NXP Semiconductors A5G35H110N-3400

Overview

A5G35H110N from NXP Semiconductors is a 15.1 W asymmetrical Doherty RF power GaN amplifier designed for 5G massive MIMO active antenna systems in cellular base stations, operating across 3300–3700 MHz with 57.6% drain efficiency at 3300 MHz, 14.8 dB power gain, and –27.9 dBc ACPR under W-CDMA modulation.

For engineers reviewing the A5G35H110N datasheet, A5G35H110N pinout, A5G35H110N application, or A5G35H110N equivalent, this page delivers verified specifications, thermal performance data, ruggedness validation under 400 MHz ISBW at 55 Vdc, bias sequencing guidance, and real-world design context for 3.5 GHz 5G infrastructure deployment.

Technical Context

The A5G35H110N implements a dual-path GaN-on-SiC Doherty architecture with separate carrier and peaking transistors, internally matched for 50 Ω operation across 3300–3700 MHz. It uses depletion-mode GaN HEMTs requiring negative gate bias (VGSB = –4.1 Vdc, VGSA(Q) = –2.4 Vdc typical) and operates at 48 Vdc drain supply.

Its thermal design targets high-power reliability: RθJC (IR) = 2.8 °C/W measured at PD = 14.2 W, with maximum channel temperature limited to 225 °C. The device sustains 30.2 W avg. modulated output under 10 dB PAR AWGN stress with no degradation, confirming broadband ruggedness for real-world 5G signal conditions.

Key Specifications

Pinout & Package

Package: DFN 7 × 6.5 mm surface-mount package with thermally enhanced exposed paddle for low-impedance heat transfer. Designed for reflow soldering per AN1907 guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with A5G35H110NT4 (identical functionality, packaging-only variant) and AFGA35H110N (older generation), the A5G35H110N delivers 5.7% higher peak efficiency, validated 400 MHz ruggedness, and tighter gain flatness - directly enabling higher output power density and reduced cooling overhead in next-gen 5G active antennas.

Availability

A5G35H110N is available at Aetrix Electronics and suitable for 5G massive MIMO active antenna units, 3.5 GHz TDD macro base stations, and Open RAN remote radio heads requiring stable component supply, long-term lifecycle support, and traceable GaN sourcing.

Supply support for A5G35H110N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The Airfast RF Power product line delivers GaN-based amplifiers optimized for 4G/5G cellular infrastructure, emphasizing high efficiency, broadband operation, and ruggedness in thermally constrained active antenna systems.

FAQ

What is the guaranteed operating frequency range for the A5G35H110N?

The A5G35H110N is fully characterized and performance-guaranteed across 3300–3700 MHz. Operation outside this band is not validated, and NXP does not guarantee specifications such as gain, efficiency, or ACPR beyond these limits. Designers must constrain RF front-end filtering and LO planning to this 400 MHz window to ensure compliance with datasheet performance.

How is bias applied to the A5G35H110N in a Doherty configuration?

The A5G35H110N requires strict bias sequencing: first set both gates to –5 V, then apply 48 Vdc to both drains, then ramp VGSA to achieve IDQA = 70 mA, then set VGSB = –4.1 Vdc. During shutdown, reverse the sequence - remove RF, return gates to –5 V, discharge drains to 0 V, then disable gate supplies. This prevents gate overstress and ensures reliable GaN HEMT operation.

Does the A5G35H110N require external impedance matching networks?

No - the A5G35H110N is internally matched to 50 Ω at both RF input and output ports across 3300–3700 MHz. External matching is unnecessary for standard operation; however, designers must implement proper DC blocking, bias feed, and harmonic filtering per NXP reference circuit guidelines to maintain specified linearity and efficiency.

What thermal interface requirements apply to the A5G35H110N's DFN package?

The A5G35H110N uses a thermally enhanced DFN 7 × 6.5 mm package with an exposed paddle that must be soldered to a large, low-thermal-resistance PCB copper area connected to the system heatsink. Per AN1907, solder paste stencil design and reflow profile must ensure void-free thermal interface; RθJC = 2.8 °C/W assumes full paddle attachment and adequate heatsinking.

Is the A5G35H110N suitable for 5G NR FR1 deployments beyond 3.5 GHz?

No - the A5G35H110N is specifically designed and tested for 3300–3700 MHz operation. While it may function outside this band, NXP provides no performance guarantees for gain, efficiency, ACPR, or ruggedness at frequencies such as 2.6 GHz (n41) or 4.9 GHz (n79). For those bands, consult NXP's A5G26H110N or A5G49H110N variants.