NXP Semiconductors A3T21H456W23SR6

Overview

A3T21H456W23SR6 from NXP Semiconductors is an asymmetrical Doherty RF power LDMOS transistor optimized for cellular base station amplifiers operating in the 2110–2200 MHz band. It delivers 87 W average output power at 30 Vdc with 49.5% drain efficiency and 15.5 dB power gain at 2170 MHz under W-CDMA signal conditions (PAR = 9.9 dB), supporting digital predistortion and high-VSWR resilience.

For engineers reviewing the A3T21H456W23SR6 datasheet, A3T21H456W23SR6 pinout, A3T21H456W23SR6 application, or A3T21H456W23SR6 equivalent, key selection criteria include its dual-gate Doherty architecture, –6.0 to +10 V gate voltage range, 0.14 °C/W junction-to-case thermal resistance, and validated 10:1 load mismatch tolerance at pulsed 550 W output.

Technical Context

This device implements a monolithic dual-channel LDMOS structure with physically separate carrier (Side A) and peaking (Side B) transistors in a single ACP-1230S-4L2S air-cavity package. Its asymmetrical Doherty configuration enables wide instantaneous bandwidth across 90 MHz while maintaining high efficiency at back-off power levels typical of modern OFDMA and W-CDMA signals.

The A3T21H456W23SR6 integrates internal input/output matching networks and supports independent DC biasing of both gates: VGSA(Q) = 2.6 V (typ.) for the carrier path and VGSB = 0.35 Vdc for the peaking path. Its –20° AM/PM distortion at P3dB and 0.2 dB gain flatness over 90 MHz bandwidth are measured under full 87 W avg. W-CDMA operation.

Key Specifications

Pinout & Package

Package: ACP-1230S-4L2S - air-cavity ceramic/metal flanged package with integrated thermal slug, designed for high-power RF amplifier modules requiring low thermal resistance and hermetic reliability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6V2150N and AFM35H250-100F, the A3T21H456W23SR6 uniquely integrates carrier and peaking paths with validated 10:1 VSWR survival and factory-tuned Doherty bias points-reducing design risk and time-to-market for 5G macro PA modules.

Availability

A3T21H456W23SR6 is available at Aetrix Electronics and suitable for macro base station transmitters, 5G remote radio heads, and W-CDMA multi-carrier amplifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing for Tier-1 infrastructure OEMs.

Supply support for A3T21H456W23SR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with core expertise in RF power technologies since the Philips era.

The A3T21H456W23SR6 belongs to NXP's AIRFAST® family of RF power transistors, engineered specifically for energy-efficient, thermally robust, and digitally linearizable cellular infrastructure PAs operating in sub-6 GHz bands.

FAQ

What is the recommended gate bias configuration for A3T21H456W23SR6 in asymmetrical Doherty mode?

The A3T21H456W23SR6 requires VGSA(Q) = 2.6 V (typ.) for the carrier path and VGSB = 0.35 Vdc for the peaking path under 87 W avg. W-CDMA conditions. These values are validated in NXP's Doherty test fixture and ensure optimal knee point alignment and efficiency at 6 dB back-off. The A3T21H456W23SR6 datasheet specifies that VGSB must remain stable within ±0.05 V to maintain Doherty linearity, and both gates are DC-coupled per Figure 1.

Does A3T21H456W23SR6 require external input/output matching networks?

No, the A3T21H456W23SR6 is internally matched for 50 Ω operation across 2110–2200 MHz, eliminating the need for external matching components in standard PA designs. This is confirmed in Table 5 notes and functional test conditions. However, the A3T21H456W23SR6 test circuit (Figure 2) uses external capacitors for harmonic filtering and DC blocking-these are not impedance-matching elements but serve stability and bias integrity functions.

What is the maximum continuous drain voltage rating for A3T21H456W23SR6?

The A3T21H456W23SR6 has a maximum drain-source voltage rating of +65 Vdc (VDSS), as specified in Table 1. Its recommended operating voltage is 30 Vdc (VDD), with absolute maximum VDD = 32 Vdc. Exceeding 32 Vdc risks permanent damage, and operation above 30 Vdc requires derating per thermal limits. The A3T21H456W23SR6's safe operating area is defined up to 32 Vdc, 87 W avg., and TC ≤ 79°C.

How does A3T21H456W23SR6 handle load mismatch in field deployments?

The A3T21H456W23SR6 is tested and guaranteed to survive 10:1 VSWR at 32 Vdc and 550 W pulsed output power without degradation, per Table 4 load mismatch test conditions. This robustness stems from its lateral LDMOS structure and optimized field plate design. In real-world macro site deployments, the A3T21H456W23SR6 maintains functionality during antenna icing, connector corrosion, or cable faults where VSWR exceeds 3:1-enabling higher system uptime than non-hardened RF transistors.

Is A3T21H456W23SR6 compatible with standard lead-free reflow profiles?

Yes, the A3T21H456W23SR6 is qualified for lead-free solder reflow per JEDEC J-STD-020, with peak temperature up to 260°C. NXP Application Note AN1908 details the recommended 8-step reflow profile, including preheat, soak, ramp-up, and cooling phases specific to the ACP-1230S-4L2S package. The A3T21H456W23SR6's ceramic/metal construction and thermal slug ensure reliable attachment without voiding or delamination when AN1908 guidelines are followed.