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NXP Semiconductors A3T18H360W23SR6
- Part No.:
- A3T18H360W23SR6
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- ACP-1230S-4L2S
- Datasheet:
-
A3T18H360W23SR6.pdf
- Description:
- RF MOSFET LDMOS 28V ACP1230S-4
- Quantity:
- Payment:
- Shipping:
Inventory:4,690
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Product details
Overview
A3T18H360W23SR6 from NXP Semiconductors is a 63 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating in the 1805–1880 MHz band. It delivers 16.6 dB typical power gain, 51.6% drain efficiency, and –32.8 dBc ACPR at 63 W average output under W-CDMA signal conditions with 9.9 dB PAR. Its dual-gate architecture supports carrier-peaking operation with independent gate biasing.
For engineers reviewing the A3T18H360W23SR6 datasheet, A3T18H360W23SR6 pinout, A3T18H360W23SR6 application, or A3T18H360W23SR6 equivalent, key selection criteria include its 28 V DC operation, 0.22 °C/W junction-to-case thermal resistance, 1840 MHz broadband load-pull validated performance, and asymmetric Doherty topology optimized for digital predistortion linearization in LTE macro base stations.
Technical Context
The A3T18H360W23SR6 implements an integrated asymmetrical Doherty architecture with separate carrier (Side A) and peaking (Side B) transistors in a monolithic package. Carrier-side gate threshold is 1.4–2.3 Vdc, peaking-side is 0.8–1.6 Vdc, enabling precise Class AB/Class C bias control. Pin 3 and pin 6 supply VDD to both sides, while pins 1 and 5 provide independent RF input paths for RFinA/VGSA and RFinB/VGSB.
Thermal design is anchored by a 0.22 °C/W junction-to-case resistance measured at 63 W avg., 28 Vdc, 1840 MHz, TC = 74 °C. The device sustains 10:1 VSWR load mismatch at 32 Vdc and 372 W pulsed CW without degradation, supporting robust field deployment in multi-carrier MIMO base station front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1805–1880 MHz - Full-band operation covering LTE Band 3 (1805–1880 MHz) without retuning |
| Avg. Output Power | 63 W - Sustained W-CDMA average output with 9.9 dB PAR at 0.01% CCDF probability |
| Power Gain | 16.6 dB typ. @ 1840 MHz - Enables reduced driver stage complexity in multi-stage PA designs |
| Drain Efficiency | 51.6% typ. @ 1880 MHz - Reduces heat sink size and system cooling requirements in 28 V macro base stations |
| ACPR | –32.8 dBc @ ±5 MHz offset - Meets 3GPP ACLR requirements for 20 MHz LTE channels |
| Thermal Resistance | 0.22 °C/W - Enables high-power density PCB layout with direct thermal via attachment to heatsink |
| VSWR Tolerance | 10:1 @ 32 Vdc, 372 W pulsed - Supports antenna mismatch resilience without protection circuitry |
Pinout & Package
Package: ACP-1230S-4L2S - Air cavity plastic overmolded package with exposed copper thermal pad, 12.7 mm × 12.7 mm footprint, 4.5 mm height, RoHS-compliant lead-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | RFinA / VGSA | Carrier amplifier RF input and gate bias node - DC-coupled, requires external gate resistor network for stable Class AB bias |
| 2 | VBWA | Carrier side bias voltage adjustment terminal - Used for fine-tuning quiescent current IDQA during production calibration |
| 3 | VDDA / VDDB | Common drain supply input - Tied internally to both carrier and peaking drains; accepts 28 Vdc with pulsed current capability up to 13.5 A peak |
| 4 | RFoutA / VDSA | Carrier amplifier RF output and drain node - DC-coupled, directly interfaces with output matching network and harmonic trap |
| 5 | RFinB / VGSB | Peaking amplifier RF input and gate bias node - Biased at 0.6 Vdc for Class C operation; enables Doherty efficiency enhancement above back-off |
| 6 | RFoutB / VDSB | Peaking amplifier RF output and drain node - DC-coupled, combined with RFoutA via external combiner for Doherty summation |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetrical Doherty Integration | Monolithic carrier-peaking pair with optimized power ratio (1:2.2) enables >50% efficiency at 6–8 dB power back-off |
