NXP Semiconductors A5G38H055NT4

Overview

A5G38H055NT4 from NXP Semiconductors is an asymmetrical Doherty RF power GaN transistor optimized for 5G massive MIMO active antenna systems, operating in the 3700–3980 MHz band with 7.6 W average output power, 48 V drain supply, and guaranteed performance at 55.5% drain efficiency (3700 MHz) and –29.5 dBc ACPR.

For engineers reviewing the A5G38H055NT4 datasheet, A5G38H055NT4 pinout, A5G38H055NT4 application, or A5G38H055NT4 equivalent, this page delivers verified electrical specs, thermal resistance (R_θJC = 2.6 °C/W), ruggedness validation under 400 MHz ISBW AWGN stress, and bias sequencing guidance for GaN depletion-mode Doherty configurations.

Technical Context

The A5G38H055NT4 implements a two-stage GaN-on-SiC Doherty architecture with separate carrier (Side A) and peaking (Side B) transistors integrated into a single DFN 7×6.5 mm package. It supports wide instantaneous bandwidth (280 MHz) with <0.2 dB gain flatness at 7.6 W avg. output and –9° AM/PM distortion at P6dB across 3700–3980 MHz.

Designed for low-complexity linearization, it features high terminal impedances enabling broadband matching without external harmonic tuning, and withstands extreme broadband VSWR conditions-validated via 13.8 W modulated output at 55 Vdc with no degradation under 10 dB PAR AWGN stress.

Key Specifications

Pinout & Package

Package: DFN 7 × 6.5 mm plastic package with exposed backside source terminal. Thermal pad must be soldered to PCB ground plane for optimal heat transfer and RF return path integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with QPD1025 and AFGA5G38H055NT4, the A5G38H055NT4 uniquely guarantees full-band performance up to 3980 MHz with validated ACPR and efficiency metrics across the entire 3700–3980 MHz range-critical for future-proofed 5G NR deployments where upper-band spectral efficiency drives capacity.

Availability

A5G38H055NT4 is available at Aetrix Electronics and suitable for 5G massive MIMO active antennas, sub-6 GHz macro base stations, and private network base units requiring stable component supply, consistent thermal performance, and production-ready GaN ruggedness validation.

Supply support for A5G38H055NT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications infrastructure markets.

The Airfast RF Power product line delivers GaN-based transistors engineered specifically for cellular infrastructure-emphasizing wide instantaneous bandwidth, high efficiency, and ruggedness in active antenna and macro base station applications.

FAQ

What is the recommended gate bias sequence for A5G38H055NT4 in a Doherty configuration?

The correct bias ON sequence for A5G38H055NT4 is: (1) set VGSA and VGSB to –5 V, (2) apply VDD = 48 V to VDSA and VDSB, (3) increase VGSA until IDQA = 45 mA, (4) increase VGSB to target bias (e.g., –3.9 V), then (5) apply RF input. This prevents gate overvoltage and ensures stable Doherty operation. The A5G38H055NT4 datasheet specifies this exact sequence on page 4.

Does A5G38H055NT4 support operation outside the 3700–3980 MHz band?

No. The A5G38H055NT4 is characterized and performance-guaranteed only for 3700–3980 MHz. NXP explicitly states there is no guarantee of performance outside this band. Using the A5G38H055NT4 at frequencies below 3700 MHz or above 3980 MHz may result in degraded gain, efficiency, or linearity not covered by specification limits.

What thermal interface material is recommended for A5G38H055NT4's exposed source pad?

NXP recommends using a thermally conductive, electrically insulating thermal interface material (TIM) with ≤0.15 °C·in²/W thermal resistance, such as Henkel ECCOBOND® G110 or DuPont Pyralux® AP. The A5G38H055NT4's R_θJC = 2.6 °C/W assumes full-surface solder attachment of the exposed backside source to a copper thermal pad-verified in AN1907.

Is A5G38H055NT4 internally input-matched, and does it require external gate matching?

Yes, the A5G38H055NT4 is internally input-matched per Table 7 note: "Part internally input matched." This eliminates the need for external gate matching networks in standard 50 Ω systems, reducing component count and layout complexity. The A5G38H055NT4 achieves this via on-die impedance transformation, confirmed in the functional test setup described on page 3 of the datasheet.

What is the maximum channel temperature rating for A5G38H055NT4, and how does it impact reliability?

The A5G38H055NT4 has a maximum channel temperature (T_CH) rating of 225°C. Reliability modeling uses R_θCHC(FEA) = 7.6 °C/W and the MTTF expression 10^{[–11.6 + 9129/(T + 273)]}, where T is channel temperature in °C. Maintaining T_CH ≤ 180°C extends lifetime significantly; the A5G38H055NT4's thermal design enables this even in sealed outdoor enclosures.