NXP Semiconductors A5G18H610W19NR3

Overview

A5G18H610W19NR3 from NXP Semiconductors is an 85 W asymmetrical Doherty RF power GaN amplifier optimized for cellular base station transmitters operating in the 1805–1880 MHz band. It delivers 17.5 dB typical power gain, 55.6% drain efficiency at 1840 MHz, and -34.7 dBc adjacent channel power ratio under W-CDMA modulation with 9.9 dB PAR. Its ruggedized design supports high-VSWR operation and wide instantaneous bandwidth in macrocell and massive MIMO active antenna systems.

For engineers reviewing the A5G18H610W19NR3 datasheet, A5G18H610W19NR3 pinout, A5G18H610W19NR3 application, or A5G18H610W19NR3 equivalent, this page provides verified technical context, thermal resistance data (0.49 °C/W R_θSC), DC biasing sequence, functional test limits, and package-specific layout guidance for production-grade RF front-end design.

Technical Context

This GaN HEMT-based Doherty amplifier integrates carrier and peaking transistors in a single OM-780-4S4S plastic overmolded package with exposed source pad. Its asymmetrical architecture enables optimal broadband linearity across the entire 75 MHz LTE Band 3 frequency span while maintaining high efficiency at back-off power levels.

The device operates as a depletion-mode amplifier requiring precise gate voltage sequencing: V_GSA and V_GSB must be set to -5 V before applying 48 V drain supply, followed by incremental gate bias adjustment to achieve 300 mA carrier quiescent current and target peaking bias. Thermal management relies on direct die-to-case conduction via the exposed source terminal.

Key Specifications

Pinout & Package

Package: OM-780-4S4S - 12-pin plastic overmolded RF power package with thermally enhanced exposed copper source paddle on underside (serves as RF ground and thermal path).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with QPA2211 and AFGA30018, A5G18H610W19NR3 offers superior thermal performance (0.49 °C/W), higher guaranteed efficiency (55.6%), and plastic package cost advantage-making it optimal for high-volume macrocell and massive MIMO deployments where thermal density and bill-of-materials cost are critical.

Availability

A5G18H610W19NR3 is available at Aetrix Electronics and suitable for macrocell base stations, massive MIMO active antenna units, and remote radio heads requiring stable component supply with full traceability and lifecycle continuity.

Supply support for A5G18H610W19NR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications infrastructure markets.

The Airfast RF Power product line delivers GaN-based amplifiers engineered specifically for cellular infrastructure, emphasizing high efficiency, broadband operation, and ruggedness in macrocell, small cell, and active antenna applications.

FAQ

What is the recommended gate biasing sequence for A5G18H610W19NR3?

The correct biasing sequence for A5G18H610W19NR3 begins by setting both carrier and peaking gate voltages to -5 Vdc, then applying 48 Vdc to both drain terminals. Next, increase the carrier gate voltage (V_GSA) until the quiescent current reaches 300 mA, followed by adjusting the peaking gate voltage (V_GSB) to its target value. This sequence prevents device damage and ensures stable Doherty operation. The A5G18H610W19NR3 datasheet specifies this exact procedure in Section "Correct biasing sequence for GaN depletion mode amplifiers."

Does A5G18H610W19NR3 support 5G NR operation in Band 3?

Yes, A5G18H610W19NR3 is fully characterized and guaranteed for operation across 1805–1880 MHz, which aligns with 5G NR n1/n3/n8 allocations in Band 3. Its 75 MHz instantaneous bandwidth, -34.7 dBc ACPR at 1840 MHz, and 85 W average output meet 3GPP TR 38.803 requirements for sub-6 GHz outdoor units. The A5G18H610W19NR3 has been validated with W-CDMA and OFDMA-modulated signals, confirming suitability for 5G NR waveform fidelity.

What is the maximum channel temperature limit for A5G18H610W19NR3?

The maximum channel temperature for A5G18H610W19NR3 is 225 °C, as specified in Table 4 (Limiting Values). This value is used in reliability modeling, including MTTF estimation per AN1955. For thermal design, the recommended case temperature limit is +122 °C, corresponding to the 0.49 °C/W R_θSC measurement condition. Exceeding 225 °C risks permanent degradation of the GaN HEMT structure, and the A5G18H610W19NR3 must be operated within these bounds for production lifetime compliance.

Can A5G18H610W19NR3 be used outside the 1805–1880 MHz band?

No-performance is not guaranteed outside 1805–1880 MHz. The A5G18H610W19NR3 datasheet explicitly states: "There is no guarantee of performance when this part is used in applications designed outside of these frequencies." Its internal matching, Doherty phasing, and thermal design are optimized exclusively for Band 3. Operation at adjacent bands (e.g., 1710–1785 MHz or 1920–1980 MHz) may yield degraded gain flatness, efficiency, or linearity, and is unsupported by characterization data or reliability testing for the A5G18H610W19NR3.

What package variant does A5G18H610W19NR3 use?

A5G18H610W19NR3 uses the OM-780-4S4S package-a 12-pin plastic overmolded RF power package with an exposed copper source paddle on the bottom side. This package is documented in Figures 4–6 of the A5G18H610W19NR3 datasheet and supports high-power RF operation with low thermal resistance (0.49 °C/W R_θSC). The "R3" suffix denotes tape-and-reel packaging: 250 units per reel, 44 mm tape width, 13-inch reel diameter.