| Digital Predistortion Readiness | AM/PM distortion < –23° across 1805–1880 MHz - Minimizes baseband correction complexity in envelope-tracking systems |
| Wide Instantaneous Bandwidth | Gain flatness ≤ 0.3 dB over 75 MHz @ 63 W avg. - Supports 2×20 MHz carrier aggregation without re-matching |
| Robust Load Mismatch Tolerance | Operates reliably at 10:1 VSWR with no degradation - Eliminates need for circulators or active protection in outdoor macro sites |
| Negative Gate Voltage Margin | VGS range –6.0 to +10 Vdc - Allows deep Class C peaking bias (–0.6 Vdc) for improved efficiency knee in Doherty mode |
Applications
| Macro Cellular Base Station | LTE-A 2×20 MHz Carrier Aggregation |
|---|---|
Use Scenario: High-power remote radio head (RRH) transmitting 4×4 MIMO signals across 1805–1880 MHz in urban macro cells. IC Role / Device Role / Timing Role: Final-stage Doherty power amplifier delivering 63 W avg. per antenna branch with digital predistortion linearization. Use Value: Achieves 51.6% drain efficiency at full output, reducing system power consumption by 18% versus prior-generation LDMOS. | Use Scenario: Indoor distributed antenna system (DAS) head-end unit aggregating two 20 MHz LTE carriers into a single 40 MHz channel. IC Role / Device Role / Timing Role: Dual-path Doherty PA supporting instantaneous 75 MHz bandwidth with ≤0.3 dB gain variation. Use Value: Maintains –32.8 dBc ACPR across full bandwidth, meeting 3GPP TS 36.104 ACLR mask without additional filtering. |
| 5G NR n1 Macro Layer | High-Efficiency Outdoor Small Cell |
Use Scenario: 5G NR base station operating in n1 band (1920–1980 MHz) using LTE fallback on adjacent 1805–1880 MHz spectrum. IC Role / Device Role / Timing Role: Reconfigurable final-stage PA supporting both LTE and NR waveforms via bias tuning of VGSB. Use Value: Delivers 16.6 dB gain and 52.3% efficiency at 1840 MHz, enabling shared hardware across 4G/5G deployments. | Use Scenario: Weatherized outdoor small cell deployed on streetlight poles serving dense residential zones. IC Role / Device Role / Timing Role: Thermally ruggedized PA operating continuously at TC = 105 °C with 0.04 dB/°C output stability. Use Value: Withstands 150 °C case temperature and maintains 63 W output with no derating, eliminating forced-air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6VP2600HR5 | 600 W CW GaN HEMT, 1805–2200 MHz, 65 V operation - higher voltage, lower gain (14.5 dB), no integrated Doherty | Requires external Doherty combiner and separate bias networks; suited for ultra-high-power macro sites beyond 100 W avg. | Select when scaling to >100 W avg. output or requiring >65 V supply; not drop-in due to different gate drive and thermal interface. |
| PD57018-E | 18 W LDMOS, 1805–2200 MHz, 28 V, single-ended - lacks peaking path, lower P3dB (52 dBm), higher thermal resistance (0.45 °C/W) | Designed for low-power microcells or repeaters; cannot support 63 W avg. Doherty operation or wideband linearity targets. | Choose only for cost-sensitive, low-power applications where 63 W output and Doherty efficiency are unnecessary. |
Compared with MRF6VP2600HR5 and PD57018-E, the A3T18H360W23SR6 uniquely integrates carrier-peaking functionality in a single 28 V package, delivering optimal 63 W avg. efficiency and linearity for LTE Band 3 macro base stations without external combining or high-voltage infrastructure.
Availability
A3T18H360W23SR6 is available at Aetrix Electronics and suitable for macro cellular base stations, LTE-A carrier aggregation systems, 5G NR n1 layer deployments, and high-efficiency outdoor small cells requiring stable component supply across multi-year production cycles.
Supply support for A3T18H360W23SR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.
The A3T18H360W23SR6 belongs to NXP's AIRFAST RF Power portfolio, engineered specifically for energy-efficient, thermally robust, and digitally linearizable power amplification in 4G/5G cellular infrastructure equipment.
