NXP Semiconductors A3V07H600-42NR6

Overview

A3V07H600-42NR6 from NXP Semiconductors is an 112 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating from 616 to 870 MHz. It delivers 17.1 dB power gain, 51.8% drain efficiency, and –32.4 dBc ACPR at 768 MHz under W-CDMA single-carrier conditions (48 Vdc, 900 mA IDQA, 112 W avg. output). Its three-terminal architecture supports carrier/peaking path separation in macrocell and massive MIMO remote radio heads.

For engineers reviewing the A3V07H600-42NR6 datasheet, A3V07H600-42NR6 pinout, A3V07H600-42NR6 application, or A3V07H600-42NR6 equivalent, this page provides verified electrical performance across 616–870 MHz, thermal resistance (0.28 °C/W), ruggedness validation (229 W modulated, no degradation), gate threshold voltage (1.0–2.5 Vdc), and package-level ESD ratings (HBM Class 2, CDM Class C3).

Technical Context

The A3V07H600-42NR6 implements a monolithic asymmetrical Doherty architecture with separate carrier (Side A) and peaking (Sides B & C) transistors integrated into a single OM-1230-6L plastic package. It operates in enhancement-mode N-channel configuration with independent gate bias control (VGSB = VGSC) and requires external input matching per production test circuit.

Designed for digital predistortion (DPD) systems, it features wideband linearity support (ACPR down to –39.5 dBc), low AM/PM distortion (–16° max), and stable gain flatness (0.12 dB over 51 MHz bandwidth). Its thermal design targets case temperatures up to +150°C with junction limits of +225°C, validated using NXP's standardized Doherty test fixture.

Key Specifications

Pinout & Package

Package: OM-1230-6L - Thermally enhanced plastic overmolded package with exposed copper backside (source terminal) for direct heatsink attachment. Dimensions: 12.7 mm × 12.7 mm × 4.5 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6VP21K25HR5 and AFM30L050N, the A3V07H600-42NR6 uniquely delivers 112 W avg. Doherty performance in its native 616–870 MHz band with integrated carrier/peaking architecture, eliminating external combiners and enabling higher system efficiency at macrocell power levels.

Availability

A3V07H600-42NR6 is available at Aetrix Electronics and suitable for macrocell base stations, massive MIMO active antenna units, and remote radio heads requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom infrastructure programs.

Supply support for A3V07H600-42NR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with headquarters in Eindhoven, Netherlands.

The A3V07H600-42NR6 belongs to NXP's AIRFAST® RF Power portfolio, engineered specifically for energy-efficient, DPD-ready cellular infrastructure amplifiers operating in sub-1 GHz bands.

FAQ

What is the maximum continuous drain-source voltage rating for the A3V07H600-42NR6?

The A3V07H600-42NR6 has a maximum drain-source voltage rating of +105 Vdc, with a minimum rating of –0.5 Vdc. This rating is specified in Table 1 of the official NXP datasheet (Rev. 0, Aug. 2020) and defines safe operating limits for transient voltage spikes and DC bias conditions in base station PA designs. Exceeding +105 Vdc risks permanent device failure.

Does the A3V07H600-42NR6 require external input matching networks?

No - the A3V07H600-42NR6 is internally input matched for 50 Ω systems, as confirmed in Table 6 and Figure 2 of the NXP datasheet. While the production test circuit includes external capacitors for fine-tuning, the device ships with built-in input matching, reducing component count and layout complexity in commercial base station designs using the A3V07H600-42NR6.

What is the thermal resistance (junction-to-case) of the A3V07H600-42NR6 under typical operating conditions?

The thermal resistance (RθJC) of the A3V07H600-42NR6 is 0.28 °C/W, measured at 88°C case temperature with 112 W avg. W-CDMA output at 48 Vdc, 900 mA IDQA, and 742 MHz (Table 2, NXP datasheet Rev. 0). This value assumes proper solder reflow per AN1907 and direct mounting of the exposed source pad to a heatsink.

Can the A3V07H600-42NR6 be used in TDD (Time Division Duplex) applications?

Yes - the A3V07H600-42NR6 is validated for ruggedness under 10 dB PAR AWGN signals at 229 W modulated output (Table 5), confirming suitability for TDD burst-mode operation. Its wideband linearity, fast thermal response, and –40°C to +150°C case temperature rating make the A3V07H600-42NR6 appropriate for TDD-based private LTE and 5G NR deployments in unlicensed or shared spectrum.

What ESD protection level does the A3V07H600-42NR6 provide?

The A3V07H600-42NR6 meets HBM Class 2 (per JS-001-2017) and CDM Class C3 (per JS-002-2014), as documented in Table 3 of the NXP datasheet. These ratings ensure robustness during automated PCB assembly and field maintenance, reducing risk of latent damage in high-volume telecom manufacturing environments using the A3V07H600-42NR6.