NXP Semiconductors A5G08H800W19NR3

Overview

A5G08H800W19NR3 from NXP Semiconductors is an asymmetrical Doherty RF power amplifier based on gallium nitride (GaN) technology, designed for cellular base station transmit stages in the 865–960 MHz band. It delivers 112 W average output power with 19.5 dB typical gain and 59.9% drain efficiency at 913 MHz under W-CDMA signal conditions, supporting wide instantaneous bandwidth and high VSWR ruggedness.

For engineers reviewing the A5G08H800W19NR3 datasheet, A5G08H800W19NR3 pinout, A5G08H800W19NR3 application, or A5G08H800W19NR3 equivalent, this page provides verified technical context, package mapping, thermal performance data, ruggedness validation, and real-world deployment considerations for macrocell and massive MIMO RF front-end design.

Technical Context

This GaN-based Doherty amplifier integrates carrier and peaking transistors in a single OM-780-4S4S plastic overmolded package with exposed source paddle. Its architecture supports broadband operation across 865–960 MHz using internally matched impedance networks, enabling direct integration into production test fixtures without external matching components.

The device operates as a depletion-mode amplifier requiring precise gate bias sequencing: both gates initialized at –5 V before drain voltage ramp-up, followed by independent adjustment of VGSA (carrier) and VGSB (peaking) to achieve IDQA = 350 mA and target peaking bias. Thermal management relies on low RθSC (IR) = 0.37 °C/W from active die surface to case.

Key Specifications

Pinout & Package

Package: OM-780-4S4S - thermally enhanced plastic overmolded package with exposed copper source paddle on bottom side serving as primary thermal and electrical ground path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with A5G08H800W19NR3, the R3-suffixed variant offers identical RF performance but optimized logistics for SMT placement, while MAAP-090084 trades 4.9% efficiency and reduced VSWR tolerance for LDMOS process familiarity and simplified biasing - making A5G08H800W19NR3 preferable for new 5G-ready infrastructure designs demanding thermal headroom and field reliability.

Availability

A5G08H800W19NR3 is available at Aetrix Electronics and suitable for macrocell base stations, massive MIMO active antenna units, and remote radio head (RRH) systems requiring stable component supply, long-lifecycle support, and traceable GaN sourcing.

Supply support for A5G08H800W19NR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The Airfast RF Power product line delivers high-efficiency GaN and LDMOS amplifiers engineered specifically for cellular infrastructure - emphasizing broadband performance, thermal robustness, and production-ready integration in 4G/5G base station RF front ends.

FAQ

What is the recommended gate bias sequence for A5G08H800W19NR3?

The correct bias sequence for A5G08H800W19NR3 begins with setting both VGGA and VGGB to –5 V, then applying nominal VDDA and VDDB (50 Vdc), followed by increasing VGGA until IDQA reaches 350 mA, and finally adjusting VGGB to its target value (Vt – 2.325 Vdc). This prevents gate overvoltage and ensures proper Doherty alignment. The A5G08H800W19NR3 datasheet specifies this exact sequence to avoid device degradation during power-up.

Does A5G08H800W19NR3 support frequencies outside 865–960 MHz?

No - the A5G08H800W19NR3 is characterized and performance-guaranteed only within the 865–960 MHz band. NXP explicitly states there is no guarantee of performance when used outside this range. Operation at adjacent bands (e.g., 700 MHz or 1800 MHz) is unsupported and may result in degraded gain, efficiency, or reliability. All published specifications for A5G08H800W19NR3 apply strictly to the 865–960 MHz frequency window.

What thermal interface material is recommended for A5G08H800W19NR3?

NXP recommends using a thermally conductive, electrically insulating interface material compatible with the OM-780-4S4S package's exposed copper source paddle. AN1907 specifies solder reflow attach methods using SnAgCu alloy for direct die-attach to copper heatsinks, achieving optimal RθSC (IR) = 0.37 °C/W. For non-soldered interfaces, phase-change thermal pads rated ≥6 W/m·K and compliant with JEDEC J-STD-020 moisture sensitivity level 3 are validated for A5G08H800W19NR3.

Is A5G08H800W19NR3 pin-compatible with earlier revisions like A5G08H800W19N v.2?

Yes - A5G08H800W19NR3 shares identical pin configuration, package outline (OM-780-4S4S), and electrical functionality with all prior versions of A5G08H800W19N, including v.2 and v.1. The R3 suffix denotes only tape-and-reel packaging (250 units, 44 mm width, 13-inch reel); no changes were made to the die, pinout, or performance specifications per revision history in the Rev. 3.0 datasheet dated 13 February 2026.

What is the maximum channel temperature rating for A5G08H800W19NR3?

The maximum channel temperature (TCH) for A5G08H800W19NR3 is 225 °C, as specified in Table 4 (Limiting Values) of the datasheet. This rating is used with RθCHC (FEA) = 0.6 °C/W to estimate MTTF via the Arrhenius model. Operation above 225 °C risks permanent parametric shift or catastrophic failure. The A5G08H800W19NR3 must be mounted with thermal resistance from channel to ambient kept below the limit defined by this rating and expected power dissipation.