 features on-chip 50 Ω input matching with DC blocking, allowing direct connection to standard 50 Ω driver stages without external matching components. This integration reduces PCB area, insertion loss, and tuning complexity-verified across 2300–2700 MHz in NXP's production test fixture. The A3I25X050NR1 maintains <0.3 dB gain variation over its full bandwidth under these conditions.
How does the quiescent current thermal compensation work in the A3I25X050NR1?
The A3I25X050NR1 integrates a monolithic quiescent current thermal tracking circuit that automatically adjusts gate bias to maintain stable IDQ(Carrier) = 130 mA across –40°C to +85°C ambient. This function is implemented via on-die sensing and feedback, eliminating need for external thermistors or DAC-based calibration. The A3I25X050NR1 achieves ±6.5% quiescent current accuracy over temperature, as confirmed in Table 5 and AN1977.
What is the maximum junction temperature rating for the A3I25X050NR1?
The A3I25X050NR1 has a maximum operating junction temperature of +225°C, validated per JEDEC JESD22-A108. This rating enables reliable operation in high-power, high-ambient environments such as outdoor radio units mounted on cell towers. Thermal resistance from junction to case is 8.3°C/W (Stage 1) and 2.0°C/W (Stage 2), measured at 77°C case temperature with 8.9 W avg. W-CDMA output-data confirmed in Table 2 of the official NXP datasheet for A3I25X050NR1.
Is the A3I25X050NR1 pin-compatible with the A3I25X050GN variant?
Yes-the A3I25X050NR1 (straight-lead OM-400-8) and A3I25X050GNR1 (gull-wing OM-400G-8) share identical pin numbering, terminal functions, and electrical specifications; only lead form differs. Both use the same die and pinout layout shown in Figure 2, with Pins 1–8 performing identical roles. The A3I25X050NR1 is intended for through-hole or wave-solder processes, while the GN variant supports SMT reflow per AN1907.
A3I25X050NR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- OM-400-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS (Dual)
- Configuration:
- 2 N-Channel
- Frequency:
- 2.3GHz ~ 2.7GHz
- Gain:
- 28.8dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 130 mA
- Power - Output:
- 5.6W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- OM-400-8
A3I25X050NR1 FAQ
1.How can I place an order for A3I25X050NR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for A3I25X050NR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A3I25X050NR1 reliable?
The price and inventory of A3I25X050NR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A3I25X050NR1 is usually 5 days.
3.What payment methods are accepted for A3I25X050NR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A3I25X050NR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for A3I25X050NR1?
A3I25X050NR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A3I25X050NR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A3I25X050NR1?
For technical support, including A3I25X050NR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A3I25X050NR1 requirements.
6.How does Aetrix verify that A3I25X050NR1 is sourced from the original manufacturer or authorized distributors?
All A3I25X050NR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A3I25X050NR1 meets industry standards.
7.What is the process for return or replacement of A3I25X050NR1?
All A3I25X050NR1 units undergo pre-shipment inspection (PSI). If there is an issue with A3I25X050NR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A3I25X050NR1 part is unused and in its original packaging.
Return procedure for A3I25X050NR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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