NXP Semiconductors A5G26S004NT6

Overview

A5G26S004NT6 from NXP Semiconductors is a 24 dBm GaN RF power transistor designed for 5G massive MIMO active antenna systems in cellular base stations, operating across 2300–2690 MHz with 48 Vdc drain supply, 10 mA quiescent drain current, and optimized broadband linearity for W-CDMA and OFDM signals.

For engineers reviewing the A5G26S004NT6 datasheet, A5G26S004NT6 pinout, A5G26S004NT6 application, or A5G26S004NT6 equivalent, this page delivers verified DC/RF performance data, thermal resistance values, gate biasing sequence guidance, DFN package layout constraints, and validated alternatives for 2.6 GHz 5G infrastructure amplifier design.

Technical Context

This depletion-mode GaN HEMT operates with VGS(Q) = –2.5 V (typ) at IDQ = 10 mA and VDD = 48 Vdc, requiring strict gate bias sequencing: pinch-off voltage (–5 V) applied before VDS ramp-up to avoid gate overvoltage. Its internally matched design eliminates external input matching networks for 2515–2675 MHz operation.

Thermal management relies on RθJC(IR) = 9.5 °C/W (infrared measurement) and RθCHC(FEA) = 32 °C/W, with maximum channel temperature limited to 225 °C. Wideband ruggedness is confirmed at 400 MHz ISBW under 55 Vdc and 0.64 W modulated output with no degradation.

Key Specifications

Pinout & Package

Package: DFN 4.5 × 4 mm with exposed source pad on underside. Thermal path requires direct solder attachment to copper pour for RθJC = 9.5 °C/W performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with A5G26S004NT6, QPD0060 trades 48 V compatibility and 24 dBm linearity for lower-voltage flexibility, while AFGA26025 extends saturated power by 3.5 dB at the cost of 3× larger footprint and higher thermal mass - making A5G26S004NT6 optimal for space-constrained 2.6 GHz massive MIMO TRX modules.

Availability

A5G26S004NT6 is available at Aetrix Electronics and suitable for 5G massive MIMO active antenna units, 2.6 GHz LTE-A Pro base station transmitters, and W-CDMA Band 7 infrastructure upgrades requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for A5G26S004NT6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

A5G26S004NT6 belongs to the Airfast RF Power portfolio, engineered specifically for energy-efficient, broadband, high-linearity amplification in 5G NR and LTE-Advanced base station infrastructure.

FAQ

What is the correct gate biasing sequence for A5G26S004NT6?

The A5G26S004NT6 is a depletion-mode GaN HEMT requiring precise turn-on/turn-off sequencing. To turn ON: apply –5 V VGS first, then ramp VDS to +48 Vdc, adjust VGS to –2.5 V to set 10 mA IDQ, then apply RF. To turn OFF: remove RF, return VGS to –5 V, discharge VDS to 0 V, then disable VGS. This prevents gate overvoltage and ensures reliability.

Does A5G26S004NT6 require external input matching?

No, A5G26S004NT6 is an internally matched GaN transistor. Its input impedance is optimized for 50 Ω across 2300–2690 MHz, eliminating the need for external input matching networks in standard reference designs. Output matching remains application-specific and is implemented externally per system PA architecture.

What thermal resistance value should be used for reliability analysis of A5G26S004NT6?

For reliability analysis including MTTF estimation, use RθCHC(FEA) = 32 °C/W - the finite element analysis-derived channel-to-case thermal resistance. This value is specified for reliability modeling and maximum channel temperature calculation, whereas RθJC(IR) = 9.5 °C/W applies to infrared-measured junction-to-case performance under defined test conditions.

Can A5G26S004NT6 replace legacy LDMOS devices in Band 7 infrastructure?

Yes, A5G26S004NT6 is a validated replacement for Band 7 (2500–2570 MHz) LDMOS PAs. At 2595 MHz, it delivers 19.6 dB gain and 20.5 % drain efficiency versus typical LDMOS values of 16.5 dB and 16.2 %, enabling higher output power or reduced cooling requirements without changing PCB layout - provided gate drive and protection circuitry accommodate its –2.5 V VGS(Q).

What is the moisture sensitivity level (MSL) rating for A5G26S004NT6?

A5G26S004NT6 has a JESD22-A113/JEDEC J-STD-020 MSL rating of Level 3, with a floor life of 168 hours at ≤30 °C/60 % RH. The maximum package peak reflow temperature is 260 °C. Post-moisture exposure, baking per IPC/JEDEC standards is required before reflow to prevent popcorn cracking of the DFN 4.5 × 4 mm plastic package.