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NXP Semiconductors A3V09H521-24SR6
- Part No.:
- A3V09H521-24SR6
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- -
- Datasheet:
-
A3V09H521-24SR6.pdf
- Description:
- RF MOSFET LDMOS
- Quantity:
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Inventory:6,996
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Product details
Overview
A3V09H521-24SR6 from NXP Semiconductors is a 107 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating in the 720–960 MHz band. It delivers 18.5 dB typical power gain, 53.5% drain efficiency, and –34.7 dBc adjacent channel power ratio at 960 MHz under W-CDMA single-carrier conditions (Pout = 107 W Avg., PAR = 9.9 dB).
For engineers reviewing the A3V09H521-24SR6 datasheet, A3V09H521-24SR6 pinout, A3V09H521-24SR6 application, or A3V09H521-24SR6 equivalent, key selection factors include its dual-gate Doherty architecture, 48 V operation, NI-1230S-4L2L air-cavity package, and support for digital predistortion in macrocell BTS power amplifier stages.
Technical Context
The A3V09H521-24SR6 integrates two laterally diffused MOSFETs-Carrier (Side A) and Peaking (Side B)-in a monolithic asymmetrical Doherty configuration. Its gate threshold voltage is 1.3–2.3 Vdc per side, with quiescent gate voltage VGSA(Q) = 2.0–2.8 Vdc and VGSB = 0.7 Vdc under functional test conditions.
It operates at 48 Vdc drain supply with 800 mA carrier bias current, achieves 661 W P3dB output, and maintains 0.1 dB gain flatness across 40 MHz bandwidth at 107 W average output. Thermal resistance RθJC is 0.37 °C/W at 107 W avg. under W-CDMA modulation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 720–960 MHz - Covers LTE Band 12/13/14/17/18/19/20/26/28 and legacy GSM/UMTS bands. |
| Output Power (Avg) | 107 W @ 940 MHz - Enables high-efficiency macrocell PA stages with >53% drain efficiency. |
| Power Gain | 18.5 dB typ. @ 960 MHz - Reduces driver stage complexity and cascaded gain requirements. |
| ACPR | –34.7 dBc @ ±5 MHz offset - Meets stringent spectral mask requirements for W-CDMA and LTE. |
| Drain Efficiency | 53.5% typ. @ 107 W Avg. - Lowers thermal load and cooling system cost in outdoor BTS cabinets. |
| P3dB Output | 661 W - Provides headroom for peak envelope power handling in asymmetric Doherty operation. |
| Thermal Resistance | 0.37 °C/W - Enables reliable operation up to +150 °C case temperature with standard heatsink design. |
Pinout & Package
Package: NI-1230S-4L2L - Air-cavity ceramic/metal flanged package with integrated thermal slug, optimized for high-power RF amplifier modules and compatible with reflow soldering per AN1908.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | RFinA / VGSA | Carrier amplifier gate input - DC-biased to 2.5 V typ.; requires external matching network for 50 Ω broadband input impedance. |
| 2 | VBWB | Peaking amplifier bias control terminal - sets Class C operating point; fixed at 0.7 Vdc in Doherty configuration. |
| 3 | RFoutA / VDSA | Carrier amplifier drain output - high-current RF node; connected to output combiner and harmonic filtering. |
| 4 | RFinB / VGSB | Peaking amplifier gate input - biased at 0.7 Vdc; activated only during signal peaks to extend back-off efficiency. |
| 5 | RFoutB / VDSB | Peaking amplifier drain output - phase-aligned with carrier output via coupler; contributes to composite Pout above 6 dB back-off. |
| 6 | VBWA | Carrier amplifier bias control terminal - sets quiescent current IDQA = 800 mA; not used for VDD supply routing. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetrical Doherty Architecture | Enables >53% efficiency at 6–10 dB power back-off - critical for modern wideband modulated signals like OFDMA and W-CDMA. |
| Wide Negative VGS Range | VGS = –6.0 Vdc - supports deep Class C peaking operation without gate leakage or reliability degradation. |
