NXP Semiconductors A3T21H450W23SR6

Overview

A3T21H450W23SR6 from NXP Semiconductors is an asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating in the 2110–2200 MHz band. It delivers 87 W average output power at 30 Vdc, achieves 48.9% drain efficiency at 2155 MHz, and maintains –30.2 dBc ACPR under single-carrier W-CDMA with 9.9 dB PAR. Its dual-gate architecture supports carrier-peaking operation in macrocell and massive MIMO active antenna systems.

For engineers reviewing the A3T21H450W23SR6 datasheet, A3T21H450W23SR6 pinout, A3T21H450W23SR6 application, or A3T21H450W23SR6 equivalent, this device requires attention to its 6-pin ACP-1230S-4L2S air-cavity package, gate voltage sequencing (VGSA/Q = 2.2–3.0 Vdc, VGSB = 0.5 Vdc), thermal resistance (R_θJC = 0.16 °C/W), and Doherty-specific biasing constraints including mandatory VDDA/VDDB tie-together and prohibition of VDD current through pins 3 and 6.

Technical Context

This device implements a monolithic dual-gate LDMOS structure with physically separate carrier (Side A) and peaking (Side B) transistors in a single die. The carrier side operates at IDQA = 600 mA quiescent drain current with VGS(th) = 1.4–2.3 Vdc, while the peaking side activates above threshold with VGS(th) = 0.8–1.6 Vdc and is biased at VGSB = 0.5 Vdc for Class C behavior. Both sides share common VDD and are internally input/output matched for 50 Ω systems.

Its asymmetrical Doherty architecture enables wide instantaneous bandwidth (90 MHz) with gain flatness ≤0.7 dB and AM/PM distortion ≤–19° across 2110–2200 MHz. Load-pull data confirms optimized P3dB performance up to 501 W (27.0 dBW) and peak drain efficiency of 69.2% on the carrier side at 2110 MHz under pulsed CW conditions.

Key Specifications

Pinout & Package

The A3T21H450W23SR6 uses the ACP-1230S-4L2S air-cavity ceramic package with 6 leads and integral heat slug. Thermal path is optimized via direct case-to-heatsink contact; no thermal pad reflow required. Pins 4 and 5 are DC-coupled and RF-independent; VDD must be supplied externally to pins 1 and 6 only.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with A3T21H450W23SR6, the R5 variant offers identical RF performance in smaller packaging for validation, while MRF6VP2450HR6 trades Doherty efficiency gains for higher peak power and simpler biasing-making it less suitable for modern wideband, DPD-driven base stations.

Availability

A3T21H450W23SR6 is available at Aetrix Electronics and suitable for macrocell base stations, active antenna systems, remote radio heads, and multi-band combiner PA designs requiring stable component supply and long-term lifecycle support.

Supply support for A3T21H450W23SR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications infrastructure markets.

The A3T21H450W23SR6 belongs to NXP's AIRFAST RF Power portfolio, engineered specifically for energy-efficient, wideband cellular infrastructure amplifiers using advanced Doherty architectures and GaN-compatible packaging.

FAQ

What is the maximum continuous drain voltage rating for the A3T21H450W23SR6?

The A3T21H450W23SR6 has a maximum drain-source voltage rating (V_DSS) of +65 Vdc and –0.5 Vdc. This rating applies to both carrier and peaking sides under static conditions. Operation beyond these limits risks irreversible gate oxide damage or avalanche breakdown. The device is rated for 32 Vdc operating voltage (V_DD), and exceeding this in continuous service reduces MTTF and violates safe operating area constraints defined in the datasheet.

How is the A3T21H450W23SR6 biased for Doherty operation in a typical base station PA?

The A3T21H450W23SR6 requires asymmetric biasing: carrier side (Side A) is biased at V_GSA(Q) = 2.2–3.0 Vdc with I_DQA = 600 mA, while peaking side (Side B) is biased at V_GSB = 0.5 Vdc to achieve Class C turn-on. V_DD must be applied jointly to pins 1 and 6; pins 3 and 6 must never supply V_DD current. The A3T21H450W23SR6 datasheet specifies strict sequencing-V_GSB must be established before V_DD to prevent latch-up.

Does the A3T21H450W23SR6 require external input/output matching networks?

No, the A3T21H450W23SR6 is internally matched for 50 Ω systems on both input and output ports across 2110–2200 MHz. This eliminates discrete matching components in standard base station PA layouts. However, the characterization test circuit (Table 6) includes external capacitors and resistors for stability enhancement and harmonic suppression-not for fundamental impedance transformation. The A3T21H450W23SR6 achieves specified gain and efficiency without external matching when mounted per AN1908 reflow guidelines.

What thermal management guidance applies to the A3T21H450W23SR6 in high-power operation?

The A3T21H450W23SR6 has R_θJC = 0.16 °C/W and a maximum case temperature (T_C) of +150 °C. To maintain T_J ≤ +225 °C at 87 W avg. output, the heatsink must limit thermal resistance to ≤0.85 °C/W (including interface materials). NXP recommends solder-reflow attachment per AN1908 using Sn96.5/Ag3.0/Cu0.5 paste and flatness-controlled copper baseplates. Forced-air cooling is advised above 60 W continuous dissipation.

Can the A3T21H450W23SR6 be used in 5G NR applications?

Yes, the A3T21H450W23SR6 supports 5G NR n1 deployments due to its 2110–2200 MHz coverage, 90 MHz instantaneous bandwidth, and DPD-friendly linearity (ACPR = –30.2 dBc, AM/PM ≤ –19°). Its asymmetrical Doherty architecture delivers >47% efficiency at 6–8 dB power back-off-critical for 5G's variable-envelope waveforms. The A3T21H450W23SR6 has been characterized with W-CDMA and validated for OFDMA signal fidelity, confirming suitability for 5G NR FR1 uplink/downlink PA stages.