NXP Semiconductors A3V26S004NT6

Overview

A3V26S004NT6 from NXP Semiconductors is a 26 dBm average RF power LDMOS transistor optimized for 5G massive MIMO active antenna systems in cellular base stations, operating across 2496–2690 MHz with 48 V drain supply, 23.3 dB typical power gain, and –37.0 dBc ACPR at 2595 MHz under W-CDMA modulation.

For engineers reviewing the A3V26S004NT6 datasheet, A3V26S004NT6 pinout, A3V26S004NT6 application, or A3V26S004NT6 equivalent, key selection considerations include its DFN 4.5 × 4 mm package, 8.0 °C/W junction-to-case thermal resistance, ruggedness under 10 dB PAR AWGN excitation, and input-matched design eliminating external matching networks in reference circuits.

Technical Context

The A3V26S004NT6 is a single-ended, enhancement-mode LDMOS RF power transistor with gate threshold voltage of 0.7–1.7 Vdc and drain-source on-voltage ≤0.9 Vdc at 75 mA. It operates with 48 Vdc drain bias and 16–17 mA quiescent drain current, delivering 26 dBm average output power in 5G NR and W-CDMA bands.

Its internal input matching enables direct integration into broadband driver stages without discrete matching components. Thermal performance is characterized at 125 °C case temperature, with validated ruggedness under 400 MHz ISBW noise excitation and no degradation at 1.5 W modulated output.

Key Specifications

Pinout & Package

Package: DFN 4.5 × 4 mm plastic package with exposed source pad on backside (thermal interface to PCB ground plane).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with QPD0060 and AFM906S, the A3V26S004NT6 offers optimal balance of size (DFN 4.5×4), gain (23.3 dB), and ruggedness for space-constrained 5G massive MIMO arrays-making it preferred for integrated AAU modules where thermal density and layout simplicity are critical.

Availability

A3V26S004NT6 is available at Aetrix Electronics and suitable for 5G massive MIMO active antenna units, LTE TDD remote radio heads, and private network base stations requiring stable component supply and long-term lifecycle support.

Supply support for A3V26S004NT6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The Airfast RF Power portfolio delivers high-efficiency, thermally robust LDMOS transistors engineered specifically for cellular infrastructure-enabling compact, energy-efficient 4G/5G base station amplifiers.

FAQ

What is the maximum operating drain voltage for the A3V26S004NT6?

The A3V26S004NT6 supports a maximum drain-source voltage (V_DSS) of +105 Vdc, with recommended operating voltage (V_DD) up to 55 Vdc. Its absolute maximum rating allows safe operation at 48 Vdc nominal supply, and the device has been validated for ruggedness at 55 Vdc under 10 dB PAR AWGN stress-making A3V26S004NT6 suitable for high-reliability base station applications where transient overvoltage may occur.

Does the A3V26S004NT6 require external input matching components?

No, the A3V26S004NT6 is internally input matched, as confirmed in the NXP datasheet's "Features" section and reference circuit documentation. This eliminates the need for external input matching networks in standard 50 Ω systems, simplifying PCB layout and reducing component count in 5G active antenna unit designs. The A3V26S004NT6 achieves this via monolithic impedance transformation within the die, enabling direct connection to driver-stage outputs.

What is the thermal resistance (R_θJC) of the A3V26S004NT6, and how is it measured?

The A3V26S004NT6 has a junction-to-case thermal resistance (R_θJC) of 8.0 °C/W, measured under defined conditions: case temperature at 125 °C, 26.0 dBm average output power, W-CDMA modulation, 48 Vdc supply, 17 mA quiescent drain current, and 2595 MHz frequency. This value is validated per AN1955 methodology and reflects performance when the exposed source pad is soldered to a thermally optimized PCB ground plane-critical for thermal management in A3V26S004NT6-based PA modules.

Can the A3V26S004NT6 be used in 5G NR applications beyond the n41 band?

The A3V26S004NT6 is characterized and optimized for 2496–2690 MHz-the full n41 TDD band-but its broadband performance (gain flatness of 0.7 dB over 160 MHz, VBW resonance at 170 MHz) supports adjacent bands such as n38 (2570–2620 MHz) and n7 (2500–2690 MHz). However, full 5G NR compliance (e.g., EVM, ACLR) must be verified per channel bandwidth and modulation scheme in the target band using the A3V26S004NT6 reference circuit or custom matching.

What ESD protection level does the A3V26S004NT6 provide?

The A3V26S004NT6 meets Human Body Model (HBM) Class 1C (≥1 kV) and Charge Device Model (CDM) Class C2a (≥1.25 kV) per JS-001-2017 and JS-002-2014 standards. This ESD robustness ensures reliable handling during automated SMT assembly and field maintenance, aligning with industrial base station manufacturing requirements. The A3V26S004NT6's protection is integrated at the die level and does not require external TVS devices for standard PCB processing.