| Internally Matched I/O | Reduces external matching component count - simplifies PCB layout and improves repeatability in production PA modules. |
| Digital Predistortion Ready | Low AM/PM distortion (–21° max) and stable gain flatness (0.1 dB over 40 MHz) - ensures linearization convergence in real-time DPD systems. |
| Robust Load Mismatch Tolerance | Withstands 10:1 VSWR at 55 Vdc and 776 W pulsed CW - protects against antenna detuning or cable faults in deployed base stations. |
Applications
| Macrocell Base Station PA | Multi-Band LTE Remote Radio Head |
|---|---|
|
Use Scenario: High-power final-stage amplifier in 4T4R LTE eNodeB supporting Bands 13/17/20/28 in North America and Europe. IC Role / Device Role / Timing Role: Asymmetrical Doherty RF power transistor delivering 107 W average output with DPD correction. Use Value: Achieves 53.5% drain efficiency at 107 W while meeting –34.7 dBc ACPR - reduces power consumption and thermal management cost by ~18% vs. Class AB alternatives. |
Use Scenario: Compact, air-cooled RRH unit operating across 700–960 MHz with dynamic band switching. IC Role / Device Role / Timing Role: Dual-path LDMOS transistor enabling seamless carrier aggregation across low-band LTE channels. Use Value: 0.01 dB/°C gain stability and 0.003 dB/°C output variation over –40°C to +85°C - eliminates need for closed-loop calibration in outdoor deployments. |
| 5G NR Sub-1 GHz Massive MIMO Panel | Private LTE Network Infrastructure |
|
Use Scenario: Transmit chain element in 64T64R mMIMO active antenna system covering 698–960 MHz. IC Role / Device Role / Timing Role: High-efficiency Doherty PA core for analog beamforming subarrays. Use Value: 661 W P3dB headroom enables clean signal transmission under bursty 5G NR UL traffic - maintains EVM < 3.5% at 256-QAM. |
Use Scenario: Industrial-grade private LTE base station for mining, ports, and utilities requiring ruggedized RF front-end. IC Role / Device Role / Timing Role: Mainline RF power device in sealed, fanless BTS enclosure with extended temperature operation. Use Value: Rated for TJ = –40°C to +225°C and TC = –40°C to +150°C - supports continuous operation in uncontrolled ambient environments without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6VP2600HR5 | 600 W P3dB, 28 V operation, symmetrical Doherty, 600–1000 MHz - lower gain (17.2 dB), higher VGS(th) tolerance (1.5–2.5 V). | Targets higher-frequency macrocells (e.g., Band 42/43); less suitable for 720–960 MHz low-band optimization. | Select when system uses 28 V supply rails or requires broader frequency coverage beyond 960 MHz. |
| AFM906S | 90 W avg., 48 V, 700–1000 MHz, symmetrical Doherty - lower P3dB (450 W), higher RθJC (0.45 °C/W), no VBW resonance specification. | Designed for mid-power RRH and small cells; lacks the A3V09H521-24SR6's 107 W avg. capability and tight ACPR performance. | Choose for cost-sensitive, space-constrained designs where full 107 W output is not required. |
Compared with MRF6VP2600HR5 and AFM906S, the A3V09H521-24SR6 offers superior efficiency (53.5% vs. ≤51%) and tighter ACPR (–34.7 dBc) at 107 W in the 720–960 MHz band, making it optimal for low-band macrocell PA stages demanding maximum thermal margin and spectral purity.
Availability
A3V09H521-24SR6 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, massive MIMO panels, and private LTE infrastructure requiring stable component supply and long-term industrial lifecycle support.
Supply support for A3V09H521-24SR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with over 50 years of RF power expertise.
The A3V09H521-24SR6 belongs to NXP's AIRFAST® RF Power portfolio, engineered specifically for energy-efficient, digitally predistorted cellular infrastructure amplifiers operating below 1 GHz.
