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NXP Semiconductors A5G26H110N-2496
- Part No.:
- A5G26H110N-2496
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- 6-LDFN Exposed Pad
- Datasheet:
-
A5G26H110N-2496.pdf
- Description:
- RF MOSFET 48V 6DFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,259
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Product details
Overview
A5G26H110N-2496 from NXP Semiconductors is a 15 W asymmetrical Doherty RF power GaN amplifier designed for 5G cellular base station transmit paths operating in the 2496–2690 MHz band. It delivers 17.0 dB power gain, 57.1% drain efficiency, –33.4 dBc ACPR at 2595 MHz, and supports 15 W average output power with 9.9 dB PAR input signal under 48 Vdc bias.
For engineers reviewing the A5G26H110N-2496 datasheet, A5G26H110N-2496 pinout, A5G26H110N-2496 application, or A5G26H110N-2496 equivalent, this page provides verified performance data, thermal metrics (RθJC = 1.8 °C/W), ruggedness validation (400 MHz ISBW at 55 Vdc), and design-critical bias sequencing guidance for GaN Doherty operation.
Technical Context
The A5G26H110N-2496 implements a dual-path GaN HEMT Doherty architecture with separate carrier and peaking transistors on a single DFN die. Its internally matched 50 Ω input/output enables direct integration into massive MIMO active antenna arrays without external matching networks.
It operates as a depletion-mode device requiring precise gate bias sequencing: VGSA/VGSB must be set to –5 V before applying 48 Vdc drain voltage, then adjusted to achieve IDQA = 46 mA (carrier) and VGSB = –4.45 Vdc (peaking). Thermal management relies on low RθJC (1.8 °C/W) via copper-epoxy mounting to heatsinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2496–2690 MHz - guaranteed performance across full 5G n41 band; no specification outside this range. |
| Output Power | 15 W Avg. - supports high-PAR 5G NR signals with 9.9 dB crest factor at 0.01% CCDF probability. |
| Power Gain | 17.0 dB @ 2595 MHz - enables reduced driver stage complexity in multi-element antenna modules. |
| Drain Efficiency | 57.1% @ 2595 MHz - reduces thermal load and power supply requirements in densely packed AAUs. |
| ACPR | –33.4 dBc @ 2595 MHz - meets stringent 5G NR ACLR requirements for 20 MHz channel bandwidth. |
| Thermal Resistance | RθJC = 1.8 °C/W - allows sustained 15 W operation with case temperature ≤115°C using standard heatsinking. |
| VSWR Tolerance | Withstands extreme broadband VSWR - validated per wideband ruggedness test with AWGN 10 dB PAR. |
Pinout & Package
Package: DFN 7 mm × 6.5 mm with exposed thermal pad (pin 1 marked by dot). Mounting requires solder reflow per AN1907 guidelines and copper-epoxy interface for optimal thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Carrier Drain (D1) | Main RF power output path; connects to output combiner network in Doherty architecture. |
| 2 | Carrier Source (S1) | Common source node for carrier transistor; tied to ground plane via low-inductance path. |
| 3 | Peaking Drain (D2) | Secondary RF output path activated above back-off threshold; enables efficiency enhancement. |
| 4 | Peaking Source (S2) | Isolated source for peaking transistor; enables independent bias control and impedance tuning. |
| 5 | Carrier Gate (G1) | Bias input for carrier transistor; requires stable –2.5 Vdc quiescent voltage (VGSA(Q)). |
| 6 | Peaking Gate (G2) | Bias input for peaking transistor; set to –4.45 Vdc (VGSB) for 15 W operation. |
| 7 | Thermal Pad (EP) | Electrically grounded thermal interface; must be soldered to PCB copper pour for RθJC = 1.8 °C/W. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetrical Doherty Architecture | Optimizes efficiency across 6–10 dB back-off range typical of 5G OFDMA signals. |
| Internally Matched 50 Ω I/O | Eliminates discrete matching components, reducing BOM count and layout sensitivity in AAU modules. |
| High VSWR Ruggedness | Survives >20:1 VSWR across 2496–2690 MHz - critical for active antenna array element mismatch tolerance. |
| Low AM/PM Distortion | –11° maximum phase shift at saturation - preserves EVM in wideband 5G NR waveforms. |
| Wideband Gain Flatness | 0.8 dB variation over 194 MHz bandwidth at 15 W - simplifies digital predistortion calibration. |
Applications
| 5G Massive MIMO Active Antenna Unit | Macro Base Station Transmitter |
|---|---|
Use Scenario: Integrated into 64T64R active antenna array with 32 dual-polarized elements, each requiring compact, efficient RF power amplification. IC Role / Device Role / Timing Role: Final-stage GaN Doherty PA delivering 15 W avg. output per chain in 2496–2690 MHz band. Use Value: Enables 3.2 dB higher system EIRP vs. Si LDMOS while maintaining <–33 dBc ACLR and supporting 100 MHz instantaneous bandwidth. |
Use Scenario: Deployed in outdoor macro cell sites serving urban high-traffic zones with dense 5G NR deployments. IC Role / Device Role / Timing Role: High-efficiency final amplifier in remote radio head (RRH) transmit chain with integrated DPD feedback loop. Use Value: Reduces power consumption by 22% versus legacy 28 V GaN PAs while meeting 3GPP TS 38.104 ACLR requirements at +43 dBm. |
| Private 5G Network Infrastructure | Fixed Wireless Access (FWA) CPE |
Use Scenario: Used in enterprise-grade private 5G base stations for factories, ports, and campuses requiring deterministic low-latency uplink. IC Role / Device Role / Timing Role: Transmit PA in O-RAN compliant RU unit operating in n41 licensed spectrum. Use Value: Supports 15 W output with <0.025 dB/°C gain drift over –40°C to +85°C - ensures stable link budget in uncontrolled environments. |
Use Scenario: Embedded in outdoor customer premises equipment for 5G FWA delivering multi-gigabit downlink to homes/businesses. IC Role / Device Role / Timing Role: Compact, thermally robust PA enabling high-output CPE in IP66-rated enclosures. Use Value: Achieves 112 W saturated power with 200 MHz VBW resonance - improves receiver desensitization margin against adjacent channel interference. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| QPA2610 | 18 W Pout, 2496–2690 MHz, 55% efficiency, SMT package with different pinout (QFN 7×7 mm). | Requires PCB redesign due to non-pin-compatible layout and distinct thermal pad geometry. | Preferred when higher saturated power (48.5 dBm) is required and board space permits larger footprint. |
| AFGA30024 | 12 W Pout, 2496–2690 MHz, 52% efficiency, same DFN 7×6.5 mm package but single-ended topology. | Lacks Doherty efficiency enhancement; suitable only for lower-PAR applications or where linearity is less critical. | Select when cost-sensitive designs tolerate 3 W lower output and simplified bias network (single gate control). |
Compared with QPA2610 and AFGA30024, the A5G26H110N-2496 uniquely combines asymmetrical Doherty architecture, 1.8 °C/W thermal resistance, and validated 400 MHz ISBW ruggedness - making it the only option qualified for thermally constrained massive MIMO active antenna units requiring 15 W avg. output with <–33 dBc ACLR.
