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NXP Semiconductors A5G23H065NT4
- Part No.:
- A5G23H065NT4
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- 6-LDFN Exposed Pad
- Datasheet:
-
A5G23H065NT4.pdf
- Description:
- RF MOSFET GAN 48V 6DFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,365
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Product details
Overview
A5G23H065NT4 from NXP Semiconductors is an asymmetrical Doherty RF power GaN amplifier optimized for 5G massive MIMO active antenna systems, delivering 8.8 W average output power across 2300–2400 MHz with 61.7% drain efficiency at 2300 MHz, 17.3 dB power gain, and –27.3 dBc ACPR under W-CDMA modulation.
For engineers reviewing the A5G23H065NT4 datasheet, A5G23H065NT4 pinout, A5G23H065NT4 application, or A5G23H065NT4 equivalent, key selection criteria include guaranteed 2300–2400 MHz band performance, ruggedness under 55 Vdc and 400 MHz instantaneous bandwidth, thermal resistance of 3.9 °C/W (IR), and compatibility with low-complexity linearization architectures.
Technical Context
This GaN HEMT-based Doherty amplifier integrates separate carrier and peaking transistors in a monolithic DFN package, biased using depletion-mode gate control (VGSB = –4.3 Vdc, VGSA(Q) = –2.5 Vdc typical). It operates at 48 Vdc drain supply with quiescent current IDQA = 30 mA and supports wideband modulated signals up to 10 dB PAR.
The device features internally matched 50 Ω input/output ports, high terminal impedances for broadband stability, and is characterized for use in NXP's reference Doherty circuit. Its thermal design targets channel temperature ≤225 °C with RθJC (IR) = 3.9 °C/W and RθCHC (FEA) = 11.5 °C/W under 8.1 W dissipation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2300–2400 MHz - Guaranteed performance band; no specification outside this range. |
| Avg. Output Power | 8.8 W - Delivered under W-CDMA signal (9.9 dB PAR), enabling high-efficiency 5G macro/micro base station stages. |
| Drain Efficiency (ηD) | 61.7% @ 2300 MHz - Reduces thermal load and system-level power consumption in active antenna units. |
| Power Gain (Gps) | 17.3 dB @ 2300 MHz - Enables compact driver-stage architecture with minimal cascaded gain stages. |
| ACPR | –27.3 dBc @ 2300 MHz - Meets 3GPP LTE/5G NR adjacent channel leakage requirements without excessive digital predistortion. |
| VSWR Tolerance | Withstands extremely high output VSWR - Supports robust operation in mismatched antenna array environments. |
| Thermal Resistance RθJC | 3.9 °C/W (IR) - Enables direct thermal coupling to heatsink in compact massive MIMO RF front-end modules. |
Pinout & Package
Package: DFN 7 × 6.5 mm, thermally enhanced plastic surface-mount package with exposed thermal pad. Designed for reflow soldering per AN1907 guidelines and compatible with 16 mm tape width, 13-inch reel (T4 suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain A (Carrier) | RF Power Output Node (Carrier Path) | High-current DC+RF node requiring low-inductance connection to output matching network and heatsink. |
| Drain B (Peaking) | RF Power Output Node (Peaking Path) | Switched path activated above back-off threshold; requires independent bias sequencing and thermal management. |
| Gate A | Carrier Transistor Gate Control | Depletion-mode input; biased at –2.5 Vdc typical; requires stable negative voltage rail with low noise. |
| Gate B | Peaking Transistor Gate Control | Depletion-mode input; biased at –4.3 Vdc; enables precise turn-on timing relative to carrier path. |
| Source A/B | Common RF Ground Reference | Internally tied to thermal pad; must be soldered to large PCB copper pour for RF grounding and heat extraction. |
| Thermal Pad | Case Thermal & Electrical Reference | Electrically connected to source terminals; mandatory solder attachment for thermal performance and RF stability. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetrical Doherty Architecture | Optimizes efficiency across 6–10 dB power back-off range, critical for OFDM-based 5G signals with high PAPR. |
| High Terminal Impedances | Enables broadband impedance matching without external harmonic traps, simplifying PCB layout in multi-band arrays. |
| Wideband Ruggedness | Validated for 400 MHz instantaneous bandwidth at 55 Vdc and 17.6 W modulated output - supports future spectrum expansion. |
| Low AM/PM Distortion | –18° maximum across 2300–2400 MHz - reduces EVM degradation and eases digital linearization effort. |
| ESD Robustness | HBM Class 1A (per JS-001-2017) - withstands handling and board assembly without special precautions. |
Applications
| 5G Massive MIMO Active Antenna Units | Macro Base Station Remote Radio Heads |
|---|---|
|
Use Scenario: Integrated into dual-polarized 64T64R active antenna panels operating in n41 band (2496–2690 MHz adjacent to 2300–2400 MHz). IC Role / Device Role / Timing Role: Final-stage GaN Doherty PA delivering 8.8 W avg. per chain with envelope tracking support. Use Value: Enables >50% drain efficiency at 6 dB back-off while maintaining <–27 dBc ACPR, reducing cooling requirements in sealed outdoor enclosures. |
Use Scenario: Deployed in urban macro cell sites requiring spectral reuse across 2300–2400 MHz TDD-LTE and 5G NR bands. IC Role / Device Role / Timing Role: High-linearity final PA stage in multi-carrier DPD-capable RRH with 100 MHz channel bandwidth. Use Value: Delivers 0.2 dB gain flatness over 100 MHz at 8.8 W avg., minimizing calibration complexity across wide instantaneous bandwidth. |
| Indoor Small Cell Distributed Antenna Systems | Private 5G Campus Networks |
|
Use Scenario: Used in enterprise-grade small cells covering factories or stadiums where space-constrained RF modules require high power density. IC Role / Device Role / Timing Role: Compact, thermally efficient PA core enabling fanless operation in metal-enclosed units. Use Value: 3.9 °C/W RθJC allows direct mounting to aluminum chassis, eliminating need for thermal interface materials or heat pipes. |
