NXP Semiconductors A5G35S008N-3400

Overview

A5G35S008N-3400 from NXP Semiconductors is a GaN-on-SiC RF power transistor designed for 5G massive MIMO active antenna systems in the 3300–3800 MHz band, delivering 27 dBm average output power at 48 Vdc drain supply, 24 mA quiescent current, and –41.0 dBc ACPR at 3400 MHz.

For engineers reviewing the A5G35S008N-3400 datasheet, A5G35S008N-3400 pinout, A5G35S008N-3400 application, or A5G35S008N-3400 equivalent, key selection criteria include its 20.9 dB power gain, 18.0% drain efficiency, DFN 4.5 × 4 mm package with exposed source, GaN depletion-mode biasing sequence, and ruggedness under 10 dB PAR AWGN modulation.

Technical Context

This device operates as a depletion-mode GaN HEMT requiring negative gate bias (VGS(Q) = –2.57 V typical) and strict turn-on/turn-off sequencing to prevent gate overstress. It integrates internal matching for broadband operation across 3400–3600 MHz, enabling simplified driver design in multi-carrier 5G NR base station PA stages.

Thermal management relies on direct die-to-case conduction via the exposed source pad (RθJC = 7.9 °C/W), with maximum channel temperature limited to 225 °C. Its wideband ruggedness supports 400 MHz instantaneous bandwidth at 55 Vdc and 7.4 W modulated output without degradation.

Key Specifications

Pinout & Package

DFN 4.5 × 4 mm plastic package with exposed backside source terminal; six-pin configuration with three no-connect (NC) pins and dedicated VDS, VGS terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with QPD1025 and AFGA35S008, the A5G35S008N-3400 provides broader 3300–3800 MHz coverage in the smallest footprint, making it optimal for space-constrained massive MIMO AAUs needing full n78 band support without sacrificing thermal performance or ruggedness.

Availability

A5G35S008N-3400 is available at Aetrix Electronics and suitable for 5G base station transceivers, massive MIMO active antenna units, and fixed wireless access customer premises equipment requiring stable component supply and long-term lifecycle assurance.

Supply support for A5G35S008N-3400 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The A5G35S008N-3400 belongs to NXP's Airfast RF Power portfolio, engineered specifically for energy-efficient, thermally robust, and broadband 5G infrastructure PAs operating in sub-6 GHz bands.

FAQ

What is the recommended gate bias voltage for A5G35S008N-3400 during normal operation?

The A5G35S008N-3400 requires a negative gate-source quiescent voltage of –2.57 V (typical), with a specified range of –2.81 V to –2.33 V at VDD = 48 Vdc and IDQ = 24 mA. This value is measured in functional test and reflects the precise bias needed to establish the 24 mA idle current. The A5G35S008N-3400 must be turned on using the defined sequence: first apply –5 V pinch-off voltage, then enable VDS, then adjust VGS to the final operating point.

Does A5G35S008N-3400 require external impedance matching components?

No, the A5G35S008N-3400 is an internally matched GaN transistor optimized for 3400–3600 MHz operation, eliminating the need for external matching networks in most 5G NR and W-CDMA reference designs. All typical performance data-including 20.9 dB gain and –41.0 dBc ACPR at 3400 MHz-is measured with the device mounted on the NXP reference circuit, confirming its broadband match integrity without added components.

What is the thermal resistance specification for A5G35S008N-3400, and how is it measured?

The A5G35S008N-3400 has a thermal resistance of RθJC = 7.9 °C/W, measured by infrared methodology from active die surface to case at TC = 124.2°C and PD = 2.5 W. This value is critical for heatsink sizing and junction temperature estimation. The A5G35S008N-3400 also specifies RθCHC (FEA) = 18.1 °C/W for reliability modeling, which must be used when calculating channel temperature limits up to 225 °C.

Can A5G35S008N-3400 operate at frequencies outside the 3300–3800 MHz range?

The A5G35S008N-3400 is characterized and guaranteed for operation from 3300 MHz to 3800 MHz, covering the full n78 5G band. Performance parameters-such as 20.9 dB gain and –41.0 dBc ACPR-are validated across this range, with measured values at 3300, 3400, 3500, 3600, 3700, and 3800 MHz. Operation outside this band is not supported by characterization data and may result in degraded gain, efficiency, or linearity.

What is the maximum drain supply voltage rating for A5G35S008N-3400?

The absolute maximum drain-source voltage (VDSS) for A5G35S008N-3400 is 125 Vdc, but the recommended operating condition is VDD = 48 Vdc. The device is qualified for transient operation up to 55 Vdc, and all functional test data-including Psat = 39.7 dBm and Gps = 18.6 dB-is obtained at 48 Vdc. Exceeding 55 Vdc risks permanent damage, even if below the 125 Vdc limiting value.