NXP Semiconductors A3T23H450W23SR6

Overview

A3T23H450W23SR6 from NXP Semiconductors is an asymmetrical Doherty RF power LDMOS transistor with N-channel enhancement-mode lateral structure, rated for 87 W average output power at 30 Vdc, operating across 2300–2400 MHz in cellular base station power amplifier stages. It delivers 14.7 dB power gain and 47.0% drain efficiency under W-CDMA single-carrier conditions (PAR = 9.9 dB), with –30.7 dBc ACPR at 2300 MHz.

For engineers reviewing the A3T23H450W23SR6 datasheet, A3T23H450W23SR6 pinout, A3T23H450W23SR6 application, or A3T23H450W23SR6 equivalent, key selection criteria include its dual-gate Doherty architecture, 0.15 °C/W junction-to-case thermal resistance, 2300–2400 MHz instantaneous bandwidth, and ability to withstand 10:1 VSWR under pulsed CW conditions without degradation.

Technical Context

The A3T23H450W23SR6 implements a monolithic two-path Doherty topology with physically separate carrier (Side A) and peaking (Side B) transistors in a single ACP-1230S-4L2S air-cavity package. Gate threshold voltages differ between paths (V_GS(th) = 1.3–2.3 V for Side A; 0.8–1.6 V for Side B), enabling precise bias control for asymmetrical operation.

It features internal input/output matching, DC-coupled RF outputs (pins 4 and 5), and dual-drain supply capability (VDD applied via pins 3 and 6). The device supports digital predistortion (DPD) with measured AM/PM distortion of –21° at P3dB and 0.25 dB gain flatness over 100 MHz bandwidth at 87 W avg.

Key Specifications

Pinout & Package

Package: ACP-1230S-4L2S - air-cavity ceramic/metal flanged package with integrated thermal slug, optimized for RF power dissipation and broadband impedance stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6VP2450HR6 and A3T23H450W23SR5, the A3T23H450W23SR6 offers monolithic Doherty integration and optimized 2300–2400 MHz performance out-of-the-box, reducing design cycle time versus discrete GaN solutions while providing identical functionality to the R5 variant except for packaging quantity.

Availability

A3T23H450W23SR6 is available at Aetrix Electronics and suitable for macro cellular base stations, active antenna systems, 5G NR massive MIMO arrays, and remote radio units requiring stable component supply and long-term lifecycle support.

Supply support for A3T23H450W23SR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, IoT, and communications infrastructure markets.

The A3T23H450W23SR6 belongs to NXP's AIRFAST RF Power portfolio, engineered specifically for energy-efficient, broadband, digitally predistorted cellular base station power amplifiers operating in licensed sub-6 GHz spectrum.

FAQ

What is the maximum continuous drain voltage rating for the A3T23H450W23SR6?

The A3T23H450W23SR6 has a maximum drain-source voltage rating (V_DSS) of +65 Vdc and –0.5 Vdc. This rating applies under all operating conditions and defines the absolute limit for DC biasing of the drain terminals (pins 3 and 6). Exceeding +65 Vdc risks permanent device failure. The A3T23H450W23SR6 is specified for 30 Vdc nominal operation, with a maximum operating voltage (V_DD) of 32 Vdc.

Does the A3T23H450W23SR6 require external input/output matching networks?

No, the A3T23H450W23SR6 is internally matched on both input and output to 50 Ω across 2300–2400 MHz, as confirmed in the datasheet's Functional Tests section and Table 5 notes. External matching is unnecessary for standard 50 Ω system integration, though narrowband optimization may use minimal shunt/stub elements. The A3T23H450W23SR6's integrated matching reduces bill-of-materials count and layout sensitivity compared to unmatched RF transistors.

What is the gate threshold voltage difference between the carrier and peaking paths of the A3T23H450W23SR6?

The A3T23H450W23SR6 exhibits distinct gate threshold voltages: Side A (carrier) has V_GS(th) = 1.3–2.3 Vdc (typ. 1.8 Vdc), while Side B (peaking) has V_GS(th) = 0.8–1.6 Vdc (typ. 1.2 Vdc). This intentional asymmetry enables independent bias control-VGSA(Q) is set to 2.2–3.0 Vdc for 650 mA quiescent current, whereas VGSB is biased at 0.65 Vdc to activate the peaking path only during signal peaks. This differential threshold is fundamental to the A3T23H450W23SR6's Doherty efficiency enhancement.

Can the A3T23H450W23SR6 operate with a single DC supply rail?

Yes, the A3T23H450W23SR6 supports single-rail operation: VDDA (pin 3) and VDDB (pin 6) must be tied together and powered by one 30 Vdc supply, as explicitly stated in Figure 2 note and Table 5 footnote. This simplifies power delivery design and ensures synchronized turn-on of both carrier and peaking paths. The A3T23H450W23SR6's pinout and internal routing are validated for this configuration, eliminating need for dual isolated supplies.

What thermal derating applies to the A3T23H450W23SR6 above 25°C case temperature?

The A3T23H450W23SR6 has a CW power rating of 166 W at T_C = 25°C, derating linearly at 1.0 W/°C above that temperature. At 78°C case temperature (as used in R_θJC measurement), the usable CW power drops to approximately 113 W. This derating is defined in Table 1 and directly impacts thermal design margin-engineers must ensure heatsink interface and airflow maintain T_C ≤ 78°C for sustained 87 W avg. operation. The A3T23H450W23SR6's 0.15 °C/W R_θJC enables accurate junction temperature prediction using T_J = T_C + (P_diss × R_θJC).