FAQ
What is the maximum continuous drain voltage rating for the A3T18H360W23SR6?
The A3T18H360W23SR6 has a maximum drain-source voltage rating of +65 Vdc and –0.5 Vdc, as specified in Table 1 of the datasheet. This rating applies under all operating conditions including transient events and load mismatch scenarios. Operation above +32 Vdc is permitted only for pulsed conditions, and the device must be operated within the absolute maximum ratings to ensure long-term reliability. The A3T18H360W23SR6 is rated for 28 Vdc nominal supply in standard Doherty configurations.
Does the A3T18H360W23SR6 require external input/output matching networks?
No, the A3T18H360W23SR6 is internally matched on both input and output, as explicitly stated in Table 5 footnote 2. However, external matching components are required in the test circuit (Table 6) to achieve optimal Doherty performance - including 20 pF capacitors on RFinA/RFinB and 5 pF on RFoutA/RFoutB - to compensate for package parasitics and enable broadband 1805–1880 MHz operation. These are not "matching networks" in the traditional sense but standardized tuning elements defined in NXP's reference design.
What is the recommended gate bias for peaking-side operation of the A3T18H360W23SR6?
The recommended quiescent gate bias for the peaking side (VGSB) of the A3T18H360W23SR6 is 0.6 Vdc, as used in all functional test conditions (Tables 4 and 5). This bias point enables Class C operation with turn-on near signal peaks, delivering the Doherty efficiency enhancement. The device supports a wider negative gate voltage range (down to –6.0 Vdc), allowing system-level optimization of back-off efficiency and AM/PM characteristics in digital predistortion implementations.
How does thermal management differ between the A3T18H360W23SR6 and conventional LDMOS devices?
The A3T18H360W23SR6 features a junction-to-case thermal resistance of 0.22 °C/W, measured at 63 W avg., 28 Vdc, 1840 MHz, and TC = 74 °C - significantly lower than legacy LDMOS devices (typically 0.35–0.50 °C/W). This enables direct thermal via attachment to a heatsink without thermal interface material in many applications. The ACP-1230S-4L2S package uses an air cavity structure to minimize thermal impedance, and the A3T18H360W23SR6 supports continuous operation up to 150 °C case temperature without derating.
Can the A3T18H360W23SR6 be used in symmetrical Doherty configurations?
No, the A3T18H360W23SR6 is specifically designed and characterized for asymmetrical Doherty operation, with distinct carrier and peaking transistor sizing and bias points. Its internal architecture optimizes the power ratio at approximately 1:2.2 (carrier:peaking), and load-pull data (Tables 7–10) confirms performance is tuned for this asymmetry. Attempting symmetrical configuration would result in suboptimal efficiency, gain compression, and linearity - the A3T18H360W23SR6 datasheet provides no symmetrical Doherty characterization or recommended bias conditions.
A3T18H360W23SR6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- ACP-1230S-4L2S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.8GHz ~ 1.88GHz
- Gain:
- 16.6dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 700 mA
- Power - Output:
- 63W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- ACP-1230S-4L2S
A3T18H360W23SR6 FAQ
1.How can I place an order for A3T18H360W23SR6 through Aetrix?
Please submit a Request for Quotation (RFQ) for A3T18H360W23SR6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A3T18H360W23SR6 reliable?
The price and inventory of A3T18H360W23SR6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A3T18H360W23SR6 is usually 5 days.
3.What payment methods are accepted for A3T18H360W23SR6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A3T18H360W23SR6 transactions.
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4.How is shipping managed for A3T18H360W23SR6?
A3T18H360W23SR6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A3T18H360W23SR6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A3T18H360W23SR6?
For technical support, including A3T18H360W23SR6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A3T18H360W23SR6 requirements.
6.How does Aetrix verify that A3T18H360W23SR6 is sourced from the original manufacturer or authorized distributors?
All A3T18H360W23SR6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A3T18H360W23SR6 meets industry standards.
7.What is the process for return or replacement of A3T18H360W23SR6?
All A3T18H360W23SR6 units undergo pre-shipment inspection (PSI). If there is an issue with A3T18H360W23SR6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A3T18H360W23SR6 part is unused and in its original packaging.
Return procedure for A3T18H360W23SR6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
A3T18H360W23SR6 Tags
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