FAQ
What is the recommended gate bias voltage for the peaking path of the A3V09H521-24SR6?
The A3V09H521-24SR6 peaking path (Side B) is specified for VGSB = 0.7 Vdc under functional test conditions at 48 Vdc drain supply and 107 W average output. This bias enables optimal Class C operation and Doherty efficiency enhancement. The device datasheet confirms this value is validated across the 720–960 MHz band and must be maintained within ±50 mV for consistent ACPR and gain performance. Do not exceed VGS = +10 Vdc or fall below –6.0 Vdc per absolute maximum ratings.
Does the A3V09H521-24SR6 require external input/output matching networks?
Although the A3V09H521-24SR6 is internally matched, external broadband matching networks are required for optimal 50 Ω system integration. The datasheet specifies that both input and output impedances are tuned for 720–960 MHz operation but depend on PCB layout, thermal interface, and surrounding components. Figure 2 shows the reference test circuit with discrete capacitors and resistors; omitting these results in degraded gain flatness, increased ACPR, and reduced P3dB. Matching must be verified using the provided .s2p file and AN1955 thermal methodology.
What is the maximum junction temperature rating for the A3V09H521-24SR6?
The A3V09H521-24SR6 has an operating junction temperature range of –40°C to +225°C, as defined in Table 1 of the official NXP datasheet (Rev. 0, Feb. 2019). This rating applies under continuous RF operation with proper thermal management - including mounting to a heatsink with ≤0.37 °C/W total thermal resistance from junction to ambient. Exceeding +225°C risks irreversible parametric shift and electromigration failure, and MTTF calculators on nxp.com/RF assume this limit for lifetime modeling.
Can the A3V09H521-24SR6 be used in symmetrical Doherty configurations?
No - the A3V09H521-24SR6 is explicitly designed and characterized for asymmetrical Doherty operation, with different quiescent currents (IDQA = 800 mA, IDQB not specified) and gate bias points (VGSA(Q) = 2.5 Vdc, VGSB = 0.7 Vdc). Its internal structure, thermal distribution, and gain compression behavior are optimized for 3:1 power ratio between carrier and peaking paths. Using it in a symmetrical configuration violates the design intent and invalidates all published performance data, including ACPR, efficiency, and P3dB.
Is the A3V09H521-24SR6 RoHS and REACH compliant?
Yes - the A3V09H521-24SR6 complies with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as confirmed in NXP's official product change notifications and material declarations. The NI-1230S-4L2L package uses lead-free terminations and halogen-free molding compounds. Full compliance documentation, including substance declarations and test reports, is accessible via NXP's Quality Portal using the part number A3V09H521-24SR6 and document number A3V09H521-24S.
A3V09H521-24SR6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- *
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- -
- Configuration:
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A3V09H521-24SR6 FAQ
1.How can I place an order for A3V09H521-24SR6 through Aetrix?
Please submit a Request for Quotation (RFQ) for A3V09H521-24SR6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A3V09H521-24SR6 reliable?
The price and inventory of A3V09H521-24SR6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A3V09H521-24SR6 is usually 5 days.
3.What payment methods are accepted for A3V09H521-24SR6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A3V09H521-24SR6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for A3V09H521-24SR6?
A3V09H521-24SR6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A3V09H521-24SR6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A3V09H521-24SR6?
For technical support, including A3V09H521-24SR6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A3V09H521-24SR6 requirements.
6.How does Aetrix verify that A3V09H521-24SR6 is sourced from the original manufacturer or authorized distributors?
All A3V09H521-24SR6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A3V09H521-24SR6 meets industry standards.
7.What is the process for return or replacement of A3V09H521-24SR6?
All A3V09H521-24SR6 units undergo pre-shipment inspection (PSI). If there is an issue with A3V09H521-24SR6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A3V09H521-24SR6 part is unused and in its original packaging.
Return procedure for A3V09H521-24SR6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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