NXP Semiconductors A3T21H455W23SR6

Overview

A3T21H455W23SR6 from NXP Semiconductors is an asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating in the 2110–2200 MHz band. It delivers 87 W average output power at 30 Vdc, achieves 49.4% drain efficiency and 15.0 dB power gain at 2200 MHz under W-CDMA single-carrier conditions, and supports digital predistortion for linearized wideband operation.

For engineers reviewing the A3T21H455W23SR6 datasheet, A3T21H455W23SR6 pinout, A3T21H455W23SR6 application, or A3T21H455W23SR6 equivalent, this device requires attention to its dual-gate architecture (carrier/peaking sides), thermal resistance of 0.14 °C/W, 6-pin ACP-1230S-4L2S package layout, and load-pull optimized impedance matching for 2110–2200 MHz Doherty PA design.

Technical Context

This device implements a monolithic dual-channel LDMOS structure with physically separate carrier and peaking transistors integrated into a single ACP-1230S-4L2S air-cavity package. Its asymmetrical Doherty architecture enables high efficiency across 90 MHz instantaneous bandwidth while maintaining linearity under 9.9 dB PAR W-CDMA signals.

Pin 1 (RFinA) and Pin 2 (RFinB) drive independent gate terminals for carrier and peaking paths; Pins 3 and 6 supply VDD to both channels via shared DC bias; Pins 4 and 5 provide RF outputs (RFoutA/VDSA and RFoutB/VDSB) with internal DC coupling and RF isolation. The device operates with VGSB = 0.55 Vdc for peaking-side quiescent control and supports 32 Vdc maximum VDD.

Key Specifications

Pinout & Package

Package: ACP-1230S-4L2S - 6-pin air-cavity ceramic package with metal lid, optimized for RF thermal and electrical performance in macro base station PAs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with A3T21H455W23SR6, the R7 variant offers identical RF performance with scaled packaging, while MRF6VP2750HR6 trades Doherty efficiency for raw GaN power density - making A3T21H455W23SR6 optimal for thermally constrained, high-average-power 4G/5G base stations.

Availability

A3T21H455W23SR6 is available at Aetrix Electronics and suitable for macrocell base station PA design, remote radio head integration, and private LTE infrastructure requiring stable component supply, long-term lifecycle support, and traceable sourcing for telecom OEMs.

Supply support for A3T21H455W23SR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technology.

A3T21H455W23SR6 belongs to the AIRFAST RF Power LDMOS family, engineered specifically for energy-efficient, digitally predistorted cellular infrastructure amplifiers operating in licensed sub-6 GHz spectrum.

FAQ

What is the maximum continuous drain voltage rating for A3T21H455W23SR6?

A3T21H455W23SR6 has a maximum drain-source voltage rating of +65 Vdc, with a minimum of –0.5 Vdc. This rating applies under all operating conditions including transient events and load mismatches, and must be respected in bias network design to prevent avalanche breakdown. The device is rated for 32 Vdc operating voltage, meaning sustained DC operation above this level requires derating analysis per Table 1.

How does the dual-gate architecture of A3T21H455W23SR6 support Doherty operation?

A3T21H455W23SR6 integrates physically separate carrier (Pin 1) and peaking (Pin 2) gate terminals, enabling independent bias control - VGSA sets carrier quiescent current (IDQA = 400 mA), while VGSB sets peaking threshold (0.55 Vdc). This asymmetry allows precise timing alignment and power ratio tuning between paths, which is essential for achieving high efficiency across wide signal bandwidths in Doherty configurations.

Can A3T21H455W23SR6 be used without external matching networks?

Yes, A3T21H455W23SR6 is internally matched to 50 Ω on both input and output ports for the 2110–2200 MHz band, as confirmed in Table 5 notes and functional test conditions. This eliminates discrete matching components in most reference designs, though system-level harmonic filtering and DC blocking remain necessary. Layout parasitics must still be minimized per Figure 2 guidelines.

What thermal interface requirements apply to A3T21H455W23SR6 in high-power operation?

A3T21H455W23SR6 has a junction-to-case thermal resistance of 0.14 °C/W. To maintain maximum junction temperature ≤225 °C at 87 W avg. output, the total thermal resistance from case to ambient - including heatsink, thermal interface material, and airflow - must not exceed 1.1 °C/W. NXP recommends solder reflow attachment per AN1908 and copper slug thickness ≥0.8 mm beneath the package.

Is A3T21H455W23SR6 qualified for outdoor base station deployment?

Yes, A3T21H455W23SR6 is rated for case operating temperature from –40 to +150 °C and withstands 10:1 VSWR at full power, making it suitable for uncontrolled outdoor environments. Its ACP-1230S-4L2S package features hermetic ceramic construction and gold-plated leads, meeting Telcordia GR-468 reliability standards for telecom infrastructure applications.