NXP Semiconductors A3T21H360W23SR6

Overview

A3T21H360W23SR6 from NXP Semiconductors is a 56 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating in the 2110–2200 MHz band. It delivers 16.7 dB typical power gain, 50.7% drain efficiency, and –30.7 dBc ACPR at 2170 MHz under W-CDMA conditions (V_DD = 28 V, P_out = 56 W avg., PAR = 9.9 dB), enabling high-efficiency wideband macrocell PA designs.

For engineers reviewing the A3T21H360W23SR6 datasheet, A3T21H360W23SR6 pinout, A3T21H360W23SR6 application, or A3T21H360W23SR6 equivalent, this device supports digital predistortion (DPD) systems, withstands 10:1 VSWR loads, and integrates dual-gate architecture for carrier/peaking path separation-critical for LTE-A and 5G NR TDD infrastructure deployments.

Technical Context

The A3T21H360W23SR6 implements an integrated asymmetrical Doherty architecture with separate carrier (Side A) and peaking (Side B) LDMOS cells in a single ACP-1230S-4L2S air-cavity package. Its gate threshold voltages differ per side (V_GS(th) = 1.4–2.3 V for carrier; 0.8–1.6 V for peaking), enabling precise Class AB/Class C biasing and dynamic load modulation across 90 MHz instantaneous bandwidth.

Thermal performance is defined by R_θJC = 0.21 °C/W at 56 W avg. output, with junction temperature rated to +225 °C. The device operates with DC coupling on pins 4 and 5, supports dual-V_DD feed via pins 3 and 6 (tied internally), and features internal input/output matching optimized for 50 Ω systems.

Key Specifications

Pinout & Package

Package: ACP-1230S-4L2S - Air-cavity plastic over-molded package with exposed copper thermal slug, 12.3 mm × 12.3 mm footprint, 3.2 mm height, RoHS-compliant lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with AFM360W23SR6 and QPD1025, the A3T21H360W23SR6 offers best-in-class trade-off between integrated Doherty functionality, 5G-ready bandwidth, and plug-and-play 50 Ω matching-reducing time-to-market for Band 1/n1/n41 infrastructure upgrades without redesigning output combiners or bias networks.

Availability

A3T21H360W23SR6 is available at Aetrix Electronics and suitable for macrocell base stations, 5G NR remote radio units, LTE-A carrier aggregation systems, and active antenna system transceivers requiring stable component supply across multi-year telecom equipment production cycles.

Supply support for A3T21H360W23SR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies since the Philips era.

The A3T21H360W23SR6 belongs to NXP's AIRFAST® RF Power portfolio, engineered specifically for energy-efficient, digitally linearized cellular infrastructure amplifiers targeting 4G LTE-Advanced and 5G NR base station applications.

FAQ

What is the maximum continuous drain voltage rating for the A3T21H360W23SR6?

The A3T21H360W23SR6 has a maximum drain-source voltage rating (V_DSS) of +65 Vdc and –0.5 Vdc. This allows safe operation under transient voltage spikes common in RF PA switching events and ensures compatibility with standard 28 V DC power supplies used in macrocell base stations. The device must not be operated beyond these limits to prevent irreversible breakdown.

Does the A3T21H360W23SR6 require external input/output matching networks?

No, the A3T21H360W23SR6 is internally matched for 50 Ω systems on both input and output ports, as confirmed in Table 5 footnote 2 and Figure 1. This eliminates discrete matching components in the RF path, reduces PCB area, and improves repeatability across production units-critical for high-volume RRU manufacturing.

How is thermal management implemented for the A3T21H360W23SR6 in high-power operation?

The A3T21H360W23SR6 uses an ACP-1230S-4L2S package with an exposed copper thermal slug and achieves R_θJC = 0.21 °C/W at 56 W avg. output. Effective thermal design requires low-thermal-resistance mounting (e.g., solder reflow per AN1908) to a heatsink capable of maintaining case temperature ≤ +150 °C under worst-case ambient and airflow conditions.

Can the A3T21H360W23SR6 operate with independent VDD supplies on pins 3 and 6?

No-per Table 5 footnote 1 and Figure 2 note, VDDA and VDDB must be tied together and powered by a single DC supply. Pins 3 and 6 are electrically connected internally to the same drain rail; independent sourcing would cause current imbalance, thermal stress, and potential device failure. A single 28 V, ≥15 A supply is required.

What ESD protection level does the A3T21H360W23SR6 provide?

The A3T21H360W23SR6 is rated Class 2 per JESD22-A114 (Human Body Model) and Class C3 per JESD22-C101 (Charge Device Model), as specified in Table 3. This provides robust handling during assembly and board-level testing but does not eliminate need for standard ESD-safe handling practices in manufacturing environments.