NXP Semiconductors A3T23H300W23SR6

Overview

A3T23H300W23SR6 from NXP Semiconductors is a 63 W asymmetrical Doherty RF power LDMOS transistor, N-channel enhancement-mode lateral MOSFET, operating at 2300–2400 MHz with 15.6 dB typical power gain and 49.3% drain efficiency under W-CDMA conditions (V_DD = 30 V, P_out = 63 W Avg., PAR = 9.9 dB). It serves as the final-stage RF power amplifier in cellular base station transmitters.

For engineers reviewing the A3T23H300W23SR6 datasheet, A3T23H300W23SR6 pinout, A3T23H300W23SR6 application, or A3T23H300W23SR6 equivalent, key selection criteria include its 2300–2400 MHz bandwidth, integrated Doherty architecture, –32.7 dBc ACPR at 2400 MHz, thermal resistance of 0.17 °C/W, and ability to withstand 10:1 VSWR under pulsed conditions.

Technical Context

The A3T23H300W23SR6 implements an asymmetrical Doherty topology with separate carrier (Side A) and peaking (Side B) amplifiers, internally matched for 50 Ω input/output. Its gate threshold voltages differ between sides (V_GS(th) = 1.3–2.3 V for Side A; 0.8–1.6 V for Side B), enabling precise Class AB/Class C biasing coordination.

It supports digital predistortion (DPD) via low AM/PM distortion (–18° max across band) and high linearity (–32.7 dBc ACPR at 2400 MHz). Thermal design is enabled by direct case-mounting capability and validated R_θJC = 0.17 °C/W at 63 W average output under W-CDMA modulation.

Key Specifications

Pinout & Package

Package: ACP-1230S-4L2S - air-cavity plastic overmolded package with exposed copper thermal pad (case temperature monitoring point), optimized for high-power RF conduction cooling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6VP2600HR5 and A3T23H300W23SR5, the A3T23H300W23SR6 delivers optimal balance of integration (monolithic Doherty), efficiency (49.3%), and manufacturability (standard 150-unit tape), making it preferred for volume production of 63 W-class LTE/5G base station radios.

Availability

A3T23H300W23SR6 is available at Aetrix Electronics and suitable for cellular infrastructure, massive MIMO active antenna units, and private 5G network deployments requiring stable component supply, long lifecycle support, and traceable sourcing.

Supply support for A3T23H300W23SR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The A3T23H300W23SR6 belongs to NXP's AIRFAST RF Power portfolio, designed specifically for energy-efficient, digitally predistorted cellular base station amplifiers operating in sub-6 GHz bands.

FAQ

What is the maximum junction temperature specification for the A3T23H300W23SR6?

The A3T23H300W23SR6 has a maximum operating junction temperature (T_J) of +225°C, validated under CW conditions at T_C = 25°C with DC current supplied through pins 3 and 6. This rating enables reliable operation in outdoor macro base station environments where ambient temperatures exceed 70°C. The A3T23H300W23SR6 datasheet specifies derating above 25°C at 1.2 W/°C for continuous wave operation.

Does the A3T23H300W23SR6 require external impedance matching networks?

No, the A3T23H300W23SR6 is internally matched for 50 Ω input and output across 2300–2400 MHz, as confirmed in Table 4 and Figure 1 of the official NXP datasheet. External matching is unnecessary for standard Doherty test fixture operation, though narrowband optimization may use minimal tuning components per AN1908 guidelines. The A3T23H300W23SR6 pin connections 1 and 4 serve as DC-coupled RF inputs, eliminating need for DC-blocking capacitors.

How does the A3T23H300W23SR6 support digital predistortion (DPD) linearization?

The A3T23H300W23SR6 supports DPD via low AM/PM distortion (–18° max across 2300–2400 MHz), high gain flatness (0.4 dB over 100 MHz), and stable ACPR performance (–32.7 dBc at 2400 MHz). Its asymmetrical Doherty architecture and separate carrier/peaking bias control (V_GSA(Q) = 2.2–3.0 V, V_GSB = 0.7 V) allow precise envelope tracking alignment. These characteristics are measured in NXP's Doherty test fixture and documented in the A3T23H300W23SR6 datasheet Rev. 0.

What is the thermal resistance (R_θJC) of the A3T23H300W23SR6, and how is it measured?

The A3T23H300W23SR6 has a thermal resistance R_θJC of 0.17 °C/W, measured at T_C = 73°C, 63 W average output, 30 Vdc, I_DQA = 500 mA, V_GSB = 0.7 Vdc, and 2350 MHz using the methodology defined in NXP Application Note AN1955. This value reflects junction-to-case conduction under realistic W-CDMA modulation and validates direct heatsink mounting capability without thermal interface material degradation concerns for the A3T23H300W23SR6.

Is the A3T23H300W23SR6 pin-compatible with other devices in the A3T23H300W23S family?

Yes, the A3T23H300W23SR6 shares identical pinout, package (ACP-1230S-4L2S), and electrical functionality with all variants in the A3T23H300W23S family, including A3T23H300W23SR5 and A3T23H300W23SR7. Differences are limited to tape-and-reel packaging (R5 = 50 units, R6 = 150 units, R7 = 300 units) and do not affect PCB layout, thermal design, or circuit operation. All variants use the same pin connections shown in Figure 1 of the A3T23H300W23SR6 datasheet.