NXP Semiconductors A5G26H605W19NR3

Overview

A5G26H605W19NR3 from NXP Semiconductors is an 85 W asymmetrical Doherty RF power GaN amplifier optimized for cellular base station transmitters operating in the 2496–2690 MHz band. It delivers 15.1 dB power gain, 52.5% drain efficiency, and –30.0 dBc ACPR at 2620 MHz under W-CDMA modulation with 9.9 dB PAR, enabling high-efficiency macrocell and massive MIMO active antenna systems.

For engineers reviewing the A5G26H605W19NR3 datasheet, A5G26H605W19NR3 pinout, A5G26H605W19NR3 application, or A5G26H605W19NR3 equivalent, key selection criteria include guaranteed 2496–2690 MHz bandwidth compliance, 48 Vdc operation, 0.36 °C/W source-to-case thermal resistance, ruggedness to high VSWR, and plastic OM-780-4S4S package suitability for high-power RF front-end designs.

Technical Context

This GaN-on-SiC amplifier integrates carrier and peaking transistors in a single asymmetrical Doherty architecture with internal broadband matching. Its depletion-mode GaN HEMT structure requires negative gate bias (–5.4 Vdc on peaking side, –2.7 Vdc quiescent on carrier side) and strict bias sequencing to ensure reliability and linearity.

It operates with fixed 48 Vdc drain supply and supports wide instantaneous bandwidth via high terminal impedances and advanced in-package Doherty combining. Thermal performance is characterized using infrared measurement (RθSC = 0.36 °C/W) and finite element analysis (RθCHC = 1.3 °C/W carrier, 1.0 °C/W peaking), enabling accurate channel temperature prediction up to 225 °C maximum.

Key Specifications

Pinout & Package

Package: OM-780-4S4S - Thermally enhanced plastic overmolded package with exposed backside source terminal for low-inductance grounding and efficient heat transfer to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with QPA2610, A5G26H605W19NR3 delivers +10 W output and +10.5 percentage points drain efficiency but requires stricter gate bias control; versus A5G26H605W20NR3, it offers identical RF performance with larger 250-unit reels for production scalability.

Availability

A5G26H605W19NR3 is available at Aetrix Electronics and suitable for macrocell base stations, massive MIMO active antenna units, and private 5G network infrastructure requiring stable component supply, long-lifecycle support, and traceable GaN sourcing.

Supply support for A5G26H605W19NR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies.

A5G26H605W19NR3 belongs to the Airfast family of GaN RF power amplifiers, engineered specifically for next-generation cellular infrastructure demanding high efficiency, wide instantaneous bandwidth, and field-proven ruggedness in outdoor deployments.

FAQ

What is the recommended gate bias sequence for A5G26H605W19NR3?

The correct bias ON sequence for A5G26H605W19NR3 is: (1) set VGSA and VGSB to –5 V, (2) apply nominal VDDA and VDDB (48 Vdc), (3) increase VGSA until IDQA = 300 mA, (4) adjust VGSB to target bias (–5.4 Vdc), then (5) apply RF input. This prevents gate overvoltage and ensures stable Doherty operation. The A5G26H605W19NR3 datasheet specifies this sequence to avoid device degradation.

Does A5G26H605W19NR3 support 5G NR signals with 100 MHz bandwidth?

Yes, A5G26H605W19NR3 is characterized for 400 MHz instantaneous bandwidth under AWGN excitation and maintains linear performance across its full 2496–2690 MHz band. At 2655 MHz, it achieves –31.0 dBc ACPR with 9.9 dB PAR, meeting 5G NR 100 MHz channel requirements when paired with DPD. The A5G26H605W19NR3 reference circuit validates this capability.

What thermal interface material is recommended for A5G26H605W19NR3 mounting?

NXP recommends solder attachment for the exposed backside source terminal of A5G26H605W19NR3 using reflow profiles compliant with AN1907. Conductive epoxy or thermal paste is not advised due to higher thermal resistance; solder ensures the specified 0.36 °C/W RθSC (IR) is achieved. The A5G26H605W19NR3 package outline (OM-780-4S4S) defines solder pad dimensions for optimal heat transfer.

Is A5G26H605W19NR3 pin-compatible with earlier Airfast GaN PAs like A5G26H605W18NR3?

No, A5G26H605W19NR3 is not pin-compatible with A5G26H605W18NR3. While both use OM-780-4S4S packaging, the pin configuration differs: A5G26H605W19NR3 separates VDDA/VDDB and VGGA/VGGB terminals for independent bias control, whereas A5G26H605W18NR3 uses shared drain and gate connections. PCB redesign is required when substituting A5G26H605W19NR3.

What is the maximum channel temperature limit for continuous operation of A5G26H605W19NR3?

The maximum channel temperature (TCH) for A5G26H605W19NR3 is 225 °C, as defined in the limiting values table. Reliability modeling uses RθCHC (FEA) = 1.3 °C/W (carrier) and 1.0 °C/W (peaking) to estimate MTTF. Operation above this limit risks irreversible degradation; the A5G26H605W19NR3 thermal characteristics section mandates case temperature monitoring to maintain safe channel temperatures.