NXP Semiconductors A5G37H110NT4

Overview

A5G37H110NT4 from NXP Semiconductors is a 13.5 W asymmetrical Doherty RF power GaN amplifier optimized for 5G massive MIMO active antenna systems in cellular base stations. It delivers 15.4 dB power gain, 53.5% drain efficiency, and –31.8 dBc ACPR at 3700 MHz under 13.5 W average output with 9.9 dB PAR, operating across 3600–3800 MHz.

For engineers reviewing the A5G37H110NT4 datasheet, A5G37H110NT4 pinout, A5G37H110NT4 application, or A5G37H110NT4 equivalent, key selection criteria include guaranteed 3600–3800 MHz band performance, high VSWR ruggedness, thermal resistance of 2.7 °C/W (IR), and compatibility with low-complexity linearization schemes in compact DFN 7 × 6.5 mm packages.

Technical Context

This GaN HEMT-based Doherty amplifier integrates separate carrier and peaking transistors on a single die, enabling wide instantaneous bandwidth and high efficiency across the 3600–3800 MHz band. Its depletion-mode operation requires precise gate bias sequencing: VGSA/VGSB set to –5 V before applying VDD = 48 Vdc, then adjusting gate voltages to achieve IDQA = 70 mA (carrier) and target VGSB (peaking).

The device features internally matched 50 Ω input/output impedance, supports additive white Gaussian noise (AWGN) signals with 10 dB PAR, and maintains <0.030 dB/°C gain variation from –40°C to +85°C. Thermal design relies on RθJC (IR) = 2.7 °C/W measured at PD = 14.7 W and TC = 133°C, with maximum channel temperature limited to 225°C.

Key Specifications

Pinout & Package

Package: DFN 7 mm × 6.5 mm, thermally enhanced plastic package with exposed thermal pad on bottom surface. Compatible with standard reflow soldering per AN1907.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with A5G37H110NT4, the A5G37H110N variant offers identical RF and thermal performance but lacks tape-and-reel logistics for high-volume SMT, while AFGA37H110NT4 provides identical functionality with updated process controls and enhanced reliability metrics - both serve as field-proven alternatives without circuit redesign.

Availability

A5G37H110NT4 is available at Aetrix Electronics and suitable for 5G massive MIMO active antenna units, macro base station remote radio heads, and fixed wireless access infrastructure requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for A5G37H110NT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The Airfast RF Power product line delivers GaN-based amplifiers engineered specifically for 4G/LTE and 5G cellular infrastructure, emphasizing high efficiency, wide bandwidth, ruggedness, and ease of linearization in active antenna systems.

FAQ

What is the guaranteed frequency range for A5G37H110NT4?

The A5G37H110NT4 is characterized and performance-guaranteed exclusively for operation between 3600 MHz and 3800 MHz. NXP explicitly states there is no performance guarantee outside this band, and use beyond these frequencies may result in degraded gain, efficiency, or linearity not covered by specification.

Does A5G37H110NT4 require external matching components?

No, the A5G37H110NT4 is an internally matched GaN amplifier designed for 50 Ω systems. Its input and output ports are matched across the full 3600–3800 MHz band, eliminating the need for external matching networks in most reference designs - though system-level tuning may still be applied for optimal EVM or ACLR.

What is the recommended gate bias sequence for A5G37H110NT4?

The A5G37H110NT4 requires strict gate bias sequencing due to its depletion-mode GaN HEMT structure. To power on: (1) set VGSA and VGSB to –5 V, (2) apply VDD = 48 Vdc, (3) increase VGSA until IDQA = 70 mA, (4) adjust VGSB to target bias voltage. To power off: reverse the sequence, disabling RF first and ramping gates to –5 V before draining VDD.

Is A5G37H110NT4 suitable for outdoor base station deployment?

Yes, the A5G37H110NT4 supports case operating temperatures from –55°C to +150°C and has been validated for ruggedness under high VSWR and broadband AWGN stress. Its DFN 7 × 6.5 mm package with low RθJC = 2.7 °C/W enables reliable thermal management in sealed, fanless outdoor RRH enclosures.

What thermal interface guidelines apply to A5G37H110NT4?

The A5G37H110NT4 uses a thermally enhanced DFN package with an exposed copper thermal pad. Per AN1907, it requires controlled solder reflow with Type 3 or 4 solder paste, full thermal pad coverage, and ≥6 thermal vias (0.3 mm diameter, 0.5 mm pitch) connecting to an internal or backside ground plane to achieve the specified RθJC = 2.7 °C/W.