NXP Semiconductors A3T19H455W23SR6

Overview

A3T19H455W23SR6 from NXP Semiconductors is an asymmetrical Doherty RF power LDMOS transistor designed for carrier and peaking path operation in cellular base station power amplifiers. It delivers 81 W average output power at 30 Vdc across 1930–1990 MHz, with 16.5 dB typical power gain and 49.4% drain efficiency at 1960 MHz under W-CDMA single-carrier conditions.

For engineers reviewing the A3T19H455W23SR6 datasheet, A3T19H455W23SR6 pinout, A3T19H455W23SR6 application, or A3T19H455W23SR6 equivalent, this device requires attention to dual-gate biasing (VGSA/VGSB), asymmetric Doherty load-pull tuning, thermal management at TC ≤ 150°C, and compatibility with digital predistortion systems operating at PAR = 9.9 dB.

Technical Context

The A3T19H455W23SR6 integrates two laterally diffused MOSFETs-Carrier (Side A) and Peaking (Side B)-in a monolithic air-cavity package. Its gate threshold voltages differ (VGS(th) = 1.4–2.2 V for Side A; 0.8–1.6 V for Side B), enabling precise Doherty mode control with independent VGSA and VGSB biasing.

It operates with DC supply applied jointly to pins 3 and 6 (VDDA/VDDB tied), while RF inputs (RFinA/RFinB) and outputs (RFoutA/RFoutB) are isolated per path. The device sustains 10:1 VSWR at 32 Vdc and 490 W pulsed CW without degradation, supporting broadband mismatch resilience in deployed macrocell PA stages.

Key Specifications

Pinout & Package

Package: ACP-1230S-4L2S - Air cavity plastic overmolded package with exposed copper thermal pad, optimized for RF grounding and high-power thermal dissipation in base station PA modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with A3T19H455W23SR5, the R6 variant provides double the reel quantity for production continuity; compared with MRF6VP2600HR5, the A3T19H455W23SR6 delivers integrated Doherty functionality, lower system-level component count, and proven W-CDMA/LTE linearity without external combiner design effort.

Availability

A3T19H455W23SR6 is available at Aetrix Electronics and suitable for macrocell base station transmitters, 5G NR active antenna units, remote radio heads, and private LTE infrastructure requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for A3T19H455W23SR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies since the Philips era.

The A3T19H455W23SR6 belongs to NXP's AIRFAST RF Power LDMOS family, engineered specifically for energy-efficient, digitally predistorted cellular infrastructure amplifiers operating in sub-6 GHz licensed bands.

FAQ

What is the maximum continuous drain voltage rating for the A3T19H455W23SR6?

The A3T19H455W23SR6 has a maximum drain-source voltage rating (VDSS) of +65 Vdc and –0.5 Vdc. This rating applies under all operating conditions, including transient VSWR events. Exceeding +65 Vdc risks permanent gate oxide damage, while negative excursions below –0.5 Vdc may induce parasitic turn-on in the body diode. The recommended operating VDD is 30 Vdc, with absolute maximum at 32 Vdc per Table 1.

How is the A3T19H455W23SR6 biased for asymmetrical Doherty operation?

The A3T19H455W23SR6 requires independent DC biasing of its Carrier (Side A) and Peaking (Side B) paths. VGSA is typically set between 2.2–3.0 Vdc to establish IDQA = 540 mA, while VGSB is biased at 0.6 Vdc to maintain the peaking transistor near pinch-off until signal envelope exceeds threshold. Both VDDA (pin 3) and VDDB (pin 6) must be tied together and supplied by a single 30 Vdc source capable of delivering ≥172 W.

Does the A3T19H455W23SR6 require external input/output matching networks?

No-the A3T19H455W23SR6 is internally matched on both input and output per Table 5 note 2. Its 50 Ω-compatible design allows direct integration into standard 50 Ω test fixtures and production PA layouts without discrete matching components. However, fine-tuning networks may still be used to optimize ACPR or efficiency at band edges, particularly for narrowband deployment.

What thermal interface material is recommended for mounting the A3T19H455W23SR6?

NXP recommends solder reflow attachment per Application Note AN1908 for the A3T19H455W23SR6's ACP-1230S-4L2S package. Use high-thermal-conductivity solder (e.g., Sn96.5Ag3.0Cu0.5) with controlled reflow profile to ensure void-free bonding to the copper thermal pad. Thermal grease or phase-change pads are not recommended-they increase RθJC beyond the specified 0.14 °C/W and risk delamination under thermal cycling.

Can the A3T19H455W23SR6 operate reliably at case temperatures above 100°C?

Yes-the A3T19H455W23SR6 is rated for case operating temperature (TC) up to +150°C per Table 1. However, its 81 W average power rating assumes TC ≤ 81°C. At higher case temperatures, output power must be derated linearly: for every 1°C above 81°C, maximum allowable Pout decreases by 0.7 W (from Table 1 derating factor). Operation at TC = 125°C limits safe average output to approximately 49 W.