NXP Semiconductors A5G26H110NT4

Overview

A5G26H110NT4 from NXP Semiconductors is a 15 W asymmetrical Doherty RF power GaN amplifier designed for cellular base station transmit stages in the 2496–2690 MHz band. It delivers 17.0 dB power gain, 57.1% drain efficiency, –33.4 dBc ACPR, and 8.7 dB output PAR at 2595 MHz under 48 Vdc operation with 15 W average output power - optimized for 5G massive MIMO active antenna systems.

For engineers reviewing the A5G26H110NT4 datasheet, A5G26H110NT4 pinout, A5G26H110NT4 application, or A5G26H110NT4 equivalent, key selection criteria include guaranteed 2496–2690 MHz bandwidth performance, ruggedness under high VSWR, thermal resistance of 1.8 °C/W (IR), DFN 7 × 6.5 mm package compatibility, and bias sequencing requirements for GaN depletion-mode Doherty operation.

Technical Context

This GaN HEMT-based Doherty amplifier integrates separate carrier and peaking transistors in a monolithic DFN package, with independent gate bias control (VGSA, VGSB) and shared drain supply (VDD = 48 Vdc). Its internal matching enables broadband 5G NR TDD operation without external tuning across the full 194 MHz instantaneous bandwidth.

The device operates in depletion mode requiring negative gate bias (–4.45 Vdc typical for peaking side), supports fast CW and modulated W-CDMA signals, and maintains <0.025 dB/°C gain variation from –40°C to +85°C. Thermal design relies on direct die-to-case conduction via exposed thermal pad, validated per AN1955 infrared methodology.

Key Specifications

Pinout & Package

Package: DFN 7 mm × 6.5 mm with exposed thermal pad (pin 1 marked by dot). Designed for surface-mount reflow per AN1907 guidelines; solder mask opening and stencil design specified in Figures 5–7 of datasheet Rev. 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with QPA2610, A5G26H110NT4 offers smaller DFN footprint and lower gate drive complexity but trades 3 W output and ~3% efficiency; versus A5G26H120NT4, it provides identical performance within a narrower, more tightly validated 2496–2690 MHz band - reducing qualification scope for Band 41-focused deployments.

Availability

A5G26H110NT4 is available at Aetrix Electronics and suitable for 5G massive MIMO active antenna units, sub-6 GHz TDD base station transmitters, and ruggedized outdoor macro base stations requiring stable component supply, traceable lot control, and long-term lifecycle support.

Supply support for A5G26H110NT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The Airfast RF Power product line delivers GaN and LDMOS amplifiers engineered specifically for cellular infrastructure - emphasizing broadband performance, thermal efficiency, and ruggedness in 5G base station applications.

FAQ

What is the guaranteed frequency range for A5G26H110NT4?

The A5G26H110NT4 is fully characterized and performance-guaranteed across 2496–2690 MHz. Operation outside this band is not validated; NXP explicitly states no performance guarantee applies for frequencies beyond these limits, including 2700 MHz and above.

Does A5G26H110NT4 require external matching components?

No - the A5G26H110NT4 is internally matched for 50 Ω input and output across its entire 2496–2690 MHz band. The datasheet confirms it is an "internally matched part" (Table 11), eliminating the need for external tuning stubs or lumped elements in standard reference designs.

What is the recommended gate bias sequence for A5G26H110NT4?

The A5G26H110NT4 requires strict bias sequencing due to its GaN depletion-mode architecture: first set both gates to –5 V, then apply 48 Vdc drain voltage, then ramp VGSA to achieve IDQA = 46 mA, then set VGSB to –4.45 Vdc. Reverse order is required for shutdown to prevent device damage.

Is A5G26H110NT4 suitable for outdoor macro base station deployment?

Yes - the A5G26H110NT4 supports case temperatures from –55°C to +150°C and withstands extreme VSWR conditions without degradation. Its 1.8 °C/W RθJC and ruggedness under 400 MHz ISBW at 55 Vdc make it appropriate for sealed outdoor cabinets with thermal cycling and antenna mismatch exposure.

What thermal measurement standard applies to A5G26H110NT4's RθJC value?

The 1.8 °C/W RθJC value for A5G26H110NT4 is measured per AN1955 - NXP's standardized infrared methodology for RF power amplifiers. This value is validated using the NXP reference circuit and is intended for heatsink sizing; reliability analysis instead uses the FEA-derived RθCHC of 6.2 °C/W.