NXP Semiconductors A3T18H455W23SR6

Overview

A3T18H455W23SR6 from NXP Semiconductors is an asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating in the 1805–1880 MHz band. It delivers 87 W average output power at 29.5 Vdc with 53.5–54.1% drain efficiency and −28.3 to −31.2 dBc ACPR under single-carrier W-CDMA conditions. Its dual-gate architecture supports carrier-peaking operation in digital predistortion systems for LTE macrocell infrastructure.

For engineers reviewing the A3T18H455W23SR6 datasheet, A3T18H455W23SR6 pinout, A3T18H455W23SR6 application, or A3T18H455W23SR6 equivalent, this device requires attention to gate bias sequencing (VGSB = 0.78 Vdc), thermal management (RθJC = 0.14 °C/W), VSWR tolerance (10:1 load mismatch survival), and asymmetric Doherty impedance matching per side (Zload carrier: ~1.0 Ω, peaking: ~2.2 Ω).

Technical Context

This device implements a two-path Doherty architecture with physically separate carrier (Side A) and peaking (Side B) transistors in a monolithic LDMOS die. Carrier-side gate threshold is 1.4–2.2 Vdc (ID = 160 µAdc), while peaking-side threshold is lower at 0.8–1.6 Vdc (ID = 360 µAdc), enabling precise Class AB/Class C bias control. Both sides are internally matched for 50 Ω input/output but require distinct external harmonic tuning due to differing Zload optima: carrier side favors 1.0–1.1 Ω real + reactive loads, peaking side targets 2.2–2.7 Ω.

It operates under pulsed CW or W-CDMA modulation with VDD = 29.5–32 Vdc, IDQA = 590–600 mA quiescent current, and supports digital predistortion via wide instantaneous bandwidth (75 MHz gain flatness ≤ 0.3 dB) and low AM/PM distortion (−27° max across band). Thermal design must accommodate TJ up to +225°C with case temperature TC ≤ +150°C.

Key Specifications

Pinout & Package

Package: ACP-1230S-4L2S - Air-cavity ceramic package with 6-pin leadframe, optimized for RF thermal and electrical performance in macrocell PA modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6VP2600HR6 and AFM905S, A3T18H455W23SR6 delivers best-in-class Doherty efficiency (54.1%) and ACPR (−31.2 dBc) within its native 1805–1880 MHz band, with integrated matching and proven VSWR robustness - making it the optimal choice for new Band 3 macrocell PA designs requiring rapid qualification and field reliability.

Availability

A3T18H455W23SR6 is available at Aetrix Electronics and suitable for cellular infrastructure, macrocell base stations, and private LTE network deployments requiring stable component supply, long lifecycle support, and traceable sourcing for production programs.

Supply support for A3T18H455W23SR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with core expertise in RF power technologies.

A3T18H455W23SR6 belongs to the AIRFAST RF Power LDMOS family, engineered specifically for energy-efficient, high-linearity cellular infrastructure amplifiers operating in licensed sub-6 GHz spectrum.

FAQ

What is the recommended gate bias voltage for the peaking path of A3T18H455W23SR6?

The peaking path (Side B) of A3T18H455W23SR6 requires VGSB = 0.6–0.78 Vdc under typical W-CDMA characterization conditions (VDD = 29.5 Vdc, IDQA = 590 mA). This low gate voltage enables precise Class C operation synchronized with the carrier path for optimal Doherty efficiency. The datasheet specifies VGS(th) for Side B as 0.8–1.6 Vdc at ID = 360 µAdc, confirming suitability for shallow turn-on. Always verify bias stability across temperature using the ΔG = 0.012 dB/°C gain variation spec.

Does A3T18H455W23SR6 require external input/output matching networks?

No, A3T18H455W23SR6 is internally matched for both input and output in the 1805–1880 MHz band, as confirmed in Table 5 footnote 2. This eliminates discrete matching components in standard 50 Ω systems, reducing bill-of-materials and layout complexity. However, harmonic termination networks remain necessary - particularly for the peaking path's 2.2–2.7 Ω optimum Zload - and must be implemented externally per load-pull data in Tables 10–11.

What thermal interface material is recommended for mounting A3T18H455W23SR6?

NXP recommends solder reflow attachment per Application Note AN1908 for A3T18H455W23SR6's ACP-1230S-4L2S package. Conductive epoxy or thermal paste is not advised due to insufficient thermal conductivity and long-term reliability risks. The 0.14 °C/W RθJC value assumes direct solder joint to a copper baseplate or heatsink with ≥2 oz. copper thickness and adequate thermal via density (≥12 vias, 0.3 mm diameter, filled with conductive epoxy).

Can A3T18H455W23SR6 operate with VDD supplied only through pin 3?

Yes - the datasheet explicitly states in Figure 1 note 2 that "Device can operate with VDD current supplied through pin 3 and pin 6." Pins 3 (VDDA/RFoutA) and 6 (VDDB/RFoutB) are electrically tied internally for VDD distribution, allowing single-point DC injection. However, RF output paths remain isolated; thus, external combining networks must preserve port separation to maintain Doherty functionality and prevent instability.

What is the maximum junction temperature rating for A3T18H455W23SR6?

The absolute maximum operating junction temperature (TJ) for A3T18H455W23SR6 is +225°C, as specified in Table 1. This rating applies under continuous wave (CW) operation at TC = 25°C with DC current fed through pins 3 and 6. Derating is required above 25°C ambient case temperature at 0.88 W/°C. For reliable long-term operation in base station applications, NXP recommends limiting TJ to ≤ +180°C using the MTTF calculator referenced in AN1955.