Use Scenario: Embedded in private 5G base stations deployed in smart manufacturing facilities with strict EMI and reliability requirements. IC Role / Device Role / Timing Role: Ruggedized RF PA supporting unclipped W-CDMA and 5G NR FR1 waveforms under variable VSWR conditions. Use Value: Withstands extreme output VSWR events common in dynamic industrial antenna environments without performance degradation or latch-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| A5G23H065N | No T4 tape/reel suffix; identical die and electrical specs; differs only in packaging configuration. | Same functional use in production; T4 variant optimized for automated SMT placement with 2500-unit reels. | Select A5G23H065NT4 for high-volume manufacturing; A5G23H065N for prototyping or low-volume builds. |
| AFGA2309-065 | Same Airfast family, but 65 W peak-rated; larger DFN package (9 × 7 mm); higher VDD max (55 V); different bias sequence. | Targeted at higher-power macro base stations; not drop-in due to footprint and thermal interface differences. | Choose A5G23H065NT4 when 8.8 W avg. output and DFN 7 × 6.5 mm form factor are required for dense antenna integration. |
Compared with A5G23H065N, the A5G23H065NT4 offers identical RF performance but adds tape-and-reel logistics for SMT line compatibility; versus AFGA2309-065, it provides lower power density and smaller footprint ideal for massive MIMO subarrays rather than standalone macro PA modules.
Availability
A5G23H065NT4 is available at Aetrix Electronics and suitable for 5G massive MIMO active antenna units, macro base station remote radio heads, and private campus network infrastructure requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for A5G23H065NT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with headquarters in Eindhoven, Netherlands.
The A5G23H065NT4 belongs to NXP's Airfast RF Power portfolio, engineered specifically for energy-efficient, thermally robust, and linear 5G base station amplification in massive MIMO and active antenna systems.
FAQ
What is the guaranteed frequency range for A5G23H065NT4 operation?
The A5G23H065NT4 is characterized and performance-guaranteed exclusively for the 2300–2400 MHz band. Operation outside this range is not specified, and no performance metrics are provided for frequencies below 2300 MHz or above 2400 MHz. Designers must verify system-level behavior if extending beyond this band.
Does A5G23H065NT4 require external matching networks?
No, the A5G23H065NT4 is an internally matched GaN amplifier designed for 50 Ω systems. Its input and output ports are pre-matched to 50 Ω across the 2300–2400 MHz band, eliminating the need for discrete matching components in standard reference designs. However, fine-tuning may be needed for specific PCB stack-ups or thermal conditions.
What is the recommended bias sequence for A5G23H065NT4?
The correct bias sequence for A5G23H065NT4 is: (1) set both gates to –5 V, (2) apply 48 V to both drains, (3) increase VGSA until IDQA = 30 mA, (4) adjust VGSB to –4.3 V, then (5) apply RF input. For shutdown: disable RF, return gates to –5 V, discharge drains to 0 V, then disable gate supplies. This prevents gate overstress and thermal runaway.
How does A5G23H065NT4 handle high VSWR conditions?
The A5G23H065NT4 is explicitly designed to withstand extremely high output VSWR and broadband operating conditions. It has been validated for ruggedness under 400 MHz instantaneous bandwidth at 55 Vdc and 17.6 W modulated output without degradation, making it suitable for active antenna systems where antenna mismatch varies dynamically.
Is A5G23H065NT4 suitable for envelope tracking applications?
Yes, the A5G23H065NT4 supports envelope tracking due to its high gain flatness (0.2 dB over 100 MHz), low AM/PM distortion (–18° max), and fast transient response. Its asymmetrical Doherty architecture maintains efficiency across wide power back-off ranges, aligning with ET system requirements for 5G NR signals with high PAPR.
A5G23H065NT4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- 6-LDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- GaN
- Configuration:
- -
- Frequency:
- 2.3GHz ~ 2.4GHz
- Gain:
- 15.5dB
- Voltage - Test:
- 48 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 30 mA
- Power - Output:
- 8.8W
- Voltage - Rated:
- 125 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-PDFN (7x6.5)
A5G23H065NT4 FAQ
1.How can I place an order for A5G23H065NT4 through Aetrix?
Please submit a Request for Quotation (RFQ) for A5G23H065NT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A5G23H065NT4 reliable?
The price and inventory of A5G23H065NT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A5G23H065NT4 is usually 5 days.
3.What payment methods are accepted for A5G23H065NT4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A5G23H065NT4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for A5G23H065NT4?
A5G23H065NT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A5G23H065NT4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A5G23H065NT4?
For technical support, including A5G23H065NT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A5G23H065NT4 requirements.
6.How does Aetrix verify that A5G23H065NT4 is sourced from the original manufacturer or authorized distributors?
All A5G23H065NT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A5G23H065NT4 meets industry standards.
7.What is the process for return or replacement of A5G23H065NT4?
All A5G23H065NT4 units undergo pre-shipment inspection (PSI). If there is an issue with A5G23H065NT4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A5G23H065NT4 part is unused and in its original packaging.
Return procedure for A5G23H065NT4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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