NXP Semiconductors A3T18H400W23SR6

Overview

A3T18H400W23SR6 from NXP Semiconductors is a 71 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating in the 1805–1880 MHz band. It delivers 17.1 dB typical power gain, 53.4% drain efficiency, and –31.6 dBc ACPR at 1840 MHz under W-CDMA single-carrier conditions (28 Vdc, 71 W avg., PAR = 9.9 dB). Its dual-gate architecture supports carrier-peaking operation with independent RFinA/VGSA and RFinB/VGSB inputs.

For engineers reviewing the A3T18H400W23SR6 datasheet, A3T18H400W23SR6 pinout, A3T18H400W23SR6 application, or A3T18H400W23SR6 equivalent, this page provides verified electrical specifications, thermal resistance (0.18 °C/W), ESD ratings (HBM Class 2, CDM Class C3), package dimensions (ACP-1230S-4L2S), and functional test conditions aligned to NXP's Doherty reference fixture.

Technical Context

The A3T18H400W23SR6 integrates two laterally diffused MOSFETs-Carrier (Side A) and Peaking (Side B)-in a monolithic asymmetrical Doherty configuration. Side A features V_GS(th) = 1.3–2.3 Vdc and operates at I_DQA = 300 mA; Side B has V_GS(th) = 0.8–1.8 Vdc and is biased at V_GSB = 0.7 Vdc. Both sides share a common V_DD supply tied across pins 3 and 6.

It supports digital predistortion (DPD) via wide instantaneous bandwidth (75 MHz), low AM/PM distortion (–20° max), and stable gain flatness (0.4 dB over 75 MHz at 71 W avg.). The device withstands 10:1 VSWR load mismatch at 32 Vdc and 468 W pulsed CW output without degradation, enabling robust operation in deployed macrocell infrastructure.

Key Specifications

Pinout & Package

Package: ACP-1230S-4L2S - Air cavity plastic overmolded package with exposed thermal pad, optimized for high-frequency RF performance and thermal dissipation in base station PA modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with A3T18H400W23SR5, the R6 variant offers extended reel life for high-throughput manufacturing; compared with MRF6VP2750HR6, the A3T18H400W23SR6 provides integrated asymmetrical Doherty functionality, eliminating external combiner losses and simplifying layout for Band 3–optimized 71 W systems.

Availability

A3T18H400W23SR6 is available at Aetrix Electronics and suitable for macrocell base station transmitters, LTE Band 3 power amplifier modules, outdoor DAS remote radio heads, and 5G NR sub-6 GHz pre-massive MIMO PA designs requiring stable component supply and long-term lifecycle support.

Supply support for A3T18H400W23SR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies.

The A3T18H400W23SR6 belongs to NXP's AIRFAST® RF Power LDMOS family, engineered specifically for high-efficiency, wideband cellular infrastructure amplifiers operating in licensed spectrum bands from 700 MHz to 3.8 GHz.

FAQ

What is the maximum continuous drain voltage rating for the A3T18H400W23SR6?

The A3T18H400W23SR6 has a maximum drain-source voltage (V_DSS) rating of +65 Vdc and –0.5 Vdc. This rating ensures safe operation under transient voltage spikes and reverse-bias conditions commonly encountered in RF power amplifier circuits. The device must not be operated beyond these limits to prevent permanent gate oxide damage or avalanche breakdown. All functional testing and datasheet performance data assume V_DD = 28 Vdc within this absolute maximum range.

Does the A3T18H400W23SR6 require external input/output matching networks?

No, the A3T18H400W23SR6 is internally matched on both input and output for operation in the 1805–1880 MHz band. NXP specifies that the device is designed for use in a 50 Ω system without external matching components when mounted per the recommended PCB layout and thermal interface. External matching may be added only for narrowband optimization or harmonic suppression, but is not required for baseline Doherty operation per the datasheet test conditions.

What is the thermal resistance (R_θJC) of the A3T18H400W23SR6, and how is it measured?

The A3T18H400W23SR6 has a thermal resistance of 0.18 °C/W from junction to case, measured under specific conditions: case temperature of 73 °C, 71 W average output power, W-CDMA signal, 28 Vdc supply, I_DQA = 300 mA, V_GSB = 0.7 Vdc, and 1840 MHz frequency. This value is derived using the methodology outlined in NXP Application Note AN1955 and reflects real-world thermal performance in a properly heatsinked ACP-1230S-4L2S package mounted with recommended solder reflow profile per AN1908.

Can the A3T18H400W23SR6 operate with separate V_DD supplies for Carrier and Peaking sides?

No - the A3T18H400W23SR6 requires V_DDA and V_VDDB to be tied together and powered by a single DC supply, as explicitly stated in the datasheet (Figure 2 note and Table 5 footnote). Pins 3 and 6 are both designated as V_DD connections and must be shorted externally. Using separate supplies violates the internal biasing architecture and risks unbalanced operation, thermal runaway, or premature device failure.

What ESD protection level does the A3T18H400W23SR6 provide?

The A3T18H400W23SR6 is rated for Human Body Model (HBM) Class 2 (±2 kV) and Charge Device Model (CDM) Class C3 per JESD22-A114 and JESD22-C101 standards. These ratings reflect tested robustness against electrostatic discharge during handling and assembly. While sufficient for standard ESD-safe manufacturing environments, additional board-level protection (e.g., TVS diodes) is recommended in field-deployed systems subject to repeated connector mating cycles or lightning-induced surges.