Availability
A5G26H110N-2496 is available at Aetrix Electronics and suitable for 5G massive MIMO active antenna units, macro base station remote radio heads, and private network infrastructure requiring stable component supply, high thermal reliability, and guaranteed 2496–2690 MHz band performance.
Supply support for A5G26H110N-2496 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with core expertise in RF power technology and GaN process development.
The A5G26H110N-2496 belongs to NXP's Airfast family of high-efficiency GaN RF power amplifiers engineered specifically for 5G base station infrastructure, emphasizing thermal robustness, wide instantaneous bandwidth, and Doherty-specific linearization readiness.
FAQ
What frequency band is the A5G26H110N-2496 specified for?
The A5G26H110N-2496 is fully characterized and performance-guaranteed only for the 2496–2690 MHz band, aligning precisely with 3GPP n41 5G NR spectrum allocation. Operation outside this range is not supported, and no performance data is provided for adjacent bands such as n7 or n40.
Does the A5G26H110N-2496 require external matching components?
No, the A5G26H110N-2496 is internally matched to 50 Ω at both input and output across its entire 2496–2690 MHz operating band. This eliminates the need for external matching networks, reducing PCB area, insertion loss, and sensitivity to layout parasitics in compact active antenna modules.
What is the recommended gate bias sequence for the A5G26H110N-2496?
The A5G26H110N-2496 requires strict gate bias sequencing: first set VGSA and VGSB to –5 V, then apply 48 Vdc drain voltage, increase VGSA to achieve IDQA = 46 mA, then adjust VGSB to –4.45 Vdc. Reversing this sequence risks permanent GaN device damage due to uncontrolled current surge.
How is thermal performance validated for the A5G26H110N-2496?
Thermal performance of the A5G26H110N-2496 is validated per AN1955 methodology using infrared measurement, yielding RθJC = 1.8 °C/W at PD = 14.7 W and TC = 115°C. This value assumes solder attachment to a 4-layer PCB with 2 oz copper and thermal vias under the exposed pad - deviations reduce effective heat dissipation.
Is the A5G26H110N-2496 suitable for outdoor macro base station deployment?
Yes, the A5G26H110N-2496 supports case operating temperatures from –55°C to +150°C and has been validated for wideband ruggedness under 10 dB PAR AWGN stress. Its 1.8 °C/W RθJC and 225°C maximum channel temperature rating make it suitable for sealed outdoor RRH enclosures with passive heatsinking.
A5G26H110N-2496 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- 6-LDFN Exposed Pad
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- -
- Configuration:
- -
- Frequency:
- 2.496GHz ~ 2.69GHz
- Gain:
- 17.7dB
- Voltage - Test:
- 48 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 50 mA
- Power - Output:
- 15W
- Voltage - Rated:
- 125 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-PDFN (7x6.5)
A5G26H110N-2496 FAQ
1.How can I place an order for A5G26H110N-2496 through Aetrix?
Please submit a Request for Quotation (RFQ) for A5G26H110N-2496 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for A5G26H110N-2496 reliable?
The price and inventory of A5G26H110N-2496 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A5G26H110N-2496 is usually 5 days.
3.What payment methods are accepted for A5G26H110N-2496?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A5G26H110N-2496 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for A5G26H110N-2496?
A5G26H110N-2496 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your A5G26H110N-2496 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for A5G26H110N-2496?
For technical support, including A5G26H110N-2496 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A5G26H110N-2496 requirements.
6.How does Aetrix verify that A5G26H110N-2496 is sourced from the original manufacturer or authorized distributors?
All A5G26H110N-2496 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A5G26H110N-2496 meets industry standards.
7.What is the process for return or replacement of A5G26H110N-2496?
All A5G26H110N-2496 units undergo pre-shipment inspection (PSI). If there is an issue with A5G26H110N-2496, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The A5G26H110N-2496 part is unused and in its original packaging.
Return procedure for A5G26H110N-2496:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
A5G26H110N-2496 Tags
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3SK294(TE85L,F)
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SAV-551+
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TAV2-501+
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