NXP Semiconductors A5G07H800W19NR3

Overview

A5G07H800W19NR3 from NXP Semiconductors is a 112 W asymmetrical Doherty RF power amplifier based on GaN-on-SiC technology, designed for cellular base station transmit stages in the 717–850 MHz band. It delivers 19.7 dB power gain, 61.2% drain efficiency, and –26.5 dBc ACPR at 758 MHz under W-CDMA modulation, supporting high-power macrocell and massive MIMO active antenna systems.

For engineers reviewing the A5G07H800W19NR3 datasheet, A5G07H800W19NR3 pinout, A5G07H800W19NR3 application, or A5G07H800W19NR3 equivalent, this page provides verified technical context, package mapping to OM-780-4S4S, thermal resistance (RθSC = 0.43 °C/W), ruggedness against 400 MHz ISBW at 174 W modulated output, and bias sequencing guidance for GaN depletion-mode operation.

Technical Context

This GaN HEMT amplifier implements an integrated asymmetrical Doherty architecture with separate carrier and peaking transistors on a single die, enabling wide instantaneous bandwidth across 717–850 MHz while maintaining linearity under high-PAR signals. Its internal matching supports 50 Ω system integration without external tuning networks.

The device operates in depletion mode requiring negative gate bias (VGSB = –5.0 Vdc, VGSA(Q) = –2.6 Vdc typical), with dual independent gate terminals and a common source terminal via the exposed backside metal pad. Thermal management relies on low RθSC (0.43 °C/W) and maximum channel temperature rating of 225 °C.

Key Specifications

Pinout & Package

Package: OM-780-4S4S - 12-pin plastic overmolded package with exposed copper backside acting as common source terminal and primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with A5G07H800W19NR3, A5G07H800W20NR3 offers higher output at the cost of tighter thermal constraints, while AFGA07D065W19NR3 trades bandwidth and ruggedness for lower voltage operation and cost-neither is pin-compatible, and both require board-level redesign.

Availability

A5G07H800W19NR3 is available at Aetrix Electronics and suitable for macrocell base stations, massive MIMO active antenna units, and private LTE infrastructure requiring stable component supply, long-lifecycle support, and traceable GaN RF amplifier sourcing.

Supply support for A5G07H800W19NR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The Airfast RF Power product line delivers high-efficiency GaN amplifiers optimized for cellular infrastructure, with A5G07H800W19NR3 specifically engineered for wideband, high-power 4G/5G base station applications in the 700–800 MHz spectrum.

FAQ

What is the recommended gate bias sequence for A5G07H800W19NR3 during power-up?

The correct biasing sequence for A5G07H800W19NR3 is: (1) set VGSA and VGSB to –5 V, (2) apply nominal VDD (+50 V), (3) increase VGSA until IDQA = 350 mA, (4) adjust VGSB to target bias voltage, then (5) apply RF input. This prevents gate overvoltage and ensures stable Doherty operation. The A5G07H800W19NR3 datasheet specifies this sequence to avoid device degradation during startup.

Does A5G07H800W19NR3 support digital pre-distortion (DPD)?

Yes, A5G07H800W19NR3 supports DPD with measured AM/PM distortion of ≤ –30° across 758–821 MHz, and gain flatness of 0.9 dB over 63 MHz bandwidth at 112 W output. Its linearized EVM performance and low ACPR (–32.8 dBc typical) make it suitable for closed-loop DPD implementation in modern base station transceivers using the A5G07H800W19NR3.

What thermal interface material is recommended for mounting A5G07H800W19NR3?

NXP recommends solder reflow attachment per AN1907 for A5G07H800W19NR3, using high-thermal-conductivity solder (e.g., Sn96.5Ag3.0Cu0.5) directly to a copper heatsink pad. Thermal paste or gap fillers are not recommended - the exposed backside source must be soldered to ensure RθSC = 0.43 °C/W performance and reliability. This mounting method is validated for the A5G07H800W19NR3 package (OM-780-4S4S).

Can A5G07H800W19NR3 operate outside the 717–850 MHz band?

No - the A5G07H800W19NR3 is characterized and performance-guaranteed only within 717–850 MHz. NXP explicitly states there is no guarantee of performance outside this band, and operation at other frequencies may result in degraded gain, efficiency, linearity, or reliability. System designs must constrain RF excitation strictly to this band for the A5G07H800W19NR3.

What is the maximum continuous drain voltage rating for A5G07H800W19NR3?

The absolute maximum drain-source voltage (VDSS) for A5G07H800W19NR3 is 125 Vdc, per Table 4 in the datasheet. However, the recommended operating condition is VDD = 50 Vdc, and the limiting value for operating voltage is 55 Vdc. Exceeding 55 Vdc risks reliability degradation, even if below 125 Vdc - the A5G07H800W19NR3 must be operated within its recommended 50 Vdc nominal and 55 Vdc max limits.